• 제목/요약/키워드: Oxide characteristic

검색결과 468건 처리시간 0.037초

동축형 다공성재 분사기의 에탄올/아산화질소 연소성능 (Combustion Performance of a Coaxial Porous Injector using Ethanol/N2O Propellant)

  • 김도헌;이건웅;구자예
    • 한국추진공학회지
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    • 제17권5호
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    • pp.37-46
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    • 2013
  • 2상유체 동축형 다공성재 분사기는 중심포스트에서 분사되는 액체제트 주위로 형성된 다공성재 실린더의 내부 표면에서 기체를 반경방향으로 분사한다. 동축형 다공성재 분사기의 추진제 혼합비에 따른 연소성능을 분석하기 위하여 에탄올/아산화질소 추진제를 사용한 단일 축소형 분사기의 연소시험이 수행되었으며, 수집된 데이터 및 계산된 성능인자들에 대하여 불확실도 해석이 이루어졌다. 연소시험에 의한 추진제 혼합비에 따른 특성속도 경향은 CEA 이론값과 유사하였으나 최대값을 가지는 혼합비 영역이 이론혼합비영역에 가까웠다. 특성속도효율은 산화제 과잉 영역으로 갈수록 더 높게 나타났다.

AC전압 인가에 따른 알루미늄 양극산화 공정 및 박막 특성

  • 이정택;최재호;김근주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.242-242
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    • 2009
  • Fabrication of Anodic aluminum oxide under DC vias condition has been studied. When bias and time of anodic aluminum oxide process change, the hole distance and diameter size change. Comparison of fabricated AAO between AC vias and DC vias condition has been studied in this experiment. The first and second anodization of one aluminum is done by using DC and AC power supplier. And first and second anodization of another aluminum is done by DC power supplier. The size of the aluminum is $1cm{\times}3cm$, and second anodic aluminum oxide process takes about 45min. It is found that the hexagonal shape appears on the surface of the AAO. AC power source can fabricate aao which have a nano hole array. We can see that the hole on the surface of the AC vias has a better rounded hole than DC vias AAO. we need more data so we can get characteristic about AC power generated AAO.

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알루미나 형틀을 이용한 서로 다른 직경을 갖는 모양을 가진 탄소나노튜브의 합성 (Synthesis of Stepped Carbon Nanotubes in Anodic Aluminum Oxide Templates)

  • 임완순;조유석;최규석;김도진
    • 한국재료학회지
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    • 제14권9호
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    • pp.664-669
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    • 2004
  • Anodic aluminum oxide (AAO) with pores of various diameter, density, and thickness values was obtained through control of the anodization parameters including voltage, temperature, pore widening time, anodization time, etc. The pore diameter was controlled by a pore widening in an etchant, and alumina templates having stepped nano-channels were fabricated by repetition of anodization and pore widening processes. Stepped carbon nanotubes (CNTs) were then grown on the stepped AAO templates by pyrolysis of acetylene without using the catalyst. High-resolution transmission electron microscopy images revealed that CNTs have a multi-wall structure made of graphite flakes of several nm sizes. The current-voltage characteristic of the sloped and linear CNTs were also examined.

$B_4C$의 첨가에 따른 동계소결합금 마찰재의 마찰특성 변화에 관한 연구 (A Study on the Frictional Characteristics of $B_4C$ Added Cu Base Sintered Friction Materials)

  • 정동윤;김기열;조정환
    • Tribology and Lubricants
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    • 제12권3호
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    • pp.48-54
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    • 1996
  • Examined in this paper, is the effect of B$_{4}$C addition on the frictional characteristics of Cu-Sn based sintered friction materials. For the specimens 1wt%, 2wt% and 4wt% of B$_{4}$C were added into the reference material. A pin-on-disk type friction tester was used to,measure the friction torque with respect to the surface temperature and sliding distance. Wear mechanism of each specimen is analyzed in the view point of the oxide film formation. The specimen containing 4wt% of B$_{4}$C showed stable friction and low wear since the oxide film was sustained up to higher surface temperature ranges.

선 대 평판형 플라즈마 반응기를 이용한 자계 시뮬레이션과 질소산화물제거 특성 (Simulation of Magnetic Field and Removal Characteristic of Nitrogen Oxide Using Wire-Plate Type Plasma Reactor)

  • 이현수;박재윤
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권9호
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    • pp.407-411
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    • 2003
  • The purpose of this paper is to study the removal of nitrogen oxide(NOx) using a wire-plate type plasma reactor with magnet attached for indoor air purification. In order to produce a more effective reactor, we conducted magnetic field simulations. The results of the magnetic field simulations show that NOx can be removed more effectively. The results from the magnetic field simulation show that when 7 magnets were applied to the reactor, the magnetic flux density was at its highest amount than when using 0, 3, or 5 magnets. From the data obtained by the simulation results a plasma reactor was made and thus, several experiments were conducted. The best removal efficiency was obtained with 14 W AC power to the reactor with 5 magnets.

Transient Characteristic of a Metal-Oxide Semiconductor Field Effect Transistor in an Automotive Regulator in High Temperature Surroundings

  • Kang, Chae-Dong;Shin, Kye-Soo
    • Transactions on Electrical and Electronic Materials
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    • 제11권4호
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    • pp.178-181
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    • 2010
  • An automotive IC voltage regulator which consists of one-chip based on a metal-oxide semiconductor field effect transistor (MOSFET) is investigated experimentally with three types of packaging. The closed type is filled with thermal silicone gel and covered with a plastic lid on the MOSFET. The half-closed type is covered with a plastic case but without thermal silicone gel on the MOSFET. Opened type is no lid without thermal silicone gel. In order to simulate the high temperature condition in engine bay, the operating circuit of the MOSFET is constructed and the surrounding temperature is maintained at $100^{\circ}C$. In the overshoot the maximum was mainly found at the half-closed packaging and the magnitude is dependent on the packaging type and the surrounding temperature. Also the impressed current decreased exponentially during the MOSFET operation.

MOS 소자용 Silicon Carbide의 열산화막 생성 및 특징 (Characteristics and Formation of Thermal Oxidative Film Silicon Carbide for MOS Devices)

  • 오경영;이계홍;이계홍;장성주
    • 한국재료학회지
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    • 제12권5호
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    • pp.327-333
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    • 2002
  • In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

RAPID THERAL PROCESS를 응용한 THIN DIELECTRIC FILM의 전기적 특성에 관한 연구. (ELECTRICAL CHARACTERISTICS OF THIN DIELECTRIC FILMS PREPARED BY RAPID THERMAL PROCESS)

  • 이앙구;박성식;최진석;류지효
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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    • pp.542-545
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    • 1987
  • THE ELECTRICAL CHARACTERISTICS Of RAPID THERMAL OXIDES AND NITRIDED OXIDES HAVE BEEN INVESTIGATED. R.T.OXIDE FILMS HAVE BEEN PREPARED BY ONLY R.T. OXIDATION OR R.T.OXIDATION AND SUBSEQUENT R.T.ANNEAL. NITRIDED OXIDE FILMS HAVE BEEN PREPARED BY R.T.OXIDATION AND SUBSEQUENT R.T.NITRIDATION.AND CONVENTIONAL OXIDES ALSO HAVE BEEN PREPARED TO COMPARE WITH R.T.P OXIDES. R.T.ANNEALED OXIDES SHOW EXCELLENT BREAKDOWN FIELD. LEAKAGE CURRENT AND TDDB CHARACTERISTICS. ALSO, CAPACITANCE Of R.T NITRIDED OXIDES ARE SUPERIOR BY 10% TO CONVENTIONAL OXIDES, BUT TDDB CHARACTERISTIC ARE POORER THAN OXIDE FILMS.

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산화철 배소에 따른 분체 특성 및 Sr-ferrite 자석의 소결 특성 (Characteristic of Iron Oxide and the Magnetic Properties of Sr-ferrite by Roasting Temperature of Iron Oxide)

  • 장세동
    • 자원리싸이클링
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    • 제12권6호
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    • pp.19-25
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    • 2003
  • 제철소 냉연 공정의 염산 폐액에서 ruthner process 공법으로 제조된 산화철을 사용하여 2차 배소 온도변화에 따른 산화철의 분체 특성을 조사하였고, 산화철과 스트론튬을 건식 혼합 및 가소후 Sr-ferrite 자석을 제조하여 자기적 물리적 특성을 조사하였다. Ruthner proces의 산화철을 2차 배소를 실시한 경우, Cl- 함량이 적고 분체 특성이 안정적인 배소온도는 $800^{\circ}C$ 부근으로, 평균 입자(APS)는 1.5 $mu extrm{m}$, apparent bulk density(ABD)는 1.4 g/$m\ell$ 이며, Cl- 함유량은 0.05% 이하를 나타내었다. Ruthner process에서 제조된 산화철을 vibrating disk mill에서 1차 분쇄를 실시한 경우, Sr-ferrite magnet의 보자력(HcJ)은 229 kA/m에서 251 kA/m로 향상하였다. Sr-ferrite magnet의 소결 온도 변화에 따른 잔류자속밀도와 보자력의 희귀식은 Br≒-0.258HcJ+494의 함수 관계를 나타내고 있으며, 성형 중 가한 자장 방향과 수직방향에 따른 수축비는 산화철의 2차 배소 온도 $800^{\circ}C$까지는 1.6으로 안정적인 판상형으로 결정 성장을 나타내고 있으나, 그 이상의 온도로 2차 배소한 산화철을 사용한 경우에는 소결에서 결정이 더 커진 것으로 판단된다.