• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.71-75
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• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.541-546
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• 1990

The current conduction and dielectric breakdown properties of oxide grown on phosphorous-doped polysilicon have been investigated by means of the ramped I-V measurements. The effective barrier heights of polyoxide grown by different silicon deposition and oxidation conditions were calculated from the Fowler-Nordheim tunneling characteristic. The average critical fields were also obtained for each film. From the results, the high temperature oxided polyoxide grown on amorphous silicon film shows superior electrical characteristics comparing to the other films.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1919-1921
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• 1999

AlN thin films were fabricated by sputter for the application of MIS device with Al/AlN/Si structure. We controled that sub-temperature room-temperature. Sputtering pressure 5 mTorr, flow ratio Ar:$N_2$=1:1(4sccm:4sccm), and appended hydrogen gas $0{\sim}5%$. AlN thin films thickness fabricated to maintain $2700{\AA}$ time control. Before the experiment remove to the contaminated material use the Ultrasonic every 10 minute use the acetone and ethanol, then use the HF remove oxide-substance at 10 second. To analyze characteristic of the $H_2$ gas addition period, C-V and I-V characteristic make and experiment $H_2$ gas at addition period progressive capability of I-V and C-V characteristic.

• ETRI Journal
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• v.35 no.5
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• pp.797-807
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• 2013

In this paper, an input receiver with a hysteresis characteristic that can work at voltage levels between 0.9 V and 5 V is proposed. The input receiver can be used as a wide voltage range Schmitt trigger also. At the same time, reliable circuit operation is ensured. According to the research findings, this is the first time a wide voltage range Schmitt trigger is being reported. The proposed circuit is compared with previously reported input receivers, and it is shown that the circuit has better noise immunity. The proposed input receiver ends the need for a separate Schmitt trigger and input buffer. The frequency of operation is also higher than that of the previously reported receiver. The circuit is simulated using HSPICE at 0.35-${\mu}m$ standard thin oxide technology. Monte Carlo analysis is conducted at different process conditions, showing that the proposed circuit works well for different process conditions at different voltage levels of operation. A noise impulse of ($V_{CC}/2$) magnitude is added to the input voltage to show that the receiver receives the correct logic level even in the presence of noise. Here, $V_{CC}$ is the fixed voltage supply of 3.3 V.

• Journal of the Korean Applied Science and Technology
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• v.18 no.4
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• pp.306-315
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• 2001

Our study is aimed at proposal of systematic verification method of molecular structure using measuring method of selective ionic determination and spectrometry on 34 kinds of surfactants such as sodium dodecyl sulfate(SDS) which are most widely used today. In the IR spectrum, unsaturated fatty acids reveal themselves by HC= at $3000{\sim}3020cm^{-1}$, and intensity of $720cm^{-1}$ depends on carbon length of alkyl group. Also ethylene oxide(EO) adducts exhibit weak characteristic bands by $-CH_{2}-CH_{2}-O$ at 1350, 1100 and $950cm^{-1}$. Isethionate can be distinguished from diester succinate by intensity ratio of 1740 and $1200cm^{-1}$ spectrums, the ratio of latter is close to 1 due to 2 carboxylate radical in diester succinate. Quaternary ammonium salts exhibit characteristic band of $C_{4}N^{+}$ at $1000-900㎝^{-1}$. In the case of dialkyl dimethyl ammonium salts in quaternary ammonium surfactants, the spectrum of $3000cm^{-1}$ by $N-CH_{3}$ collapses to a very weak band at $3020cm^{-1}$. In ammonium heterocyclic derivatives, pyridinium salts show characteristic bands at 1640 and $1460cm^{-1}$, while imidazolinium salts exhibit characteristic band at $1620-1610cm^{-1}$. In the characteristic spectrum at $1080-1050cm^{-1}$ on OH radicals of the alkyl esters, primary alcohol appears as weak band and the 2 bands show in almost same intensity when primary and secondary alcohols exist together in one molecule. Also, alkyl ester of polyhydric alcohols appears as various broad band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.537-542
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• 2011

Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.

• Clean Technology
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• v.19 no.4
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• pp.446-452
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• 2013

In this paper, the wet mixing method was introduced to prepare spinel lithium manganese oxide (LMO) with $Li_2CO_3$ and $MnCO_3$. The physical properties of the resulting lithium manganese oxide were characterized by the XRD and SEM. The adsorption properties of LMO for $Li^+$ were investigated by batch methods. The maximum adsorption capacity of lithium was calculated from Langmuir isotherm and found to be 27.25 mg/g. The LMO are found to have a remarkable lithium ion-sieve property with distribution coefficients ($K_d$) in the order of $Ca^{2+}$ < $K^+$ < $Na^+$ < $Mg^{2+}$ < $Li^+$, which is promising in the lithium extraction from seawater.

• Journal of Pharmaceutical Investigation
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• v.29 no.4
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• pp.295-307
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• 1999

Using a Rheometries Fluids Spectrometer (RFS II), the dynamic viscoelastic properties of aqueous poly(ethylene oxide) (PEO) solutions in small amplitude oscillatory shear flow fields have been measured over a wide range of angular frequencies. The angular frequency dependence of the storage and loss moduli at various molecular weights and concentrations was reported in detail, and the result was interpreted using the concept of a Deborah number De. In addition, the experimentally determined critical angular frequency at which the storage and loss moduli become equivalent was compared with the calculated characteristic time (or its inverse value), and their physical significance in analyzing the dynamic viscoelastic behavior was discussed. Finally, the relationship between steady shear flow and dynamic viscoelstic properties was examined by evaluating the applicability of some proposed models that describe the correlations between steady flow viscosity and dynamic viscosity, dynamic fluidity, and complex viscosity. Main results obtained from this study can be summarized as follows: (1) At lower angular frequencies where De<1, the loss modulus is larger than the storage modulus. However, such a relation between the two moduli is reversed at higher angular frequencies where De>l, indicating that the elastic behavior becomes dominant to the viscous behavior at frequency range higher than a critical angular frequency. (2) A critical angular frequency is decreased as an increase in concentration and/or molecular weight. Both the viscous and elastic properties show a stronger dependence on the molecular weight than on the concentration. (3) A characteristic time is increased with increasing concentration and/or molecular weight. The power-law relationship holds between the inverse value of a characteristic time and a critical angular frequency. (4) Among the previously proposed models, the Cox-Merz rule implying the equivalence between the steady flow viscosity and the magnitude of the complex viscosity has the best validity. The Osaki relation can be regarded to some extent as a suitable model. However, the DeWitt, Pao and HusebyBlyler models are not applicable to describe the correlations between steady shear flow and dynamic viscoelastic properties.

• Journal of Pharmaceutical Investigation
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• v.29 no.3
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• pp.193-203
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• 1999

In order to investigate systematically the steady shear flow properties of aqueous po1y(ethylene oxide) (PEO) solutions having various molecular weights and concentrations, the steady flow viscosity has been measured with a Rheometrics Fluids Spectrometer (RFS II) over a wide range of shear rates. The effects of shear rate, concentration, and molecular weight on the steady shear flow properties were reported in detail from the experimentally measured data, and then the results were interpreted using the concept of a material characteristic time. In addition, some flow models describing the non-Newtonian behavior (shear-thinning characteristics) of polymeric liquids were employed to make a quantitative evaluation of the steady flow behavior, and the applicability of these models was examined by calculating the various material parameters. Main results obtained from this study can be summarized as follows: (1) At low shear rates, aqueous PEO solutions show a Newtonian viscous behavior which is independent of shear rate. At shear rate region higher than a critical shear rate, however, they exhibit a shear-thinning behavior, demonstrating a decrease in steady flow viscosity with increasing shear rate. (2) As an increase in concentration and/or molecular weight, the zero-shear viscosity is increased while the Newtonian viscous region becomes narrower. Moreover, the critical shear rate at which the transition from the Newtonian to shear-thinning behavior occurs is decreased, and the shear-thinning nature becomes more remarkable. (3) Aqueous PEO solutions show a Newtonian viscous behavior at shear rate range lower than the inverse value of a characteristic time $1/{\lambda}_E$, while they exhibit a shear-thinning behavior at shear rate range higher than $1/{\lambda}_E$. For aqueous PEO solutions having a broad molecular weight distribution, the inverse value of a characteristic time is not quantitatively equivalent to the critical shear rate, but the power-law relationship holds between the two quantities. (4) The Cross, Carreau, and Carreau-Yasuda models are all applicable to describe the steady flow behavior of aqueous PEO solutions. Among these models, the Carreau-Yasuda model has the best validity.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.37-43
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• 2008

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.