Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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CMP Properties of ITO Thin Film by CMP Process Parameters

공정변수 변화에 따른 ITO 박막의 연마특성

  • 최권우 (조선대학교 전기공학과) ;
  • 김남훈 (조선대학교 에너지자원신기술연구소) ;
  • 서용진 (대불대학교 전기공학과) ;
  • 이우선 (조선대학교 전기공학과)
  • Published : 2005.11.10
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Abstract

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process has been widely used in microelectronics and semiconductor processes. Indium tin oxide (ITO) thin film was polished by CMP by the change of process parameters for the improvement of CMP performance. Removal rate and planarity were improved after CMP process at the optimized process parameters compared to that before CMP process.

Keywords