• Journal of Integrative Natural Science
• /
• v.11 no.1
• /
• pp.14-18
• /
• 2018

Nickel oxide nanofibers were synthesized by electrospinning with nickel(II) acetate tetrahydrate and polyvinylpyrrolidone and calcination process. The nanofiber shape was easily detected from the nanofibers with high Ni contents after calcined at $600^{\circ}C$ and the crystal structure of layer-by-layer growth was observed from SEM images at $900^{\circ}C$. XRD and TEM results showed metallic Ni and NiO structure were formed at nanofibers obtained at 600 and $900^{\circ}C$ and the crystallite size was calculated from 25 to 55 nm. The surface of nanofibers was fully oxidized from the deconvoluted Cu 2p and O 1s XPS spectra.

• The Korean Journal of Ceramics
• /
• v.5 no.2
• /
• pp.115-118
• /
• 1999

Carbon composites with $MoSi_2$ dispersion were prepared by hot-pressing at $1700^{\circ}C$ under 30 MPa for 1 h using polysilazance as binding material. The composites consisted of C, $Mo_{4.8}Si_3C_{0.6}$ and SiC. Bulk density and porosity of the carbon composites with 10 vol% $MoSi_2$ was 1.8g.$\textrm{cm}^{-3}$ and 34%, respectively. This composite was oxidized about 0.05mm from the surface of the carbon composite after oxidation test at $1500^{\circ}C$ for 10h in air. Formation of the $SiO_2$ glass layer was observed by SEM. When this composite suffered damage in the coating layer, it had hardly farther oxidation because of its self-repairing property. The composite prepared in this study indicated good oxidation resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.118-119
• /
• 2007

High performance three-dimensional (3-D) stacked poly-Si complementary metal-oxide semiconductor (CMOS) inverters with a high quality laser crystallized channel were fabricated. Low temperature crystallization methods of a-Si film using the excimer-laser annealing (ELA) and sequential lateral solidification (SLS) were performed. The NMOS thin-film-transistor (TFT) at lower layer of CMOS was fabricated on oxidized bulk Si substrate, and the PMOS TFT at upper layer of CMOS was fabricated on interlayer dielectric film. The 3-D stacked poly-Si CMOS inverter showed excellent electrical characteristics and was enough for the vertical integrated CMOS applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.26-26
• /
• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

• Journal of the Korean institute of surface engineering
• /
• v.31 no.5
• /
• pp.278-285
• /
• 1998

Alloys of Ti-15Mo-5Zr-3Al(wt%) were oxidized in air between 700 and $900^{\circ}C$. It was found that the oxidation resistance is much better than that of either commercially available pure Ti-6Al-4V(wt%) alloys. The oxide scales were primarily composed of thick Ti-ox-ides which were formed by the inward diffusion of oxygen from the atmosphere. At higher temperatures a thin $\alpha$-$Al_2O_3$ layer was formed on Ti-oxides owing to the outward diffusion of Al from the base alloys. Molybdenum, the noblest metal among the alloy components, was predominantly present behind the oxide-substrate interface. Zirconium, an oxygen active metal, was present at both the oxide layer and the substrate.

• Polymer(Korea)
• /
• v.30 no.4
• /
• pp.291-297
• /
• 2006

In this study, adsorption properties of oxidized NO by plasma using aminated polyolefin-g-GMA hybrid anion exchange fibers were investigated. The maximum conversion of $NO_2$ by plasma was 49% at the conditions of 200 ppm NO, 10% $O_2$ and 30 L/min of flow rate. The adsorption content for N02 of hybrid anion exchange fibers increased with increasing the swelling ratio and the highest value was 1.5 g $H_2O/g$ IEF. The adsorption of $NO_2$ by hybrid anion exchange fibers were very fast until 10 min and reached its maximum value of 80% at 120 min. Ion exchange capacity of hybrid anion exchange fibers increased with increasing the swelling ratio and it showed the highest 0.6 mmol/g IEF values at L/D=5. The adsorption isotherm model for hybrid anion exchange fibers were closer to Freundlich than Langmuir adsorption isotherm model. It was shown that adsorption of the multi-molecular layer was dominant.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.2 no.3
• /
• pp.431-437
• /
• 1998

In this paper, we have investigated the electrical properties of ultra-thin nitrided oxide(NO) and re-oxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. Especially, we have studied a variation of I-V characteristics, gate voltage shift, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_bd$) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SIO$\_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and (Q$\_bd$) performance over the NO film and SIO$\_2$, while maintaining a similar electric field dependence compared with NO layer.

• Nuclear Engineering and Technology
• /
• v.53 no.8
• /
• pp.2629-2639
• /
• 2021

Within the frame of the EMPIrE test, four monolithic mini-plates were irradiated in the ATR reactor. In two of them, the monolithic U(Mo) foil had been PVD-coated with Zr before the plate manufacturing. Extensive microstructural characterizations were performed on a fresh archive mini-plate, using Optical Microscopy (OM), Scanning Electron Microscopy (SEM) combined with Energy Dispersive Spectroscopy (EDS), Electron Backscattered Diffraction (EBSD) and Focused Ion Beam (FIB)/Transmission Electron Microscopy (TEM) with nano EDS. A particular attention was paid to the examination of the U(Mo) foil, the PVD coating, the cladding/Zr and Zr/U(Mo) interfaces. The Zr coating has a thickness around 15 ㎛. It has a columnar microstructure and appears dense. The cohesion of the cladding/Zr and Zr/U(Mo) interfaces seems to be satisfactory. An almost continuous layer with a thickness of the order of 100-300 nm is present at the cladding/Zr interface and corresponds to an oxidized part of the Zr coating. At the Zr/U(Mo) interface, a thin discontinuous layer is observed. It could correspond to locally oxidized U(Mo). This work provides a basis for interpreting the results of characterizations on EMPIrE irradiated plates.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.5
• /
• pp.285-289
• /
• 2003

This paper proposes a 10 ${\mu}{\textrm}{m}$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and rnicrornachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and rapid thermal oxidation (RTO) process (105$0^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to 10 ${\mu}{\textrm}{m}$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 1 dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about - 20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.6
• /
• pp.365-370
• /
• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.