References
- J. C. K. Lam, M. Y. M. Huang, T. H. Ng, M.K.B. Dawood, F. Zhang, A. Du, H. Sun, Z. Shen, and Z. Mai, Appl. Phys. Lett., 102, 022908 (2013). https://doi.org/10.1063/1.4776735
- S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, and M. Kawasaki1, Appl. Phys. Lett., 93, 123309 (2008). https://doi.org/10.1063/1.2989125
- H. Hosono, Journal of Non-Crystalline Solids, 35, 2851 (2006).
- S. W. Tsao, T. C. Chang, S. Y. Huang, M. C. Chen, S. C. Chen, C. T. Tsai, Y. J. Kuo, Y. C. Chen, and W. C. Wub, Solid-State Electronics 54, 1497 (2010). https://doi.org/10.1016/j.sse.2010.08.001
- K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett., 93, 192107 (2008). https://doi.org/10.1063/1.3020714
- D. Kot, T. Mchedlidze, G. Kissinger, and W. Von Ammonc, ECS Journal of Solid State Science and Technology, 2, P9 (2013)
- J. S. Park, W. J. Maeng, H. S. Kim, and J. S. Park, Thin Solid Films, 520, 1679 (2012). https://doi.org/10.1016/j.tsf.2011.07.018
- W. T. Chen, S. Y. Lo, S. C. Kao, H. W. Zan, C. C. Tsai, J. H. Lin, C. H. Fang, and C. C. Lee, IEEE Electron. Dev. Lett., 32, 1552 (2011). https://doi.org/10.1109/LED.2011.2165694
- C. C. Lo and T. E. Hsieh, Ceramics International, 38, 3977 (2012). https://doi.org/10.1016/j.ceramint.2012.01.052
- M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira, Appl. Phys. Lett., 95, 063502 (2009). https://doi.org/10.1063/1.3187532
- J. Maserjian and N. Zamani, Appl. Phys. Lett., 53, 559 (1982).
- J. G. Simmons, Phys. Rev., 155, 657 (1967). https://doi.org/10.1103/PhysRev.155.657
- O. Mitrofanov and M. Mantra, J. Appl. Phys., 95, 6414 (2004). https://doi.org/10.1063/1.1719264
- T. Oh, IEEE Trans. Nanotechnology, 5, 23 (2006) https://doi.org/10.1109/TNANO.2005.858591
- T. Oh and C. K. Choi, J. Korean Phys. Soc., 56, 1150 (2010) https://doi.org/10.3938/jkps.56.1150