Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 7
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- Pages.149-155
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- 1996
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- 1016-135X(pISSN)
A selective formation of high-quality fully recessed oxide
양질의 FRO(fully recessed oxide)의 선택적 형성
Abstract
A new technique wasdeveloped which obtains selectively the htick fully recessed oxidized porous silicon layer (OPSL) with good dielectric property. The porous silicon layer was ocnverted to thick fully recessed oxide (FRO) with 3-step (1
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