• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1437-1439
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• 1995

This paper investigates the effect of thermal oxidation on the profile of the residual stress along the depth of p+ silicon films by quantitative determination method. Two examples for the application of this method illustrate that most of p+ region is subjected to the tensile stress except the region near the front surface and that the stress gradient of the film oxidized at $1100^{\circ}C$ is more steep than that of the film oxidized at $1000^{\circ}C$.

• Corrosion Science and Technology
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• 제6권3호
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• pp.83-89
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• 2007

It is expected that advanced high strength steels (AHSS) would be widely used for vehicles with better performance in automotive industries. One of distinctive features of AHSS is the high value of carbon equivalent (Ceq), which results in the different properties in formability, weldability and paintability from those of common grade of steel sheets. There is an exponential relation between Ceq and electric resistance, which seems also to have correlation with the thickness of electric deposition (ED) coat. Higher value of Ceq of AHSS lower the thickness of ED coat of AHSS. Some elements of AHSS such as silicon, if it is concentrated on the surface, affect negatively the formation of phosphates. In this case, silicon itself doesn't affect the phosphate, but its oxide does. This phenomenon is shown dramatically in the welding area. Arc welding or laser welding melts the base material. In the process of cooling of AHSS melt, the oxides of Si and Mn are easily concentrated on the surface of boundary between welded and non‐welded area because Si and Mn could be oxidized easier than Fe. More oxide on surface results in poor phosphating and ED coating. This is more distinctive in AHSS than in mild steel. General results on paintability of AHSS would be reported, being compared to those of mild steel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• 대한금속재료학회지
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• 제50권8호
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• pp.575-582
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• 2012

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1 at% Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small amount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1 at% Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$, however, decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.

• Bulletin of the Korean Chemical Society
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• 제29권7호
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• pp.1349-1352
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• 2008

We report a novel patterning method for a homo-polymeric poly(3-hexylthiophene) (P3HT) nanofilm particularly capable of strong adhesion to a $SiO_2$ surface. An oxidized silicon wafer substrate was micro-contact printed with n-octadecyltrichlorosilane (OTS) monolayer, and subsequently its negative pattern was selfassembled with three different amino-functionalized alkylsilanes, (3-aminopropyl)trimethoxysilane (APS), N- (2-aminoethyl)-3-aminopropyltrimethoxy silane (EDAS), and (3-trimethoxysilylpropyl) diethylenetriamine (DETAS). Then, P3HT nanofilms were selectively grown on the aminosilane pre-patterned areas via the vapor phase polymerization method. To evaluate the adhesion, patterning, and the film itself, the PEDOT nanofilms and SAMs were investigated with a $Scotch^{(R)}$ tape test, contact angle analyzer, ATR-FT-IR, and optical and atomic force microscopes. The evaluation showed that the newly developed all bottom-up process can offer a simple and inexpensive patterning method for P3HT nanofilms robustly adhered to an oxidized Si wafer surface by the mediation of $FeCl_3$ and amino-functionalized alkylsilane SAMs.

• 한국주조공학회지
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• 제27권5호
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• pp.203-208
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• 2007

The high temperature properties of vanadium and molybdenum added high silicon ductile iron, so called V-Mo-Si ductile iron, were investigated. The (V,Mo) complex carbides and Mo carbides precipitated at the cellular boundaries of the as-cast specimens. The microhardness of the (V,Mo) carbides were in the range of 553-619, while that of the Mo carbides in the range of 341-390. The thermo-mechanical tests were carried out with a Gleeble system at 700 and $800^{\circ}C$ under vacuum condition. The tensile strengths of the specimen tested at $700^{\circ}C$ with the dynamic deformation rate of 50 mm/sec and those with the static deformation rate of 0.15 mm/sec were 235.7 and 115.3 MPa, while the reduction in area were 23.7 and 22.4%, respectively. At the high dynamic deformation rates, the tensile strength was steeply increased due to promoting the brittle fracture of pearlite in the matrix of the specimens. But the changes of the reduction in area with the deformation rates on the same specimens were negligible. The weight gain of the V-Mo-Si specimens oxidized in the air atmosphere for 6 hours at 800 and $900^{\circ}C$ were 1.1 and 4.1.%, respectively. The cross-sectional microstructure of oxidized specimens consisted of the porous external scale layer grown outside from the original surface, the dense internal scale layer grown into the original surface, the decarburized ferrite layer between the internal scale and the matrix of base metal. The (V,Mo) carbides and Mo carbides formed in the matrix of as-cast specimen did not decompose during oxidation at 900 for 24 hours in air atmosphere.

• 한국세라믹학회지
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• 제29권7호
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• pp.551-557
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• 1992

X-ray diffraction patterns, IR spectra and zeta-potentials of silicon nitride and $\beta$-Sialon powders were investigated before and after surface manipulations. $\beta$-Sialon powder was produced from Hadong Kaolin by the carbothermic reduction and simulataneous nitridation. Isoelectric points of as-prepared Si3N4 and $\beta$-Sialon powders were 8.4 and 7.4, respectively. After both silicon nitride and $\beta$-Sialon powders were oxidized at 80$0^{\circ}C$ for 24 h in air, the isoelectric points of these powders corresponded to that of silica (pH=3). I case of the addition of Darvan C as deflocculant, its isoelectric point was 3 and zeta-potential was nearly constant in the range of pH 5~12. When SN 7347 was used as deflocculant, its isoelectric point was 8.3 and zeta-potential over -156 mV was measured above pH 11.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.92-97
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900 ^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^2$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Journal of Industrial and Engineering Chemistry
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• 제67권
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• pp.417-428
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• 2018

In this study, we fabricated hierarchically self-assembled thin films composed of graphene oxide (GO) sheets and gold nanoparticles (Au NPs) using the Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS) techniques and investigated their gas-sensing performance. First, a thermally oxidized silicon wafer ($Si/SiO_2$) was hydrophobized by depositing the LB films of cadmium arachidate. Thin films of ligand-capped Au NPs and GO sheets of the appropriate size were then sequentially transferred onto the hydrophobic silicon wafer using the LB and the LS techniques, respectively. Several different films were prepared by varying the ligand type, film composition, and surface pressure of the spread monolayer at the air/water interface. Their structures were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM), and their gas-sensing performance for $NH_3$ and $CO_2$ was assessed. The thin films of dodecanethiol-capped Au NPs and medium-sized GO sheets had a better hierarchical structure with higher uniformity and exhibited better gas-sensing performance.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.291-297
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• 1996

The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl$_{x}$(x$_{x}$ (x$_{x}$ (1