• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.20-22
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• 1997

In ours study, we investigated the various properties in Te-light doped $Sb_{85}$G $e_{15}$ thin films such as the change of reflectance and transmittance according to phase change from amorphous to crystalline states In all films the transmittance was decreased, but the reflectance was increased by annealing. Particularly, the reflectance between as- deposited state and annealed state showed the largest change in the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film at 780nm, which was about 40% in as-deposited state and about 70% in annealed state. Therefore, it might be considered that the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film is recording medium showing to a good optical properties if it is used to optical recording of the phase change type. change type.ype.

• Journal of the Korean Society of Visualization
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• v.1 no.2
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• pp.52-57
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• 2003

The present paper investigated the effect of ultrasonic vibrations on the melting process of a phase-change material (PCM). The melting process in the square cavity with a heated vertical wall has been studied in terms of acoustic streaming. In the present study, applying with ultrasonic vibrations to the liquid were found to induce acoustic streaming which was clearly observed using by a particle image velocimetry (PIV) and a thermal infrared camera. The experimental results revealed that acoustic streaming could accelerate the melting process as much as 2.5 times, compared to the rate of natural melting (i. e., the melting without acoustic streaming). In addition, temperature and Nusselt numbers over time provided conclusive evidence of the important role of the acoustic streaming on the melting phenomena of the PCM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.107-109
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• 1989

Based on the ferroelectric microstructural residual stress model, the relation between grain size and residual elastic energy was proposed. It was found that the residual elastic energy increased with decreasing grain size by modeling and DSC results. This residual elastic energy change with grain size which induce the phase transituion mode change was the cause of a diffuse phase transition in small grain size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.86-90
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• 2017

This work reports the phase-change behavior and thermal stability of doped GeSbTe/GeSbTe bilayers. We prepared the bilayers using RF sputtering, and annealed them at annealing temperature ranging from $100^{\circ}C$ to $400^{\circ}C$. The sheet resistance of the bilayer decreased and saturated with increasing annealing temperature, and the saturated value was close to that of pure GeSbTe film. The surface of the bilayer roughened at $400^{\circ}C$, which corresponds to the surface roughening of doped GeSbTe film. Mixed phases of face-centered cubic and hexagonal close-packed crystalline structures were identified in the bilayers annealed at elevated temperature. These results indicate that the phase-change behavior of the bilayer depends on the concurrent phase-transitions of the two GeSbTe-based films. The dopants in the doped GeSbTe film were diffused out at annealing temperatures of $300^{\circ}C$ or higher, which implies that the thermal stability of the bilayer should be considered for its application in phase-change electronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.111-113
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• 1989

This paper reports the optical characteristics of TeS$_{5}$ Ge$_{5}$ thin film. In phase diagram, TeS$_{5}$ Ge$_{5}$ has the eutetic point with the loweat melting point. Therfore, TeS$_{5}$ Ge$_{5}$ thin film will be melted by Diode Laser with low energy. TeS$_{5}$ Ge$_{5}$ thin films start to change the phase from amorphous to crystalline near 10$0^{\circ}C$, but perfectly change the phase at 28$0^{\circ}C$. As-deposit TeS$_{5}$ Ge$_{5}$ thin film start to change the phase to crystalline in enviroment og 66$^{\circ}C$ 80%RH.circ}C$ 80%RH.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.69-69
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• 2009

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.6 no.3
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• pp.182-192
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• 1994

This paper focuses on the investigation of the heat transfer phenomena that occur inside the cylindrical tube. The inclination of the tube is adopted as a principal parameter varying from vertical to horizontal. The phase change material employed in this experiment is 99 percent pure n-docosane paraffin($C_{22}$ $H_{46}$). It is found that the amount of solidified mass during a prescribed solidifying period is not sensitive to the inclination of the tube but to the local layer thickness. It is studied that the latent energy is the largest contributor to the total extracted energy. The sensible energy($E_{s1}$, $E_{s2}$, $E_{s3}$) may not be negligible at the large wall-subcooling and initial-liquid-superheating, also at the first step of solidifying.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.384-384
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• 2012

PRAM switching device by using current pulse modulation was investigated to verify its possibility for 3D architecture. In this work, two phase change materials connected in series having a different crystallization temperature are used. Its structural for different phase change material was evaluated by electrical resistance. We confirmed that Germanium-Antimony-Tellurium (GST) alloy and Germanium- Copper-Tellurium (GCT) alloy material were selected according to crystallization temperature, ${\sim}180^{\circ}C$ for switching and ${\sim}240^{\circ}C$ for memory devices, respectively. From this research, it is expected that phase change switching device could have advantages of process in terms of material similarity and structural simplification.

• International Journal of High-Rise Buildings
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• v.6 no.2
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• pp.197-205
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• 2017

The conflict between indoor environmental quality and energy consumption has become an unneglectable problem for highrise office buildings, where occupants' productivity is highly affected by their working environment. An effective Façade, therefore, should play the role of an active building skin by adapting to the ever-changing external environment and internal requirements. This paper explores the energy-saving and indoor environment-improving potential of a phase-change material (PCM) integrated Façade. Building performance simulations, combined with parametric study and sensitivity analysis, are adopted in this research. The result quantifies the potential of a PCM-integrated Façade with different configurations and PCM properties, taking as an example a south-oriented typical office room in Shanghai. It is found that a melting temperature of around $22^{\circ}C$ for the PCM layer is optimal. Compared to a conventional Façade, a PCM-integrated Façade effectively reduces total energy use, peak heating/cooling load, and operative temperature fluctuation during the periods of May-July and November-December.

• Journal of the Korean Society of Safety
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• v.11 no.2
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• pp.33-41
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• 1996

Experiments were performed to study solidification of phase change material on a finned vertical tube when either conduction In the solid or natural convection in a liquid controls the heat transfer. The liquid was housed in a cylindrical containment vessel whose surface was maintained at a uniform, time-invariment temperature during a data run, and the solidification occurred at a finned and unfinned vertical tube positioned along the axis of the vassel. The phase change material(PCM) employed in this experiment is 99 percent pure n-Octacosan paraffin($C -{28}H_{58}/$). For conduction-controlled and convection-controlled solidification, the enhancement of the solidified mass rate due to finning is great when the solidified layer is thin and decreases as the layer grows thicker. It is studied that the latent energy($E_{\lambda}$) is the largest contributor to the total extracted energy($E_{\lambda} ＋ E_{sl}＋E_{s2}$) and the total extracted energy rate at a finned vertical tube is greater than that at a unfinned vertical tube.