Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Annealing Effects of Gate-insulator on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors

게이트절연막의 열처리가 Zinc Tin Oxide 투명 박막트랜지스터의 특성에 미치는 영향

  • Ma, Tae Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
  • 마대영 (경상대학교 전기공학과 및 공학연구원)
  • Received : 2015.04.13
  • Accepted : 2015.05.24
  • Published : 2015.06.01
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Abstract

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated on oxidized $n^+$ Si wafers. The thickness of ~30 nm $Al_2O_3$ films were deposited on the oxidized Si wafers by atomic layer deposition, which acted as the gate insulators of ZTO TTFTs. The $Al_2O_3$ films were rapid-annealed at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1,000^{\circ}C$, respectively. Active layers of ZTO films were deposited on the $Al_2O_3/SiO_2$ coated $n^+$ Si wafers by rf magnetron sputtering. Mobility and threshold voltage were measured as a function of the rapid-annealing temperature. X-ray photoelectron spectroscopy (XPS) were carried out to observe the chemical bindings of $Al_2O_3$ films. The annealing effects of gate-insulator on the properties of TTFTs were analyzed based on the results of XPS.

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