Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation of p-type transparent conducting $CuGaO_2$ thin film by DC/RF sputtering

DC-RF 스퍼터링에 의한 p형 투명 전도성 $CuGaO_2$ 박막의 제조

  • Park, Hyun-Jun (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Kwak, Chang-Gon (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Kim, Sei-Ki (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Ji, Mi-Jung (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Lee, Mi-Jae (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Choi, Byung-Hyun (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.)
  • Published : 2007.06.21
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Abstract

P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

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