• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.257-262
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• 2003

The structure and optical properties of n-type and p-type porous silicon (PS) prepared by the chemical etching in the light and the dark, respectively, are reported in this paper. Microstructural features of the samples are mainly investigated by SEM, AFM XRDGI techniques. Also, their optical properties are investigated by photoluminescence (PL) and Fourier transform infrared absorption measurements. In the n-type PS, the room temperature photoluminescence is observed in a visible range from 500 nm to 650 nm in contrast to that in the blue region (400∼650 nm) in p-type PS. Further, semi-transparent Cu films in thickness range of ∼40 nm are deposited by rf-magnetron sputtering on PS to investigate the I-V characteristics of the samples.

• Journal of Microbiology
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• v.37 no.3
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• pp.128-135
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• 1999

Among oil-degrading microorganisms isolated from oil-polluted industrial areas, one yeast strain showed high degradation activity of aliphatic hydrocarbons. From the analyses of 18S rRNA sequences, fatty acid, coenzyme Q system, G+C content of DNA, and biochemical characteristics, the strain was identified as Yarrowia lipolytica 180. Y. lipolytica 180 degraded 94% of aliphatic hydrocarbons in minimal salts medium containing 0.2% (v/v) of Arabian light crude oil within 3 days at 25$^{\circ}C$. Optimal growth conditions for temperature, pH, NaCl concentration, and crude oil concentration were 30$^{\circ}C$, pH 5-7, 1%, and 2% (v/v), respectively. Y. lipolytica 180 reduced surface tension when cultured on hydrocarbon substrates (1%, v/v), and the measured values of the surface tension were in the range of 51 to 57 dynes/cm. Both the cell free culture broth and cell debris of Y. lipolytica 180 were capable of emulsifying 2% (v/v) crude oil by itself. They were also capable of degrading crude oil (2%). The strain showed a cell surface hydrophobicity higher than 90%, which did not require hydrocarbon substrates for its induction. These results suggest that Y. lipolytica has high oil-degrading activity through its high emulsifying activity and cell hydrophobicity, and further indicate that the cell surface is responsible for the metabolism of aliphatic hydrocarbons.

• Korean Journal of Environmental Agriculture
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• v.23 no.1
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• pp.68-74
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• 2004

Miscanthus purpurascens Juice containing potassium (37,952 mg/L), nitrogen (14,000 mg/L), phosphorus (6,800 mg/L), magnesium (5,969 mg/L), calcium (5,910 mg/L), etc., was investigated to develop a novel meidum far the mass cultivation of useful microorganisms. For this research, we first isolated an antagonistic bacterium G-74 from soil, which showed strong growth inhibition against two phytopathogenic fungi, Rhizoctonia solani and Botrytis cinerea, and identified as Bacillus lentimorbus G-74 based on the morphological characteristics and MIDI analysis. Culture conditions for G-74 strain in the M. purpurascens juice medium were optimized. Dilution rate of the medium, temperature and initial pH for the optimum growth of G-74 strain were 30% (V/V), $35^{\circ}C$ and 5.0, respectively. It was found that additions of 2.0% (W/V) corn starch as a carbon source and 1.0% (W/V) yeast extract as a nitrogen source in this medium increased B. lentimorbus G-74 growth to 66% more efficient than Luria Bertani medium.

• Microbiology and Biotechnology Letters
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• v.27 no.6
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• pp.466-470
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• 1999

Protease production and its characteristics were investigated with Mucor racemosus f. racemosus PDA 103 which was isolated from Korean traditional meju. Optimum culture conditions of the strain for the production of the protease in basic medium[bean(Baektae):H2O=1:1(w/v)] were as follows: pH 6, 3$0^{\circ}C$ and 72hrs. Optimum pH and temperature for the enzyme activity of the protease produced by Mucor racemosus f. racemosus were pH 5 and 5$0^{\circ}C$, respectively. The enzyme was relatively stable a pH2.0~5.0 and at temperature below 4$0^{\circ}C$. Phenylmethane-sulfonyl fluoride and Ag+ inhibited the enzyme activity. This indicates that the enzyme is serine protease. Km value was 0.9$\times$10-4M and Vmax value was 5.93$\mu\textrm{g}$/min. This enzyme hydrolyzed casein more rapidly than bovine albumin.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.88-93
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• 1998

For the self-aligned AlGaAs/GaAs HBTs, the surface states at the interface between the extrinsic base surface and the passivation nitride is a major cause of degradation of dc characteristics. In this paper the degradation mechanisms of self-aligned AlGaAs/GaAs HBT were analyzed, and GaAs HBTs, which employed an InGaP ledge emitter structure formed by the nonself-aligned process to cover the surface of the extrinsic base and reduce the surface states, produced high reliability. Accoridng to the acceleration lifetime test, the nonself-aligned InGaP/GaAs HBTs produced very reliable dc characteristics comparing with the self-aligned AlGaAs/GaAs HBTs. The activation energy was 1.97eV and MTTF $4.8{\times}10^{8}$ hrs at $140^{\circ}C$ which satisfied the MIL standard.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.2
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• pp.238-244
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• 2010

In this paper, we studied electrical characteristics of internal converter type of LED lamps for road and street lighting. We surveyed electro-technical regulations and KS(Korean industrial standards) about LED luminairs. Waveforms of voltage and current, thermal distributions, insulation resistances between live parts and exposed conductive parts, and flame test of cover of LED lamps were experimented and analyzed. In regulations, insulation resistance between live conductors and exposed conductive parts should be greater than $0.2M{\Omega}$ in case nominal voltage of wiring is 220V. In KS codes, the value of insulation resistance should be greater than $2M{\Omega}$ while applying DC 500V or DC 100V. In the result of this study, waveforms of primary voltage and current were distorted. There was difference in waveforms of secondary voltage and current according to composition of converter. Mostly, insulation resistances were measured high more than regulation and code value but some measured points were measured badly($0.0M{\Omega}$). Cover of LED lamps was ignited easily. We expect that the results of this study would be helpful for revision of regulations and national codes for the electrical safety of LED road and street lighting.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.116-119
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• 1994

The characteristics of the Si-SiO$_2$ interface and the degradation in the short channel(L${\times}$W=1.7$\mu\textrm{m}$${\times}$15$\mu\textrm{m}$) SONOSFET nonvolatile memory devices, fabricated on the basis of the existing n-well CMOS processing technology for 1 Mbit DRAM with the 1.2$\mu\textrm{m}$ m design rule, were investigated using the charge pumping method. The SONOSFET memories have the tripple insulated-gate consisting of 30${\AA}$ tunneling oxide 205${\AA}$ nitride and 65${\AA}$ blocking oxide, The acceleration method which square voltage pulses of t$\_$p/=10msec, Vw=+19V and V$\_$E/=-22V continue to be alternatly applied to gale, was used to investigate the degradation of SONOSFET memories with the write/erase cycle. The degradation characteristics were ascertained by observing the change in the energy and spatial distributions of the interface trap density.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Journal of IKEEE
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• v.22 no.4
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• pp.916-921
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• 2018

In this paper, we analyzed the power MOSFET devices for high voltage and high current operation. 4H-SiC was used instead of Si to improve the static characteristics of the device. Since 4H-SiC has a high critical electric field due to wide band gap, 4H-SiC is more advantageous than Si in high voltage and high current operation. In the conventional VDMOSFET structure using 4H-SiC, the breakdown voltage is limited due to the electric field crowding at the edge of the p-base region. Therefore, in this paper, we propose a Curvature VDMOSFET structure that improves the breakdown voltage and the static characteristics by reducing the electric field crowding by giving curvature to the edge of the p-base region. The static characteristics of conventional VDMOSFET and curvature VDMOSFET are compared and analyzed through TCAD simulation. The Curvature VDMOSFET has a breakdown voltage of 68.6% higher than that of the conventional structure without increasing on-resistance.

• Korean Journal of Plant Resources
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• v.23 no.4
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• pp.374-378
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• 2010

Determining plant moisture characteristics is an essential study not only for cultivation, but also for ex-situ conservation. In this study, employing pressure-volume curve we examined moisture characteristics of Rhododendron micranthum, known as rare plant, with the aim of its ex-situ conservation. Several individuals growing in Mt. Worak, Youngwol-gun Yeonha-ri and Bongwa-gun Seokpo-ri were selected for this study, from which we collected leaves. The original bulk osmotic pressure at maximum turgor(${{\Psi}_o}^{sat}$)was -1.5 MPa in those of Mt. Worak and Seokpo-ri, which is somewhat lower than that of Yeonha-ri(-1.2 MPa). It appeared that the osmotic pressure at incipient plasmolysis(${{\Psi}_o}^{tlp}$) of leaves collected in both Mt. Worak and Seokpo-ri were -1.29 MPa, and -1.26 MPa, respectively, which are lower than that of Yeonha-ri(-1.02MPa). Maximum bulk modulus of elasticity($E_{max}$) was 14.0 MPa, 8.67 MPa in leaves collected from both Seokpo-ri and Mt. Worak, respectively, those value of which were approximately 3 times higher than that of Yeonha-ri(4.00 MPa). The values of $RWC_{tlp}$(Relative water content at incipient plasmolysis) of leaves collected in three areas, were roughly 83%, suggesting that Rhododendron micranthum has relatively high capability of containing water. Our finding on moisture characteristics of Rhododendron micranthum is similar to those of other Rhododendron spp. We suggest that individuals growing in both Worak and Seokpo-ri, are preferable to those in Yeonha-ri for ex-situ transplantation since those individuals are found to have better drought resistance.