• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.435-438
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• 2001

Thin films of vanadium oxide(VO$\sub$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\sub$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and bonding properties of films sputter-deposited under different oxygen gas pressures are characterized through XRO, XPS, RBS and FTIR measurements. All the films prepared below 8% O$_2$ are amorphous, and those prepared without oxygen are gray indicating the presence of V$_2$O$\sub$$_4$/ phase in the films. V$_2$O$\sub$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\sub$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms. located on the V-O plane of V$_2$O$\sub$5/ layer participate more readily in the oxidation process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• Journal of Powder Materials
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• v.24 no.2
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• pp.96-101
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• 2017

Well-dispersed platinum catalysts on ruthenium oxide nanofiber supports are fabricated using electrospinning, post-calcination, and reduction methods. To obtain the well-dispersed platinum catalysts, the surface of the nanofiber supports is modified using post-calcination. The structures, morphologies, crystal structures, chemical bonding energies, and electrochemical performance of the catalysts are investigated. The optimized catalysts show well-dispersed platinum nanoparticles (1-2 nm) on the nanofiber supports as well as a uniform network structure. In particular, the well-dispersed platinum catalysts on the ruthenium oxide nanofiber supports display excellent catalytic activity for oxygen reduction reactions with a half-wave potential ($E_{1/2}$) of 0.57 V and outstanding long-term stability after 2000 cycles, resulting in a lower $E_{1/2}$ potential degradation of 19 mV. The enhanced electrochemical performance for oxygen reduction reactions results from the well-dispersed platinum catalysts and unique nanofiber supports.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.56-61
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• 1999

Highly conductive oxide films of BaRuO$_3$ have been grown heteroepitaxially on (100) LaAlO$_3$ single crystalline substrates by using pulsed laser deposition. The films are c-axis oriented with an in-plane epitaxial relationship of <010><100>BaRuO$_3$ // <110>LaAlO$_3$. Atomic force microscopy (AFM) observation shows that they consist of a fine-arranged network of grains and have a mosaic microstructure. Generally temperature-dependent resistivity shows the transition from metallic curve to semiconductor-metallic twofold curve by the deposition conditions for Ru oxide based materials like SrRuO$_3$, CaRuO$_3$, BaRuO$_3$, etc.. This twofold curve comes from the structural similarity of Ru oxide based materials including BaRuO$_3$. We find that the distance of Ru-Ru bonding in the unit cell of BaRuO$_3$ as well as the grain boundary scattering could be the two important causes of these interesting conductive properties.

• Structural Engineering and Mechanics
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• v.84 no.6
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• pp.823-829
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• 2022

This study considered the experimental parameters (Nano-graphene oxide reinforced polycarbonate, GFRP) under low-velocity impact load and vibration analysis. The effect of nano-graphene oxide (NGO) on a polycarbonate-based composite was studied. Two test procedures were adopted to obtain experimental results, vibration analysis. The mechanical tests were performed on damaged and non-damaged specimens to determine the damaging effect on the composite specimens. After the test was carried out, the effect of NGO was measured and damping factors were ascertained experimentally. 0. 2 wt% NGO was determined as the optimum amount that best affected the Vibration Analysis. The experiments revealed that the composite's damping properties were increased by adding the nanoparticles to 0.25 wt% and decreased slightly for the specimens with the highest nanoparticles content. Cyclic sinus loading was applied at a frequency of 3.5 Hz. This paper study the frequency effect of 3.5khz frequency damage on mechanical results. Found that high frequency will worthlessly affect the fatigue life in NGO/polycarbonate composite. In 3.5 Hz frequency, it was chosen to decrease the heat by frequency. Transmission electron microscopy (TEM) micrographs were used to investigate the distribution of NGO on the polycarbonate matrix and revealed a homogeneous mixture of nano-composites and strong bonding between NGO and the polycarbonate which increased the damping properties and decreased vibration. Finally, experimental modal analysis was conducted after the high-velocity impact damage process to investigate the defect on the NGO polycarbonate composites.

• The Journal of the Korean dental association
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• v.56 no.3
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• pp.159-166
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• 2018

The zirconia-reinforced lithium silicate ceramic material is a material in which lithium silicate glass contains about 10% by weight of zirconia oxide (zirconia oxide). This material has both the advantages of glass ceramics and zirconia, and it is attracting attention as a CADCAM material for single tooth restoration. ZLS materials have improved strength compared to widely used e.max (lithium disilicate ceramic) materials. It can be used for single crown restoration and ensuring a thickness of 1.5 mm is very important for reliable treatment. In the case of Celtra Duo, heat treatment may be helpful in terms of strength and abrasion resistance. Hydrofluoric acid treatment is helpful for bonding and hydrofluoric acid for a short time may not help to improve the bonding strength. Although zirconia-reinforced lithium silicate ceramic materials have been continuously conducted and published in the laboratory, reliable clinical studies are still lacking. Additional clinical studies will be a very important part of establishing a scientific basis.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.95-101
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• 1997

Using aluminum powder with average particle size of 22.1 $\mu$m, aluminum compact made by Pressureless Powder Packing Method showed 52% green density. The activation energy of aluminum oxidation was cal-culated from the weight change of TG, and it was varied in the range of 16~64 kJ/mol. It was found from the variation of the activation energy and the observation of the microstructure that oxidation was de-pendent on the destruction of oxide film and the melt-out of aluminum. Aluminum compact was reaction-bonded at 1000~140$0^{\circ}C$ for 4~60hrs, and oxidation was dependent on temperature rather than time. Reac-tion-bonded aluminum oxide at 140$0^{\circ}C$ for 60hrs showed 92% oxidation percent. It was sintered at 1$600^{\circ}C$ for 15hrs and the sintered body showed 62% relative density.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.15-23
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• 2002

In this study, metal/ZnO contacts were thermally annealed at different temperatures (as-dep., 400$^{\circ}C$, 600$^{\circ}C$, 800$^{\circ}C$, 1000$^{\circ}C$) for the investigation of electrical properties, and surface and interface characteristics. The analysis of the element composition and the chemical bonding state of the surface was made by the XPS(X-ray photoelectron spectroscopy). An attempt was made to establish the electrical property-microstructure relationship for the (Ti, Au)/ZnO. The Ti/ZnO contact exhibits an ohmic characteristics with a relatively high contact resistance of 4.74${\times}$10$\^$-1/ $\Omega$$\textrm{cm}^2$ after an annealing at 400$^{\circ}C$. The contact showed a schottky characteristics when the samples were annealed at higher temperature than 400$^{\circ}C$. The transition from the ohmic to schottky characteristics was contributed from the formation of the oxide layers as was confirmed by the peaks for O-O and Ti-O bondings in XPS analysis. For the Au/ZnO contact the lowest contact resistance was obtained from the as-deposited sample. The resistance was slowly increased with annealing temperature up to 600$^{\circ}C$. The ohmic characteristics were maintained eden fort 600$^{\circ}C$ annealing. The XPS analysis showed that the Au-O intensity was dramatically decreased with temperature above 600$^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.39-45
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• 2012

Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.31-37
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• 2009

Cu-Cu thermo-compression bonding process was successfully developed as functions of the $N_2+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the quantitative interfacial adhesion energy was measured by 4-point bending test. While the pre-annealing with $N_2+H_2$ gas below $200^{\circ}C$ is not effective to improve the interfacial adhesion energy at bonding temperature of $300^{\circ}C$, the interfacial adhesion energy increased over 3 times due to post-annealing over $250^{\circ}C$ after bonding at $300^{\circ}C$, which is ascribed to the effective removal of native surface oxide after post-annealing treatment.