• 센서학회지
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• 제29권4호
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• 한국진공학회지
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• 제18권1호
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• pp.73-78
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• 2009

본 연구에서는 metal oxide chemical vapor deposition (MOCVD)을 이용하여 p형 실리콘(100) 기판 위에 30 nm 두께의 산화 아연 완충층을 $500^{\circ}C$ 에서 증착 시킨 후, 그 위에 산화 아연 나노로드를 수열합성법을 이용하여 성장시켰다. 그리고 산화아연 나노로드 성장 시 0.02몰${\sim}$0.5몰의 다양한 농도의 전구체를 사용함으로써 그에 따라 변화되는 산화 아연 나노로드의 배열상태, 구조적, 그리고 광학적 특성 평가를 실시하였다. 특성 평가는 FE-SEM(field emission scanning electron microscopy), XRD(X-ray diffraction), 그리고 PL(photoluminescence) 등의 분석 방법들을 통해 이루어졌다 본 연구를 통하여 전구체의 농도가 증가할수록 나노로드의 직경과 길이가 길어지며 0.3몰의 농도에서 뛰어난 광학 특성이 나타나는 것을 발견할 수 있었다.

• Carbon letters
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• 제25권
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• pp.14-24
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• 2018

Electrochemical properties and performance of composites performed by incorporating metal oxide or metal hydroxide on carbon materials based on graphene and carbon nanotube (CNT) were analyzed. From the surface analysis by field emission scanning electron microscopy and field emission transmission electron microscopy, it was confirmed that graphene, CNT and metal materials are well dispersed in the ternary composites. In addition, structural and elemental analyses of the composite were conducted. The electrochemical characteristics of the ternary composites were analyzed by cyclic voltammetry, galvanostatic charge-discharge tests, and electrochemical impedance spectroscopy in 6 M KOH, or $1M\;Na_2SO_4$ electrolyte solution. The highest specific capacitance was $1622F\;g^{-1}$ obtained for NiCo-containing graphene with NiCo ratio of 2 to 1 (GNiCo 2:1) and the GNS/single-walled carbon $nanotubes/Ni(OH)_2$ (20 wt%) composite had the maximum specific capacitance of $1149F\;g^{-1}$. The specific capacitance and rate-capability of the $CNT/MnO_2/reduced$ graphene oxide (RGO) composites were improved as compared to the $MnO_2/RGO$ composites without CNTs. The $MnO_2/RGO$ composite containing 20 wt% CNT with reference to RGO exhibited the best specific capacitance of $208.9F\;g^{-1}$ at a current density of $0.5A\;g^{-1}$ and 77.2% capacitance retention at a current density of $10A\;g^{-1}$.

• 한국재료학회지
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• 제14권6호
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• pp.420-424
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• 2004

The microstructure and electrical properties of $ZnO-Pr_{6}$$O_{11}$ $-CoO-Y_2$$O_3$-based varistors were investigated with and without various metal oxide additives (NiO, MgO, and $Cr_2$$O_3$). The addition of NiO promoted the grain growth while that of Cr$_2$O$_3$ decreased average grain size. Thereby, the varistor voltage was higher in $Cr_2$$O_3$-added composition. Among $ZnO-Pr_{6}$ $O_{11}$ /$-CoO-Y_2$$O_3$-based varistors, the$ Cr_2$$O_3$-added varistor exhibited the highest nonlinear exponent (51.2), the lowest leakage current (1.3 $\mu$A), and the lowest dielectric dissipation factor (0.0433).

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.210-216
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• 1997

The th ermal and optical properties of multicomponent oxide glass optical fiber by adding heavy metal oxide Ga$_{2}$O$_{3}$(0-20wt%) were investigated. The fiber samples were made by the method of rod in tube. The optical loss of fiber was measured in 0.3-1.8.mu.m wavelength region. As Ga$_{2}$O$_{3}$ increased up to 20wt%, the transition and softening temperature of bulk glass were increased from 495.deg. C to 579.deg. C and from 548.deg. C to 641.deg. C, respectively. Whereas the thermal expansion coefficient was decreased from 102 to 79.1x10$^{-7}$ /.deg. C. The refractive index was increased from 1.621 to 1.665, and IR cut-off wavelength was enlarged from 4.64.mu.m to 6.1.mu.m. The optical loss of fiber was remarkably decreased in 1.146.mu.m-1.8.mu.m wavelength region.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.335-340
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• 2018

Transition metal oxide materials have attracted widespread attention as Li-ion battery electrode materials owing to their high theoretical capacity and good Li storage capability, in addition to various nanostructured materials. Here, we fabricated a CoO Li-ion battery in which Co nanoparticles (NPs) are deposited into a current collector through electrophoretic deposition (EPD) without binding and conductive agents, enabling us to focus on the intrinsic electrochemical properties of CoO during the conversion reaction. Through optimized Co NP synthesis and electrophoretic deposition (EPD), CoO Li-ion battery with 630 mAh/g was fabricated with high cycle stability, which can potentially be used as a test platform for a fundamental understanding of conversion reaction.

• Journal of Electrochemical Science and Technology
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• 제9권2호
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• pp.93-98
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• 2018

$MnO_2$, a metal oxide used as an electrode material in electrochemical capacitors (EDLCs), has been applied in binary oxide and conducting polymer hybrid electrodes to increase their stability and capacitance. We developed a method for electrodepositing Mn-Ni oxide/PANI, Mn-Ni oxide/PEDOT, and Mn-Ni-Ru oxide/PEDOT films on carbon paper in a single step using a mixed bath. Mn-Ni oxide/PEDOT and Mn-Ni-Ru oxide/PEDOT electrodes used in an electro-osmotic pump (EOP) have shown better efficiency compared to Mn-Ni oxide and Mn-Ni oxide/PANI electrodes through testing in water as a pumping solution. EOP using a Mn-Ni-Ru oxide/PEDOT electrode was also tested in a 0.5 mM $Li_2SO_4$ solution as a pumping solution to confirm the effect of the $Li^+$ insertion/de-insertion reaction of Ruthenium oxide on the EOP. Experimental results show that the flow rate increases with the increase in current in a 0.5 mM $Li_2SO_4$ solution compared to that obtained when water was used as a pumping solution.

• 한국재료학회지
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• 제2권3호
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• pp.228-238
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• 1992

서브마이크론 설계규칙을 갖는 소자의 이층 배선 공정에서 다챔버 장비를 이용한 금속 층간절연막의 공극없는 평탄화를 위하여 PECVD와 $O_3$ ThCVD산화막의 증착시 층덮힘성을 연구하였다. 산화막의 두께가 증가됨에 따라 변화되는 순간단차비의 개념을 도입하여 공극형성의 개시점을 예측할 수 있는 관계식을 모델링하였고, 금속배선간격의 초기 단차비가 다양한 패턴에서 산화막의 두께에 따른 순간 단차비의 변화를 조사하였다. 모델링 검정결과 $5^{\circ}$이하의 re-entrant각을 갖는 TEOS에 의한 PECVO 산화막의 순간단차비가 모델링에 잘 일치하였다. 공극없는 평탄화는 제1층의 PECVD 산화막의 순간 단차비를 0.8이하로 유지하거나 Ar sputter식각을 통하여 산화막의 모서리에 경사를 준후 층덮힘성이 우수한 $O_3$ ThCVD산화막을 증착함으로써 가능하였다. $O_3$ ThCVD산화막의 etchback이 non etchback공정에 비하여 via접쪽저항체인에서 높은 수율을 보였으며, via접촉저항은 $0.1~0.3{\Omega}/{\mu}m^2$로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.