Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on High Performance Lateral Super Barrier Rectifier for Integration in BCD (Bipolar CMOS DMOS) Platform

BCD Platform과의 집적화에 적합한 고성능 Lateral Super Barrier Rectifier의 연구

  • Kim, Duck-Soo (Department of Electronic Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electronic Engineering, Chungnam National University)
  • 김덕수 (충남대학교 전자전파정보통신공학과) ;
  • 이희덕 (충남대학교 전자전파정보통신공학과)
  • Received : 2014.12.04
  • Accepted : 2015.05.24
  • Published : 2015.06.01
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Abstract

This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, $V_F=0.38V$ @ $I_F=35mA$, T_j = $150^{\circ}C$ were obtained with very low leakage current characteristic of 3.25 uA.

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References

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