• Title/Summary/Keyword: P.E film

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Effect of Alachlor Herbicide and Transparent Polyethylene Film Mulching on Growth and Yield of Peanuts (Alachlor와 P.E. 피복(被覆)이 땅콩의 생육(生育)과 수량(收量)에 미치는 영향(影響))

  • Lee, S.S.;Kang, K.H.;Back, J.H.;Lee, K.H.;Jung, S.H.;Choi, D.W.
    • Korean Journal of Weed Science
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    • v.4 no.1
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    • pp.79-87
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    • 1984
  • Herbicidal effects of alachlor to peanuts were observed under different formulations (granule containing 5.0% a.i. and emulsifiable concentrate containing 43.7% a.i.) and levels (granule with 3 and 6kg/l0a and emulsion with 300㏄/l0a) with the transparent polyethylene (P.E.) film mulching. Formulations and levels of alachlor did not affect emergence ratio, time of emergence and flowering, and early growth of peanuts such as the number of leaves and branches, length of branches; and shoot dry weight at 20 and 40 days after planting, but early growth was enhanced by P.E. film mulching. At harvest, weed dry weight was positively correlated with length of branches, but negatively correlated with the number of branches and shoot dry weight. Acalyphu australis and Chenopodium album were not effectively controlled by the application of alachlor and growth of C. album was retarded under P.E. film mulching. Portulaca oleracea and Digitaria sanguinalis were effectively controlled by alachlor, but they were not affected by P.E. film mulching. At harvest, D. sanguinalis, A. australis, and Echinochloa crus galli were predominant weeds in all treatments; persistence of alachlor may not be long enough to control even sensitive weeds to alachlor such as D, sanguinalis in the field of peanuts of which canopy development was relatively slow. Weed dry weight at harvest was negatively correlated with the number of pods and grain yield of peanuts. Among the yield components only the number of nods per plant was positively correlated with grain yield. Hana weeding after July 1 increased grain yield of Peanuts even in alchlor applied plots.

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Available Phosphours Phosphorus and Electrical Conductivity of the Saturated Extracts of Soils from the Plastic Film Houses (포화침출액법에 의한 시설하우스 토양의 유효인산과 전기전도도)

  • Jung, Yeong-Sang;Cho, Su-Hyun;Yang, Jae E.;Kim, Jeong-Je;Um, Hyung-Sik
    • Korean Journal of Soil Science and Fertilizer
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    • v.33 no.1
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    • pp.1-7
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    • 2000
  • Management of phosphorus availability in the plastic film house soils in Korea merits attention because salts have been accumulated for last decades due to the heavy application of fertilizers and intensive cropping practices. In an attempt to characterize the P availability, available phosphorus contents and electrical conductivity of the saturated extracts ($EC_e$) were measured for soils collected from the 169 plastic film houses in Kangwon-do. Soil phosphorus contents were analyzed by methods of Lancaster, Bray No. 1, Olsen, Truog, water extractable and saturation extracts. Phosphorus concentrations in the saturated extracts of the plastic film house soils ranged from 0.02 to $34mg\;L^{-1}$, with the average of $8mg\;L^{-1}$. The available $P_2O_5$ of the soils ranged from 136 to $3,689mg\;Kg^{-1}$, with the average of $1,261mg\;Kg^{-1}$. The water soluble $P_2O_5$ ranged from 2 to $118mg\;L^{-1}$, with the average of $39mg\;L^{-1}$. A significant correlation existed between saturation extract P (Y) and available $P_2O_5$ (X) [Y = -5.075 + 0.018X, $r=0.662^{***}$] indicating $1.0mg\;P\;L^{-1}$ of in the saturated extract was equivalent to $337mg\;Kg^{-1}$ of the available $P_2O_5$ by Lancaster method. Electrical conductivity of the saturated pastes ($EC_e$) was highly significantly correlated with EC (1:5), yielding the slope of 12.2 for the coarse textured plastic film house soils. Results of higher concentrations of available P in soil solution and dilution factor of 12.2 for $EC_e$ demonstrate that a special care must be taken in terms of fertilizer management and data interpretation for soils under this specific condition.

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Epitaxial growth of yttrium-stabilized HfO$_2$ high-k gate dielectric thin films on Si

  • Dai, J.Y.;Lee, P.F.;Wong, K.H.;Chan, H.L.W.;Choy, C.L.
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.63.2-64
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    • 2003
  • Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

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Preparation of p-type transparent conducting $CuGaO_2$ thin film by DC/RF sputtering (DC-RF 스퍼터링에 의한 p형 투명 전도성 $CuGaO_2$ 박막의 제조)

  • Park, Hyun-Jun;Kwak, Chang-Gon;Kim, Sei-Ki;Ji, Mi-Jung;Lee, Mi-Jae;Choi, Byung-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.48-48
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    • 2007
  • P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

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Effect of pretreatment and packaging methods on quality of cold vacuum dried peach (전처리 및 포장방법이 냉풍감압건조 복숭아의 품질에 미치는 영향)

  • Kwon, Gi-Man;Kim, Jae-Won;Youn, Kwang-Sup
    • Food Science and Preservation
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    • v.20 no.3
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    • pp.317-322
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    • 2013
  • This study was conducted to investigate the effects of pretreatment and different packaging methods on the physicochemical properties of cold vacuum-dried peaches. All the dried peach samples were stored such as $N_2$ gas substitution, vacuum and passive packaged with polyethylene (PE) film and oriented polypropylene (OPP)/aluminum (Al)/PE film at $40^{\circ}C$ for 50 days. The weight change, pH, soluble solids content, titratable acidity, soluble solid-acid ratio (SS/TA), delta E, browning degree and phenolic compounds were analyzed. The weight change and pH were lower in the 0.1% vitamin C-treated group and were significantly lowest in the vacuum-treated OPP/AL/PE. The soluble solids content and the SS/TA were higher in the non-treated groups than in the vitamin C-treated groups. According to the packaging methods, the $L^*$ values were higher in the vacuum, $N_2$ gas and passive package, in that order. In addition, the browning degree and the delta E value were lower in the pretreated groups and significantly lowest in the vacuum-treated OPP/AL/PE with 0.1% vitamin C group. The phenolic compounds were high for the pretreated groups, according to the packaging methods (vacuum > $N_2$ gas> passive), and the OPP/AL/PE was significantly higher than the PE. These results suggest that different packaging materials and pretreatment methods affected the quality of the dried peaches, and the vacuum-OPP/AL/PE film packaging group showed a high quality.

Preparation of p-type transparent semiconductor $SrCu_2O_2$ thin film by RF magnetron sputtering (RF 마그네트론 스퍼터링에 의한 p형 투명 반도체 $SrCu_2O_2$ 박막의 제조)

  • Kim, Sei-Ki;Seok, Hye-Won;Lee, Mi-Jae;Choi, Byung-Hyun;Jeong, Won-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.47-47
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    • 2008
  • P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

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The Structural and electrical Properties of $BaTiO_3$ Thin Films Deposited on Si/MgO Substrates (Si/MgO 기판에 증착된 BaTiO$_3$ 박막의 구조 및 전기적 특성)

  • 홍경진;김태성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1108-1114
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    • 1998
  • $BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

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Antimicrobial Edible Film Developed from Defatted Corn Germ Meal Fermented by Bacillus subtilis

  • Kim Hyung-Wook;Roh I-Woo;Kim Kyung-Mi;Jang In-Suk;Ha Sang-Do;Song Kyung-Bin;Park Sang-Kyu;Lee Won-Young;Youn Kwang-Sup;Bae Dong-Ho
    • Journal of Microbiology and Biotechnology
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    • v.16 no.4
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    • pp.597-604
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    • 2006
  • In order to extend the shelf-life of packaged or coated foods, an antibacterial edible film containing 1.8% of BLS was developed from the defatted corn germ meal, which had been fermented with Bacillus subtilis under the optimum condition of pH 7.0-7.5 and $33^{\circ}C$ for 33 h. Water vapor permeability of the fermented film $(88.3mg/cm^2\;h)$ was higher than those of the normal corn germ films $(75.8mg/cm^2\;h)$. Protein solubility of the fermented film was also higher than ordinary corn germ film at the pH range of 3-10. The fermented corn germ film had higher tensile strength and lower % elongation (elongation rate) than the ordinary corn germ film. The antimicrobial activity of the film was more than 50% of the maximum activity after film production with heat treatment at $90^{\circ}C$ and pH adjustment to 9. When the corn germ protein film with bacteriocin-like substance was applied on the mashed sausage media containing E. coli, the bacterial growth inhibition was higher than the ordinary corn protein film.

COMPARATIVE STUDY OF DIRECT DIGITAL RADIOGRAPHIC SYSTEM WITH FILM-BASED DIGITAL IMAGING SYSTEM USING EKTASPEED AND EKTASPEED PLUS FILM (직접 디지탈 방사선 촬영시스템과 Ektaspeed 및 Ektaspeed Plus 필름을 이용한 방사선 사진용 디지탈 영상시스템과의 비교 연구)

  • Do Jung-Joo;Kim Eun-Kyung
    • Journal of Korean Academy of Oral and Maxillofacial Radiology
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    • v.25 no.1
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    • pp.51-70
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    • 1995
  • The purpose of this investigation was to compare the direct digital radiographic system with film-based digital imaging system using Ektaspeed and Ektaspeed Plus film with respect to image characteristics and detectability and evaluate the sensor noise with the use of subtraction method. Direct digital radiographic system which used was Sens-A-Ray system(Regam Medical Systems, Sundsvall, Sweden) and film-based digital imaging system was composed of Macintosh II ci computer, high resolution Sony XC-77 CCD camera and intraoral x-ray film(Kodak Ektaspeed film, Kodak Ektaspeed Plus film). Images were taken by using CCD sensor of Sens-A-Ray system, Ektaspeed film and Ektaspeed Plus film with variable exposure time(0.06s, 0.1s, 0.16s, 0.2s, 0.3s, 0.4s, 0.5s, 0.6s, O.8s, LOs), 5 times at each exposure time. And then ektaspeed films and ektaspeed plus films were digitized using CCD camera. Image groups were divided into 3 groups; Sens-A-Ray group(direct digital radiographic system), Ektaspeed group and Ektaspeed Plus group (film-based digital imaging system) They were assessed by the following three aspects; image density, image contrast and detectability and sensor noise of Sens-A-Ray system was also evaluated. The results were as follow : 1. S group showed higher density than E , EP group except at the low exposure time(p<0.01). 2. S group showed higher contrast than E,EP group except at the high exposure time(p<0.01). 3. All groups showed good detectability at the each proper exposure time. Lowest exposure time which shows maximum detectability in S,EP group(0.5s) was lower than that in E group(0.6s). 4. Sensor noise of Sens-A-Ray system generally increased according to exposure time. On the basis of the above results, it was considered that Sens-A-Ray system could show higher speed, higher contrast than Ektaspeed, Ektaspeed Plus film except at too high and low exposure time and the same detectability as the conventional intraoral film.

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Post-annealing Effect of NiO Thin Film Grown by RF Sputtering System on 4H-SiC Substrate (4H-SiC 기판 위에 RF Sputter로 증착된 NiO 박막의 후열처리 효과)

  • Soo-Young Moon;Min-Yeong Kim;Dong-Wook Byun;Geon-Hee Lee;Sang-Mo Koo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.2
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    • pp.170-174
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    • 2023
  • Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.