Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Characteristic of MOS structure using $HfO_{2}$ as high-k gate dielectric film

$HfO_{2}$를 이용한 MOS 구조의 제작 및 특성

  • Park, C.I. (Dept. of Micro Engineering, Korea Univ.) ;
  • Youm, M.S. (Dept. of Electric Engineering, Korea Univ.) ;
  • Park, J.W. (Dept. of Electric Engineering, Korea Univ.) ;
  • Kim, J.W. (Dept. of Electric Engineering, Korea Univ.) ;
  • Sung, M.Y. (Dept. of Electric Engineering, Korea Univ.)
  • 박천일 (고려대학교 미세소자공학 협동과정) ;
  • 염민수 (고려대학교 전기공학과) ;
  • 박전웅 (고려대학교 전기공학과) ;
  • 김재욱 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과)
  • Published : 2002.11.07
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Abstract

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

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