Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Optical Characteristics og Te$_{85}Ge_{15}$ Alloy According to Phase Transition

Te$_{85}Ge_{15}$ alloy의 상변화에 따른 광학적 연구

  • 김병훈 (광운대학교 전자재료공학과) ;
  • 모연한 (광운대학교 전자재료공학과) ;
  • 이영종 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 김종빈 (조선대학교 전자공학과)
  • Published : 1989.06.01
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Abstract

This paper reports the optical characteristics of TeS$_{5}$ Ge$_{5}$ thin film. In phase diagram, TeS$_{5}$ Ge$_{5}$ has the eutetic point with the loweat melting point. Therfore, TeS$_{5}$ Ge$_{5}$ thin film will be melted by Diode Laser with low energy. TeS$_{5}$ Ge$_{5}$ thin films start to change the phase from amorphous to crystalline near 10$0^{\circ}C$, but perfectly change the phase at 28$0^{\circ}C$. As-deposit TeS$_{5}$ Ge$_{5}$ thin film start to change the phase to crystalline in enviroment og 66$^{\circ}C$ 80%RH.circ}C$ 80%RH.

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