• The Journal of Korean Academy of Prosthodontics
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• v.48 no.1
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• pp.8-15
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• 2010

Purpose: The purpose of this study was to evaluate the effect of various methods of dentin bonding agent application and air abrasion pretreatment on microtensile bond strength between dentin and resin, using a self-etching adhesive system. Material and methods: Thirty freshly extracted human molars were obtained and divided into 6 groups of 5 teeth. A 2-step self etching adhesive system (Clearfil SE Bond) was used for all groups. The control specimens were prepared using a direct immediate bonding technique. The delayed dentin sealing specimens were prepared using an indirect approach without dentin prebonding. The immediate dentin sealing specimens were prepared using dentin prebonding immediately following preparation. Immediate dentin sealing teeth and delayed dentin sealing teeth had provisional restorations using Fermit for two weeks. Then all specimens of each group were divided into two groups of three, depending on air abrasion pretreatment. Composite "crowns" were incrementally built on and specimens were stored in water for 24 hours. All teeth were prepared for a microtensile bond strength test. Bond strength data were analyzed with a one-way ANOVA test, and post hoc comparison was done using the Scheffe's test. Results: The mean microtensile bond strengths of all groups were not statistically different from each other. Conclusion: When preparing teeth for indirect restorations, IDS and DDS with Clearfil SE bond, have no difference on the microtensile bond strength between dentin and resin. Air abrasion pretreatment did not affect the microtensile bond strength when using IDS and DDS with Clearfil SE bond.

• The Journal of Korean Academy of Prosthodontics
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• v.61 no.3
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• pp.179-188
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• 2023

Purpose. The purpose of this study was to evaluate the effect of surface treatments on the shear bond strength of two types of zirconia (3-TZP and 5Y-PSZ) with resin cement. Materials and methods. Two different types of zirconia specimens with a fully sintered size of 14.0×14.0×2.0 mm³ were prepared, polished with 400, 600, and 800 grit silicon carbide paper, and buried in epoxy resin. They were classified into four groups each control, sandblasting, primer, and sandblasting & primer. Cylindrical resin adhered to the surface-treated zirconia with resin cement. It was stored in distilled water (37℃) for 24 hours, and a shear bond strength test was performed. The normality of the experimental group was confirmed with the Kolmogorov-Smirnov & Shapiro-Wilk test. The interaction and statistical difference were analyzed using a two-way ANOVA. A post-hoc analysis was performed using Dunnett T3. Results. As a result of two-way ANOVA, there was no significant difference in shear bonding strength between zirconia types (P > .05), but there was a significant correlation in the sandblasting, primer, and alumina sandblasting & primer group (P < .05). Dunnett T3 post-test showed that, regardless of the type of zirconia, shear bonding strength was sandblasting & primer > Primer > sandblasting > control group (P < .05). Conclusion. There was no difference in shear bond strength between the types of zirconia. The highest shear bond strength was shown when the mechanical and chemical treatments of the zirconia surface was performed simultaneously.

• Journal of Adhesion and Interface
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• v.13 no.3
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• pp.137-144
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• 2012

Chemical functionalization of carbon nanomaterials (CNMs) is generally carried out for increasing interfacial adhesion between filler and polymer matrix for CNM-polymer nanocomposites. The chemically functionalized CNTs can produce strong interfacial bonds with many polymers, allowing CNT based nanocomposites to possess high mechanical and functional properties. Hence, increased surface adhesion can be measured indirectly by observing increased mechanical properties. However, there is a more direct way to observe interfacial bonds between polymer and CNM by measuring piezoresistivity behavior so that we can imagine the behavior of CNM particles in polymer matrix under deflection. Fuctionalization of MWCNT and rGO was carried out by oxidization reaction of MWCNT and rGO with $H_2SO_4/HNO_3$ solution. Electrical resistivities of MWCNT-PMMA and rGO-PMMA composites were decreased after functionalization because of the destructive fuctionalization process. Meanwhile, piezoresistivities of functionalized CNM-PMMA composites showed more sensitive behavior under the same deflection as compared to pristine CNM-PMMA composites. Therefore, mobility of CNM in polymer matrix was found to be improved with chemical functionalization.

• Journal of the Korean Chemical Society
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• v.46 no.3
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• pp.179-186
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• 2002

A molecular orbital analysis based on the extended Huckel calculations has been carried out to study the OH bond activation of water on the $TiO_2$(110) surface. $H_2O$ binds with its axis perpendicular to the surfac on top of the five-coordinate $Ti^{4+}$ atom via its $3a_1$ orbital. In this bonding situation, the two-coordinated bridging $O^{2-}$ atom ($O_b$, basic site) on $TiO_2$(110) is too distant from an H atom of water to form hydrogen-bondig interactions with water that facilitate O-H bond cleavage. It has been elucidated that the O-H bond is appreciably weakened when the water molecule is tilted to give a hydrogen bond with the $O_b$ atom. This mechanism includes mutual transfer of electron density from the $3a_1$ orbital of the water molecule to the $Ti^{4+} 3d_{z2}$ orbital and from the $O_b$ P orbitals to the $2b_1$ of the adsorbed water molecule This should result in lengthening of the O-H bond in the surface complex and the subsequent dissociation into the fragments OH and H.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.1-24.1
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• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Journal of dental hygiene science
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• v.14 no.2
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• pp.140-149
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• 2014

The purpose of this study was to investigate the influence of etching surface treatment and aging treatment of zirconia on the shear bond strength between zirconia core and veneered ceramic. Four groups of zirconia-ceramic specimens were prepared; 1) NEZ group (no etching zirconia), 2) EZ group (etching zirconia), 3) ANEZ group (aging and no etching zirconia), 4) AEZ group (aging and etching zirconia). The shear bond strength between zirconia and porcelain was measured using Instron Universal Testing Machine. Surface texture with crystalline structure of zirconia surface was examined by the field emission scanning electron microscopy (FE-SEM) with ingredient analysis. The fractured surfaces of specimens were examined to determine the failure pattern by a digital microscope. The mean${\pm}$standard deviation of shear bond strengths were $23.47{\pm}3.47$ Mpa in NEZ, $28.30{\pm}4.34$ Mpa in EZ, $21.85{\pm}4.65$ Mpa in ANEZ, $24.65{\pm}3.65$ Mpa in AEZ group, respectively, and were significantly different (p<0.05). The average shear bond strength was largest in EZ group, followed by AEZ, NEZ, and ANEZ groups. Most specimens in NEZ group showed adhesive failure and most specimens in EZ, AEZ, and ANEZ group showed mixed failure. Surface of etching treatment group (EZ and AEZ) showed complex micro-structure and irregular surface texture which may facilitate mechanical interlocking, while untreated zirconia surface presented simpler micro-structure. In conclusion, an etching treatment improved bonding strength between zirconia and porcelain by forming mechanical interlocking.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of the Korean institute of surface engineering
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• v.42 no.1
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• pp.8-12
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• 2009

Electronic structures and chemical bonding of Li-intercalated $LiTiS_2$ and $LiTiO_2$ were investigated by using discrete variational $X{\alpha}$ method as a first-principles molecular-orbital method. ${\alpha}-NaFeO_2$ structure is the equilibrium structure for $LiCoO_2$, which is widely used as a commercial cathode material for lithium secondary battery. The study especially focused on the charge state of Li ions and the magnitude of covalency around Li ions. The average voltage of lithium intercalation was calculated using pseudopotential method and the average intercalation voltage of $LiTiO_2$ was higher than that of $LiTiS_2$. It can be explained by the differences in Mulliken charge of lithium and the bond overlap population between the intercalated Li ions and anions in $LiTiO_2$ as well as $LiTiS_2$. The Mulliken charge, which means the ionicity of Li atom, was approximately 0.12 in $LiTiS_2$ and the bond overlap population (BOP) indicating the covalency between Ti and S was about 0.339. One the other hands, the Mulliken charge of lithium was about 0.79, which means that Li is fully ionized. The BOP, the covalency between Ti and O, was 0.181 in $LiTiO_2$. Because of high ionicity of Li and the weak covalency between Ti and the nearest anion, $LiTiO_2$ has a higher intercalation voltage than that of $LiTiS_2$.

• Journal of Conservation Science
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• v.28 no.2
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• pp.175-184
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• 2012

A purpose of this research is to find out characteristic of bronze artifacts and gold ornaments excavated from Xiongnu tombs No. 2~4 at Duurlig Nars in Mongolia through scientific analysis of them. The Tombs are comparatively small. There were still lots of relics remaining although the tombs had been already robbed. Also the tombs are evaluated important since the origin of them show coexisting of chinese and northern style. First of all, an analysis result about bronze vessels found in this site, they have high lead(Pb) content and relatively low tin(Sn) content, as compared with the Bronze Han Mirror and End-fittings of Bronze Parasol Rib. Especially in case of bronze tray and bronze lamp from the no. 2 tomb and also bronze cauldron from the no. 4 tomb contain only 1wt% of tin which means binary alloy composition(Cu-Pb). Also, in the case of gold ornaments found in the no. 2 tomb, they have comparatively high purity. And the research suppose that the high possibility of that they were used soldering using alloy of Au-Cu or diffused bonding(using malachite and copper oxide) for joining gold grains of gold granulation ornament. Further scientific research and analysis in Mongolia and other countries will provide more clues to solve mystery of Xiongnu culture.