• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.762-765
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• 2013

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and gate oxide thickness for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.425-430
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• 2014

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, analytical model showed that subthreshold current was influenced by parameters of Gaussian function and gate oxide thickness of DGMOSFET.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.379-381
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• 2009

The simulation model for metal-supported Solid Oxide Fuel Cell(SOFC) is developed in this study. Open circuit voltage is calculated using Nernst equation and Gibbs free energy is required by thermodynamic. The exchange current densities are compared with experimental results since exchange current density is most effective factor for the activation loss. Liu's study is used for the exchange current density of cathode, BSCF, and Koide's result is applied for the exchange current density of anode, Ni/YSZ. For the ohmic loss, ionic conductivity of YSZ is described from Kilner's mode and the data are compared with Wanzenberg's experimental data. Diffusivity is an important factor for the mass transfer through the porous medium. Both binary diffusion and Knudsen diffusion are considered as the diffusion mechanism. For validation, simulation results at this work are compared with our experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.356-360
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• 2015

The specific role of current collectors was investigated at the electrolyte/electrode interface of solid oxide fuel cells (SOFCs). Ag grids were fabricated as current collectors using electrohydrodynamic (EHD) jet printing for precise control of the grid geometry. The Ag grids reduced both the ohmic and polarization resistances as the pitch of the Ag grids decreased from $400{\mu}m$ to $100{\mu}m$. The effective electron distribution along the Ag grids improved the charge transport and transfer at the interface, extending the active reaction sites. Our results demonstrate the applicability of EHD jet printing to the fabrication of efficient current collectors for performance enhancement of SOFCs.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.302-305
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• 2016

In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.545-548
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• 1998

Thin film SOI(Silicon-On-Insulator) devices exhibit floating body effect. In this paper, SOI NMOSFET is proposed to solve this problem. Some part of gate oxide was considered to be 30nm~80nm thicker than the other normal gate oxide and simulated with TSUPREM-4. The I-V characteristics were simulated with 2D MEDICI mesh. Since part of gate oxide has different oxide thickness in proposed device, the gate electric field strength is not the same throught the gate and consequently the reduction of current kink effect is occurred.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.359-363
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• 1989

Recently, it is reported that the behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration. Furthermore, when thin oxide films are applied in practical device, the presence of oxide defects will be a serious problem. In this paper, because TDDB is the useful method to measure the effective density of defects, we stressed MOS structure that is 150 A of thermally grown $SiO_2$as a function of electric field (9-19 MV/cm), temperature ($22^{\circ}C$ - $150^{\circ}C$) and current. By examing TDDB under positive voltage, long-term oxide breakdown reliabiliy is described. From these data, breakdown wearout limitation for the oxide films can be characterized.

• Biomedical Science Letters
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• v.16 no.4
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• pp.259-264
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• 2010

This study was designed to investigate the effects of nitric oxide on the neuronal activity of rat cerebellar Purkinje cells. Sprague-Dawley rats aged 14 to 16 days were decapitated under ether anesthesia. After treatment with pronase and thermolysin, the dissociated Purkinje cells were transferred into a chamber on an inverted microscope. Spontaneous action potentials and potassium current were recorded by standard patch-clamp techniques under current and voltage-clamp modes respectively. 15 Purkinje cells revealed excitatory responses to $20\;{\mu}M$ of sodium nitroprusside (SNP) and 4 neurons (20%) did not respond to SNP. Whole potassium currents of Purkinje cells were decreased by SNP (n=10). Whole potassium currents of Purkinje cells were also decreased by L-arginine, substrate of nitric oxide (n=10). These experimental results suggest that nitric oxide increases the neuronal activity of Purkinje cells by altering the resting membrane potential and after hyperpolarization.