• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.1-7
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• 2000

In this paper, we present n-channel GaAs MOSFET having $Al_2O_3$ as gate in insulator fabricated on a semi-insulating GaAs substrate. 1 ${\mu}$m thick undoped GaAs buffer layer, 1500 ${\AA}$ thick n-type GaAs, undoped 500 ${\AA}$ thick AlAs layer, and 50 ${\AA}$ GaAs caplayer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate oxidized. When it was wet oxidized, AlAs layer was fully converted $Al_2O_3$. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S${\cdot}$I GaAs was suitable in realizing depletion mode GaAs MOSFET.

• Journal of Korea Foundry Society
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• v.27 no.5
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• pp.203-208
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• 2007

The high temperature properties of vanadium and molybdenum added high silicon ductile iron, so called V-Mo-Si ductile iron, were investigated. The (V,Mo) complex carbides and Mo carbides precipitated at the cellular boundaries of the as-cast specimens. The microhardness of the (V,Mo) carbides were in the range of 553-619, while that of the Mo carbides in the range of 341-390. The thermo-mechanical tests were carried out with a Gleeble system at 700 and $800^{\circ}C$ under vacuum condition. The tensile strengths of the specimen tested at $700^{\circ}C$ with the dynamic deformation rate of 50 mm/sec and those with the static deformation rate of 0.15 mm/sec were 235.7 and 115.3 MPa, while the reduction in area were 23.7 and 22.4%, respectively. At the high dynamic deformation rates, the tensile strength was steeply increased due to promoting the brittle fracture of pearlite in the matrix of the specimens. But the changes of the reduction in area with the deformation rates on the same specimens were negligible. The weight gain of the V-Mo-Si specimens oxidized in the air atmosphere for 6 hours at 800 and $900^{\circ}C$ were 1.1 and 4.1.%, respectively. The cross-sectional microstructure of oxidized specimens consisted of the porous external scale layer grown outside from the original surface, the dense internal scale layer grown into the original surface, the decarburized ferrite layer between the internal scale and the matrix of base metal. The (V,Mo) carbides and Mo carbides formed in the matrix of as-cast specimen did not decompose during oxidation at 900 for 24 hours in air atmosphere.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.457-461
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• 2004

The thermomechanically treated $Ti-45.4\%Al-4.8\%Nb(at\%)$ alloy was oxidized between 800 and $1000^{\circ}C$ in air, and the oxidation characteristics were studied. The dissolution of Nb in the oxide scale was observed from the TEM study. The Pt marker test revealed that the oxidation process was controlled by the outward diffusion of Ti ions and the inward diffusion of oxygen ions. During oxidation, the evaporation of Nb-oxides was found to occur to a small amount. Niobium tended to pile-up at the lower part of the oxide scale, which consisted primarily of an outer $TiO_2$ layer, and an intermediate $Al_{2}O_{3}-rich$ layer, and an inner mixed layer of ($TiO_{2}+Al_{2}O_{3}$).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.149-155
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• 1996

A new technique wasdeveloped which obtains selectively the htick fully recessed oxidized porous silicon layer (OPSL) with good dielectric property. The porous silicon layer was ocnverted to thick fully recessed oxide (FRO) with 3-step (1${\mu}$m, 1.5${\mu}$m, 1.8${\mu}$m) by multi-step thermal oxidation (after 400$^{\circ}$C, 1 hour by dry oxidation, 700$^{\circ}$C, 1 hour and then 1100$^{\circ}$C, 1 hour by wet oxidation). The breakdwon field of the FRO was about 2.5MV/cm and the leakage current was several pA ~ 100 pA in the range of 0 of 90 pF. The progress of oxidation of a porous silicon layer was studied by examining the infrared abosrption spectra. The refractive index (1.51) of the fRO, which was measured by ellipsometer, was comparable to that of the thermally grown silicon dioxide (1.46). The etching rate (1600${\AA}$/min) of the FRO was also almost equal to that of the thermal oxide.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.676-681
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• 2002

Microstructure, mechanical properties, and oxidation resistance of TiAIN thin films deposited on quenched and tempered STD61 tool steel by arc ion plating were studied using XRD, XPS and micro-balance. The TiAIN film was grown with the (200) orientation. The grain size of TiAIN thin film decreased with increasing Al contents, while chemical binding energy increased with Al contents. When hard coating films were oxidized at $850^{\circ}C$ in air, oxidation resistance of both TiN and TiCN films became relatively lower since the surface of films formed non-protective film such as $TiO_2$. However, oxidation resistance of TiAIN film was excellent because its surface formed protective layer such as $_A12$$O_3$ and $_Al2$$Ti_{7}$$O_{15}$, which suppressed oxygen intrusion.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.151-157
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• 1996

We propose a mechanism for the formation of pinholes in the Si-buffer layer, through the observations with varying the process- and structure variables in the SEPOX (selective poly-oxidation) process, an isolation method for sub-u DRAMs. Pinholes are formed through the accumulation of Si vacancies generated by the oxidation of Si, in which Si atoms leave the sites (vacancies) at the Si/SiO$_{2}$ interfaces and diffuse into the oxide to be oxidized near interface. In the course of the accumulation of Si-vacancies, the stress induced in the Si-buffer layer affects the migration of vacancies to result in the final size and distribution of pinholes. This paper may be, to our knowledge, the first report about the oxidation-induced pinhole in the Si/SiO$_{2}$ system.

• Progress in Superconductivity and Cryogenics
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• v.18 no.1
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• pp.33-36
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• 2016

Suppression of the superconducting transition temperature ($T_c$) of NbN thin films in superconductor/ferromagnet multilayers has been investigated. Both superconducting NbN and ferromagnetic FeN layers were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. The thickness of FeN films was fixed at 20 nm, while the thickness of NbN films was varied from 3 nm to 90 nm. $T_c$ suppression was clearly observed in NbN layers up to 70 nm thickness when NbN layer was in proximity with FeN layer. For a given thickness of NbN layer, the magnitude of $T_c$ suppression was increased in the order of Si/FeN/NbN, Si/NbN/FeN, and Si/FeN/NbN/FeN structure. This result can be used to design a spin switch whose operation is based on the proximity effect between superconducting and ferromagnetic layers.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.109-110
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• 2013

Medium carbon steel was aluminized by hot dipping into molten Al or Al-1%Si baths. After hot-dipping in these baths, a thin Al-rich topcoat and a thick alloy layer rich in $Al_5Fe_2$ formed on the surface. A small a mount of FeAl and $Al_3Fe$ was incorporated in the alloy layer. Silicon from the Al-1%Si bath was uniformly distributed throughout the entire coating. The hot dipping increased the microhardness of the steel by about 8 times. Heating at $700-1000^{\circ}C$ however decreased the microhardness through interdiffusion between the coating and the substrate. The oxidation at $700-1000^{\circ}C$ in air formed a thin protective ${\alpha}-Al_2O_3$ layer, which provided good oxidation resistance. Silicon was oxidized to amorphous silica, exhibiting a glassy oxide surface.

• Journal of the Korean Vacuum Society
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• v.3 no.4
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• pp.414-419
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• 1994

Surface of Pt/$Al_2O_3$ model catalyst was produced on an aluminum foil with surface area of 1 $cm^2$ The aluminum surface was oxidized under $10 ^5Torr$Torr oxygen and platinum was deposited on top of the oxide layer using a plasma evaporation source. Conversion of I-butene was performed on the model catalyst surface. Isomerization was the major reaction in I-butene conversion on the aluminum oxide layer. Addition of Pt on the aluminum oxide layer induces hydrogenation of I-butene. Selectivity for the hydrogenation increases as the amount of Pt on alumina increases.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.253-261
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• 1992

Ti-Al intermetallic compounds which can be used in gas turbine at elevated temperature were inves-tigated in order to improve oxidation resistance by the formation of protective oxide scale. Four Ti-Al alloys were prepared by plasma arc melting. As the amount of Al was increased among the alloys, oxida-tion resistance was improved by the formation of relatively purer Al2O3 layer. However, the alloys which have less amount of Al formed a duplex layer of Al2O3 and TiO2. When samples were oxidized in pure oxygen instead of air, oxidation resistance was improved because of formation of the purer Al2O3 layer.