• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.179-179
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• 2010

다양한 분야에서 확산 방지막은 소자의 신뢰성 향상에 중요한 역할을 하고 있다. 최근 반도체에 적용되기 시작한 구리 배선 형성 공정에서도 실리콘이나 실리콘 산화막으로 구리가 확산하는 것을 방지하는 기술이 중요한 부분을 차지하고 있다. 기존 physical vapor deposition (PVD)법을 이용한 $TaN_x$ 확산 방지막 형성 기술이 성공적으로 적용되고 있으나 반도체의 최소선폭이 지속적으로 감소함에 따라 한계에 다다르고 있다. 20 nm 급과 그 이하의 구리 배선을 위해서는 5 nm 이하의 매우 얇고 높은 피복 단차율을 가진 확산 방지막 형성 기술이 요구된다. 또한, 요구 두께의 감소에 따라 더 우수한 확산 방지 특성이 요구된다. Atomic layer deposition (ALD)은 박막의 정교한 두께 조절이 가능하며 높은 종횡비를 가지는 구조에서도 균일한 박막 형성이 가능하다. 이번 연구에서는 다른 질소 함량을 가진 $TaN_x$ 박막을 Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT) 전구체와 $H_2+N_2$ 반응성 플라즈마를 사용하여 plasma enhanced atomic layer deposition (PEALD) 법으로 형성하였다. 박막 내질소 함량에 따라 $TaN_x$의 상 (phase)과 미세구조 변화가 관찰되었고, 이러한 물성의 변화는 확산 방지 특성에 영향을 주었다. TEM (Transmission electron microscopy)과 SEM (scanning electron microscope), XPS (x-ray photoelectron spectroscopy)를 통해 $TaN_x$의 물성을 분석하였고, 300 도에서 700 도까지 열처리 후 XRD (x-ray deffraction)와 I-V test를 통해 확산 방지막의 열적 안정성이 평가되었다. PEALD를 통해 24 nm 크기의 trench 기판 위에 약 4 nm의 $TaN_x$ 확산 방지막이 매우 균일하게 형성할 수 있었으며 향후 구리 배선에 효과적으로 적용될 것으로 예상된다.

• Journal of Information Display
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• v.7 no.3
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• pp.27-30
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• 2006

This paper presents a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_{2}O_{3}$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_{2}O_{3}$ as both a top gate dielectric and a passivation layer was investigated. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric was changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_{2}O_{3}$ as a top gate dielectric was changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode was changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure was successfully investigated by an analysis of electrostatic potential.

• Korean Journal of Materials Research
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• v.15 no.9
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• pp.594-597
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• 2005

The barrier characteristics of ZrN films deposited by remote plasma enhanced atomic layer deposition(PEALD) using TDEAZ and $N_2$ remote plasma have been investigated under various deposition conditions such as temperatures, plasma power and processing pressures. ZrN films showed generally improved properties as the processing temperature, pressure and plasma power increased. The optimized processing temperature, plasma power and pressure were $300^{\circ}C$, 200 Watt and 1 torr. respectively ZrN films deposited at the optimized processing conditions showed the carbon contents and resistivity of $6at.\%$ and $400{\mu}{\Omega}cm$ respectively.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.98-102
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• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1249-1252
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• 2007

We have fabricated 3.5” transparent AM-OLED panel driven by PEALD grown ZnO TFT. The performance of ZnO thin film transistor was improved by adapting top gate structure, protection layer for ZnO from photolithography process, optimizing temperature and plasma power of ZnO growth process. The ZnO-TFT has a mobility of $8.9cm^2/V.s$, a subthreshold swing of 0.95V, and an on/off ratio of $10^7$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.111-114
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• 2003

Compared to a conventional atomic layer deposition (ALD) grown Al203 film, Plasma enhanced ALD (PEALD) grown AION film was revealed to possess a large breakdown field, which is necessary for stable operation of thin film electroluminescent (TFEL) device. Also, AION is more stable than Al203 films grown by PEALD or by ALD after post-annealing process, which is inevitably required to improve luminance property of phosphor. Furthermore, AION films were applied to insulators of ZnS:Tb TFEL device. Resultant1y, they show better stability than ALD grown insulators under high electric field.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.244-245
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• 2015

PEALD TiN 금속 전극을 갖는 MOS device에서 SC1 ($NH_4/H_2O_2/H_2O=1:2:5$), SPM ($H_2SO_4/H_2O_2=10:1$), $H_2O_2$ etch chemical을 이용해 TiN 식각 후 oxide 표면 잔류 Ti에 의한 전기적 특성 분석을 진행 하였다. Etch chemical 중 SPM을 이용한 소자의 전기적 특성이 우수하였는데, 이는 잔류Ti atom의 양이 다른 etch chemical을 사용한 것 대비 낮았기 때문이다. 이로 인하여 낮은 leakage current, less frequency dependence의 특성이 관찰되었다. 또한, 후속 열처리를 통해 더욱 우수한 특성이 관찰 되었다. 이러한 공정기술은 single 전극을 갖는 CMOS 형성 시 사용 될 수 있을 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.117-117
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• 2013

염료감응태양전지의 효율을 높이기 위해서, 광전극으로 쓰이는 다공성 $TiO_2$ 후막에 플라즈마원자증착기술(PEALD)과 원자증착기술(ALD)을 이용하여 알루미나($Al_2O_3$)막을 3차원적으로 균일하고 매우 얇게 형성하였다. 이를 통해서 태양빛에 의해 여기된 염료의 전자가 알루미나를 통과(tunneling)하여 $TiO_2$ 전도대로 도입되게 함과 동시에 $TiO_2$ 전도대로 도입된 전자들이 전해질과 염료로 재결합하는 현상을 방지하였다. 결국 이러한 작용에 의해서 염료감응태양전지의 개방전압을 높이는 효과를 관측하였다. 나아가 PEALD와 ALD 두가지 방식으로 형성된 $Al_2O_3$ 껍질층의 특성 차이를 비교 관찰하고 이에 따른 염료감응태양전지의 소자 특성에 미치는 영향을 고찰하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.52-52
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.