Effect of Process Parameters on the Residual Stress Distribution in p+ Films

공정변수가 p+ 박막의 잔류응력 분포에 미치는 영향

This paper investigates the effect of thermal oxidation on the profile of the residual stress along the depth of p+ silicon films by quantitative determination method. Two examples for the application of this method illustrate that most of p+ region is subjected to the tensile stress except the region near the front surface and that the stress gradient of the film oxidized at $1100^{\circ}C$ is more steep than that of the film oxidized at $1000^{\circ}C$.