• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1270-1272
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• 2007

Analytic equations are derived from physical quantities in the gate-source overlap region and the concept of effective gate-source overlap length is proposed. The effective overlap length can be affected by gate voltage, insulator thickness and semiconductor thickness, and the overlap length should be larger than the length to obtain maximum driving current.

• Journal of Welding and Joining
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• v.34 no.6
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• pp.69-74
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• 2016

Because the pure titanium has superior corrosion resistance and formability compared with different material, it is widely used as material of welded heat exchanger. When the welding of heat exchanger is carried out, certain area in which welding start and end are overlapped occurs. The humping of back bead is formed in the overlap area due to partial penetration. Thus in this study, the experiments were carried out by changing the length and wave shape of overlap area, and then the weldabiliay was evaluated through the observation of microstructure, the measurement of hardness and tensile-shear strength test in the overlap area. When overlap length was 9.8mm, humping bead was suppressed. The microstructure of overlap area coarsened and its hardness increased due to remelting. As a result of tensile-shear strength test in the overlap area according to applying the wave shape control, it was confirmed that the overlap area applied wave shape control had more excellent yield strength and ductility.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.769-772
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• 2014

The device reliability in amorphous InGaZnO under NBS(Negative Bias Stress) and hot carrier stress with different gate overlap has been characterized. Amorphous InGaZnO thin film transistor has been measured. and is channel $width=104{\mu}m$, $length=10{\mu}m$ with gate overlap $length=0,1,2,3{\mu}m$. The device reliability has been analyzed by I-V characteristics. From the experiment results, threshold voltage variation has been increased with increasing of the gate overlap length after hot carrier stress. Also, threshold voltage variation has been decreased and Hump Effect has been observed later with increasing of the gate overlap length after NBS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.667-674
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• 2005

In this paper the gate overlap length of the LDMOST is optimized for obtaining longer device lifetime. The LDMOSI device with drift region is fabricated using the $0.25\;{\mu}m$ CMOS Process. The gate overlap lengths on drift region are $0.1\;{\mu}m,\;0.4\;{\mu}m\;0.8\;{\mu}m\;and\;1.1\;{\mu}m$, respectively. The breakdown voltages, on-resistances and hot-carrier degradations of the fabricated LDMOST devices are characterized. The LDMOST device with gate overlap length of $0.4\;{\mu}m$ showed the longest on-resistance lifetime, 0.02 years and breakdown voltage of 22 V and on-resistance of $23\;m\Omega{\cdot}mm^2$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.33-39
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• 1997

The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.1-8
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• 2002

C- V method is a means to determine the effective channel length for miniaturized MOSFET's. This method achieves L$_{eff}$ by extracting a unique channel length independent extrinsic overlap length($\Delta$L) at a critical gate bias point. In this paper, we conducted an experiment on two different C-V methods. L$_{eff}$ extracted from experiment is compared with L$_{eff}$ simulated from a two-dimensional (2-D) device simulator, and the accuracy of C-V method for L$_{eff}$ extraction is analyzed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.62-66
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• 2011

In this study, a new RF method to extract the drain-source voltage Vds-dependent gate-bulk capacitance of deep-submicron MOSFETs is developed by determining Vds-independent gate-source overlap capacitance using measured S-parameters. The accuracy of extraction method is verified by observing good agreements between the measured and modeled S-parameters. The lateral channel doping profile in the drain region is experimentally measured using a Vds-dependent curve of the overlap and depletion length obtained from the extracted data.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.26 no.5
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• pp.47-56
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• 2023

The Quercus variabilis and Quercus dentata, which are said to be relatively drought tolerant among the important genus Quercus that represent deciduous broad-leaved forests in Korea. These two species are widely distributed worldwide in Korea, Japan and China (northern, central, western and eastern subtropical regions). This study compared the ecological niche breadth and overlap according to growth response in 4 soil moisture gradients for the two species and tried to reveal degree of competition and ecological niche characteristics. The ecological niche breadth was 0.977±0.020 for Q. variabilis and 0.979±0.014 for Q. dentata, the latter being slightly wider. And they were similar in 5 traits (stem length, leaf lamina length, leaf width length, stem weight, leaf petiole weight), Q. variabilis was more dominant in 4 traits (leaves number, stem diameter, leaf area, leaf petiole length), and Q. dentata was more dominant in 7 traits (root length, shoot length, plant weight, root weight, shoot weight, leaf weight, leaf petiole weight). The ecological niche overlap for soil moisture between the two species overlapped most in plant structure-related traits and least in photosynthetic organ-related traits such as petiole length. As a result of principal component analysis, degree of competition between the two species for soil moisture was more severe when the soil moisture condition was low than high. Among the measured traits that affect the two-dimensional distribution, 8 traits (Leaves number, Shoot length, Stem length, Plant weight, Root weight, Shoot weight, Stem weight, Leaves weight) were correlated with the factor 1, and 2 traits (Leaf width length, Leaf petiole weight) were correlated with the factor 2 (r>0.5). These results show that the ecological response of the two species to soil moisture is not a few traits involved, but several traits are involved simultaneously.

• Journal of Adhesion and Interface
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• v.7 no.4
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• pp.1-9
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• 2006

The single lap joint is the most studied joint in the literature in terms of both theory and practice. It is easy to manufacture and the lap shear strength is a useful value for strength assessment and quality control. Simple design rules exist such as the one present in standard ASTM 1002 or in a recent paper by Adams and Davies. The main factors that have an influence on the lap shear strength are the type of adhesive, i.e. ductile or brittle, the adherend yield strength and the overlap length. The overlap increases the shear strength almost linearly if the adhesive is sufficiently ductile and the adherend does not yield. For substrates that yield, a plateau is reached for a certain value of overlap corresponding to the yielding of the adherend. For intermediate or brittle adhesives, the analysis is more complex and needs further investigation. In order to quantify the influence of the adhesive, the adherend and the overlap on the lap shear strength, the experimental design technique of Taguchi was used. An experimental matrix of 27 tests was designed and each test was repeated three times. The influence of each variable could be assessed as well as the interactions between them using the statistical software Statview. The results show that the most important variable on the lap shear strength is the overlap length followed by the type of adherend.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.6
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• pp.975-980
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• 2017

Overhead catenary system of electric railway has overlap sections which devide and tighten trolley wire supplying electric power to train, where current collection performances may become worse according to railway speed-up. Current collection tests conducted at 400 km/h test-bed section of Honam high-speed railway show that balanced line arrangement at overlap section is needed to secure current collection without arc generation between trolley wire and train current collection device. This paper proposes a design procedure of the overlap section to allow for tension increase and uplift of the trolley wires according to railway speed-up. By applying the proposed procedure to the overhead catenary system of Honam high-speed railway, it is suggested that the minimum span length should be 33.2 m for railway speed-up to 350 km/h and 43.7 m for speed-up to 400 km/h.