As device dimensions approach submicrometer size in ULSI, the demand for interlayer dielectric materials with very low dielectric constant is increased to solve problems of RC delay caused by increase in parasitic resistance and capacitance in multilevel interconnectins. Fluorinated amorphous carbon in one of the promising materials in ULSI for the interlayer dielectric films with low dielectric constant. However, poor thermal stability and adhesion with Si substrates have inhibited its use. Recently, amorphous hydrogenated carbon (a-C:H) film as a buffer layer between the Si substrate and a-C:F has been introduced because it improves the adhesion with Si substrate. In this study, therfore, a-C:F/a-C:H films were deposited on p-type Si(100) by ECRCVD from $C_2F_6, CH_4$and $H_2$gas source and investigated the effect of forward power and composition on the thickness, chemical bonding state, dielectric constant, surface morphology and roughness of a-C:F films as an interlayer dielectric for ULSI. SEM, FT-IR, XPS, C-V meter and AFM were used for determination of each properties. The dielectric constant in the a-C:F/a-C:H films were found to decrease with increasing fluorine content. However, the dielectric constant increased after furnace annealing in $N_2$atomosphere at $400^{\circ}C$ for 1hour due to decreasing of flurorine content. However, the dielectric constant increased after furnace annealing in $N_2$atmosphere at $400^{\circ}C$ for 1hour due to decreasing of fluorine concentration.
Statement of problem : Although zirconium oxide ceramics are more and more commonly used in restorative dentistry, for many clinical applications only limited data can be found in the literature. However it is quite clear that hydrofluoric acid etching is impossible with zirconia ceramics. Therefore, other bonding techniques are required in order to lute these materials adhesively. Purpose : The purpose or this study was to evaluate the effects of surface treatments on shear bond strengths between two resin cements and a zirconia ceramic. Materials and methods : Experimental industrially manufactured yttrium-oxide-partially-stabilized zirconia ceramic discs (Adens, Korea) were used for this study. The ceramic specimens divided into five experimental groups and a control group (as received). Five surface treatments were studied 1) sandblasting with 110$\mu$m $Al_2O_3$ at 3 bars pressure 13 seconds at a distance of 10 mm, 2) flame-treated with the Silano-Pen for 5 $s/cm^3$, 3) grinding with a diamond bur. 4) sandblasting + Silano-Pen treatment, 5) diamond bur preparation + Silano-Pen treatment. Acrylic plastic tube (5 mm in height and 3 mm in diameter) were filled with composite to fabricate composite cylinders The composite cylinders were bonded to the ceramic specimens with either Superbond C&B or Panavia F resin luting agents. All cemented specimens were tested under shear loading until fracture on universal testing machine at a crosshead speed 1mm/min; the maximum load at fracture was recorded. Sheat bond strength data were analyzed with oneway analysis of variance and Tukey HSD tests (P<.05). Treated ceramic surfaces and fracture surfaces after shear testing were examined morphologically using scanning electron microscope. Results: Ceramic surface treatment with Silano-Pen after sandblasting improved the bond strength of Superbond C&B resin cement. Supevbond C& B resin cement at Silano-Pen aiker sandblasting($27.4{\pm}3.8MPa$) showed statistically higher shear bond strength than the others. Conclusion: Within the limitation of this study, Superbond C& &B resin cement are suitable for cementation of zirconia ceramics and flame-treated with the Silano-Pen after sandblasting is required to enhance the bond strength.
Park Hyung-Yoon;Cho Lee-Ra;Cho Kyung-Mo;Park Chan-Jin
The Journal of Korean Academy of Prosthodontics
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v.42
no.6
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pp.654-663
/
2004
Statement of problem. According to the fracture pattern in several reports, fractures most frequently occur in the interface between the ceromer and the substructure. Purpose. The aim of this in vitro study was to compare the macro shear bond strength and microshear bond strength of a ceromer bonded to a fiber reinforced composite (FRC) as well as metal alloys. Material and methods. Ten of the following substructures, type II gold alloy, Co-Cr alloy, Ni-Cr alloy, and FRC (Vectris) substructures with a 12 mm in diameter, were imbedded in acrylic resin and ground with 400, and 1, 000-grit sandpaper. The metal primer and wetting agent were applied to the sandblasted bonding area of the metal specimens and the FRC specimens, respectively. The ceromer was placed onto a 6 mm diameter and 3 mm height mold in the macro-shear test and 1 mm diameter and 2 mm height mold in the micro-shear test, and then polymerized. The macro- and micro-shear bond strength were measured using a universal testing machine and a micro-shear tester, respectively. The macro- and micro-shear strength were analyzed with ANOVA and a post-hoc Scheffe adjustment ($\alpha$ = .05). The fracture surfaces of the crowns were then examined by scanning electron microscopy to determine the mode of failure. Chi-square test was used to identify the differences in the failure mode. Results. The macro-shear strength and the micro-shear strength differed significantly with the types of substructure (P<.001). Although the ceromer/FRC group showed the highest macroand micro-shear strength, the micro-shear strength was not significantly different from that of the base metal alloy groups. The base metal alloy substructure groups showed the lowest mean macro-shear strength. However, the gold alloy substructure group exhibited the least micro-shear strength. The micro-shear strength was higher than the macro-shear strength excluding the gold alloy substructure group. Adhesive failure was most frequent type of fracture in the ceromer specimens bonded to the gold alloys. Cohesive failure at the ceromer layer was more common in the base metals and FRC substructures. Conclusion. The Vectris substructure had higher shear strength than the other substructures. Although the shear strength of the ceromer bonded to the base metals was lower than that of the gold alloy, the micro-shear strength of the base metals were superior to that of the gold alloy.
Proceedings of the Korean Vacuum Society Conference
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1998.02a
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pp.120-120
/
1998
Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.
Proceedings of the Korean Vacuum Society Conference
/
2012.02a
/
pp.431-432
/
2012
In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.
Kim, Bo-Hyoun;Kim, Dae-Gon;Park, Chan-Jin;Cho, Lee-Ra
Journal of Dental Rehabilitation and Applied Science
/
v.25
no.1
/
pp.41-52
/
2009
The surface treatment of titanium implant could bring out the biochemical bonding between bone and implant. The purpose of this study was to evaluate the biomechanical bone response of Mg-ion implanted implants with plasma source ion implantation method. Twelve New Zealand white rabbits were included in this study. Each rabbit received one control fixture (blasted with resorbable blasting media, RBM) and three types of Mg ion implanted fixtures in tibiae. The implants were left in place for 6 weeks before the rabbits were sacrificed. Removal torque value and resonance frequency analysis (ISQ) were compared. The repeated measured analysis of variance was used with $P{\leq}0.05$ as level of statistical significance. ISQ was not different among all groups. However, the ISQ was increased after 6 weeks healing. The group had lowest ISQ value showed the greatest increment. Mg-1 implants with 9.4% retained ion dose showed significantly higher removal torque value than that of the other implants. From this results, it is concluded that the Mg-1 implants has stronger bone response than control RBM surface implant.
manganese oxides have been prepared by Chimie Douce redox reaction between permanganate and chalcogen element fine powder under acidic condition (pH = 1). According to powder X-ray diffraction analyses, the S- and Se-doped manganese oxides are crystallized with layered birnessite and tunnel-type -MnO2 structures, respectively. On the contrary, Te-doped compound was found to be X-ray amorphous. According to EDS analyses, these compounds contain chalcogen dopants with the ratio of chalcogen/manganese = 4-7%. We have investigated the chemical bonding character of these materials with X-ray absorption spectroscopic (XAS) analysis. Mn K-edge XAS results clearly demonstrated that the manganese ions are stabilized in octahedral symmetry with the mixed oxidation states of +3/+4. On the other hand, according to Se K- and Te L1-edge XAS results, selenium and tellurium elements have the high oxidation states of +6, which is surely due to the oxidation of neutral chalcogen element by the strong oxidant permanganate ion. Taking into account their crystal structures and Mn oxidation states, the obtained manganese oxides are expected to be applicable as electrode materials for lithium secondary batteries.
Park, Mi Young;Kim, Young Joong;Cho, Ook Jae;Lee, Ik Mo
Journal of the Korean Chemical Society
/
v.40
no.6
/
pp.445-452
/
1996
Catalytic hydrogenation of ketones and aldehydes by RuH(NO)$L_3$ ($L_3$: $PPh_3$, PhP($CH_2CH_2PPh_2$)$_2$(etp)) was investigated to examine the reaction mechanism and the competence of hydridonitrosyl complexes as catalysts for organic synthesis. RuH(NO)$L_3$ showed catalytic activity for the hydrogenation and the activities of catalysts were dependent on the steric and electronic factors. The less the steric demands of the substrates become, the more activity the catalysts show. For the electronic effect, the more the partial positive charge on the carbonyl carbon atom in ketones becomes and the more the double bond character of carbonyl group in aldehydes becomes, the more active the catalysts are. These results reflect the difference of reaction mechanisms of two substrates, ketones and aldehydes. Catalytic activities of RuH(NO)(etp) and RuH(NO)($PPh_3$)$_3$ in the presence of extra $PPh_3$ toward hydrogenation showed the existence of a reaction pathway accompanied with the change of the bonding modes of NO ligand. The roles of excess $PPh_3$ change with increase of the mole ratio of $PPh_3$ to catalysts; prevention of ligand dissociation from comlexes → bases → ligands. The activity of RuH(NO)(etp) was lower than that of RuH(NO)($PPh_3$)$_3$ toward the hydrogenation of the same substrates mainly due to the structural difference. These catalysts showed the selectivity toward olefin hydrogenation over carbonyl groups in the competitive reaction.
Two different QSAR methods, the comparative molecular similarity indices analyses (CoMSIA) and hologram quantitative structure activity relationship (HQSAR) are studied for the fungicidal activities ($pI_{50}$) of 2-N-benzyl-5-phenoxy-3-isothiazolone derivatives against sensitive (SPC: 95CC7105) and resisitive (RPC: 95CC7303) phytophthora blight fungus (Phytaphthora capsici). According to the findings from these QSAR investigation, the cross-validation value, $q^2$ and Pearson correlation coefficient, $r^2$ in the two methods were CoMSIA: RPC; $q^2=0.675,\;r^2=0.942$, SPC; $q^2=0.350,\;r^2=0.876$ and HQSAR: RPC; $q^2=0.519,\;r^2=0.869$, SPC; $q^2=0.483,\;r^2=0.990$, respectively. Therefore, the two models of comparative statistical significance were obtained. From the CoMSIA contour maps, the important factors for selective fungicidal activity against RPC are to be expected that the lower hydrophobic and not bulkiness substituent as hydrogen bonding acceptor have to introduce to meta and para-position (C1-C6) on the phenoxy moiety. And the results of prediction suggest that HQSAR method showed higher fungicidal activity than CoMSIA method.
The purpose of this study was to compare the tensile bond strength of several self-adhesive resin cements bonded to dentin surfaces with different wet conditions. Three self-adhesive resin cements: Rely-X Unicem (3M ESPE, St. Paul, MN. USA). Embrace Wetbond (Pulpdent. Oakland. MA. USA). Maxcem (Kerr. Orange. CA. USA) were used. Extracted sixty human molars were used. Each self-adhesive resin cement was adhered to the dentin specimens (two rectangular sticks from each molar) in different wet conditions. Tensile bond strength were measured using universal testing machine (EZ Test. Shimadzu corporation. Kyoto. Japan) at a crosshead speed of 1.0mm/min. After the testing. bonding failures of specimens were observed by Operative microscope (OPMI pro, Carl Zeiss. Oberkochen, Germany). T-test was used to evaluate the effect of dentin surface wetness. One-way ANOVA test was used to evaluate the tensile bond strength of self-adhesive resin cements in the same condition. Scheffe's test was used for statistical analyzing at the 95% level of confidence. The result showed that wetness of dentin surface didn't affect tensile bond strength of self-adhesive resin cements and Maxcem showed the lowest tensile bond strength.
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