• Journal of Korean Academy of Fundamentals of Nursing
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• v.1 no.1
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• pp.77-97
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• 1994

The circadian system represents a temporal order which is mediated by the mutual coupling of oscillators and by the synchronizing effects of zeitgebers. It is known that well-being of man depends partly on the maintenance of this order, and that repeated or long lasting disturbances to it such as shift work will Cause harmful effects. This study was a quasi-experimental study to test the effect of shift directions for the clinical nurses on the circadian rhythm. Fourteen nurses working at the general units of Y hospital were selected according to the established criteria. Fourteen subjects were assigned to a weekly shift but the directions of shift work were phase delay first and then phase advance or vice versa. Oral temperature, total sleeping time, frequency of sleep-wake cycle, fatigue, mental performance, and physical symptom were measured during these days except holidays. The data collection period was from April 26, 1993 to July 3, 1993. MANOVA and Wilcoxon signed rank test were used for statistical analysis. The results are summarized as follows. 1. Having worked on evening and night shifts in either phase delay or phase advance schedules, temperature rhythms of shift workers were gradually adapted to the new sleep-wake cycles. A complete adaptation to work on the night shift was achieved the sixth day of the night shift in the phase delay schedule compared to the partial adaptation to the work on the night shift in the phase advance schedule. Accordingly, by putting evening shift between day and night shifts, it will be possible for circadian rhythm to adapt easily to the night shift. 2. There were differences in the total sleeping time, frequency of steep-wake cycle, fatigue, and physical symptom except for mental performance between night shift and day, evening shift. This indicates further that shift workers working on the night shift have a hard time adapting to the shift work compared to the other shifts. 3. Evaluating all the acrophases of temperature rhythm either in phase delay or phase ad-vance schedules, it was shown that night to evening shift in the phase ad-vance schedule revealed the smallest phase move. Also phase advance schedule showed poorer adaptation to shift work than phase delay schedule in connection with total sleeping time, frequency of sleep-wake cycle, fatigue, mental performance, and physical symptom. It is suggested, taken together, these findings reflect that phase delay schedule facilitated the degree of adjustment to the shift work compared to the phase advance schedule.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.10
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• pp.33-46
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• 2015

In this paper, we predicts the analog and digital circuit performance of FinFETs that are scaled down following the ITRS(International technology roadmap for semiconductors). For accurate prediction of the circuit performance of scaled down devices, accurate parasitic resistance and capacitance analytical models are developed and their accuracies are within 2 % compared to 3D TCAD simulation results. The parasitic capacitance models are developed using conformal mapping, and the parasitic resistance models are enhanced to include the fin extension length($L_{ext}$) with respect to the default parasitic resistance model of BSIM-CMG. A new algorithm is developed to fit the DC characteristics of BSIM-CMG to the reference DC data. The proposed capacitance and resistance models are implemented inside BSIM-CMG to replace the default parasitic model, and SPICE simulations are performed to predict circuit performances such as $f_T$, $f_{MAX}$, ring oscillators and common source amplifier. Using the proposed parasitic capacitance and resistance model, the device and circuit performances are quantitatively predicted down to 5 nm FinFET transistors. As the FinFET technology scales, due to the improvement in both DC characteristics and the parasitic elements, the circuit performance will improve.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.47 no.2
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• pp.25-34
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• 2010

This paper proposed a high-speed voltage-controlled ring-oscillator(VCRO) using a frequency doubling technique. The design of the proposed oscillator has been based on TSMC 0.18um 1.8V CMOS technology. The frequency doubling technique is achieved by AND-OR operations with 4 signals which have $90^{\circ}$ phase difference one another in one cycle. The proposed technique has been implemented using a 4-stage differential oscillator compose of differential latched inverters and NAND gates for AND and OR operations. The differential ring-oscillator can generate 4 output signals, which are $90^{\circ}$ out-of-phase one another, with low phase noise. The ANP-OR operations needed in the proposed technique are implemented using NAND gates, which is more area-efficient and provides faster switching speed than using NOR gates. Simulation results show that the proposed, VCRO operates in the frequency range of 3.72 GHz to 8 GHz with power consumption of 4.7mW at 4GHz and phase noise of ~-86.79dBc/Hz at 1MHz offset. Therefore, the proposed oscillator demonstrates superior performance compared with previous high-speed voltage-controlled ring-oscillators and can be used to build high-performance frequency synthesizers and phase-locked loops for radio-frequency applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.613-624
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated and compared. So we have explained that the output power and phase noise properties of the Push-push FET DRO are depending on return loss and isolation characteristics of power combiner at the fundamental and the second harmonic frequencies. A Push-push oscillator for suppressing the fundamental frequency of 10 GHz and enhancing the second harmonic of 20 GHz has been designed and fabricated in microstrip configuration on 20 mil thick RT-Duroid($\varepsilon$$_{r}$ = 2.52) Teflon substrate. Return loss and isolation characteristics of T-junction and Wilkinson have been measured at the fundamental frequency of 10.2 GHz and the second harmonic frequency of 20.5 GHz. At the fundamental frequency, -12 dB return loss and -3.7 dB isolation have been measured for the T-junction power combiner, and -14 dB return loss and -11 dB isolation fur the Wilkinson power combiner. At the second harmonic frequency, -10 dB return loss and -7.5 dB isolation have been obtained for the T-junction power combiner, and -23 dB return loss and -22 dB isolation for the Wilkinson power combiner. As a result, we have confirmed that the oscillator based on the Wilkinson power combiner with better retrun loss and isolation characteristics produces more output power and better phase noise characteristics..

• The Journal of the Acoustical Society of Korea
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• v.16 no.2
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• pp.89-94
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• 1997

A new type SO$_2$ gas sensor with a particular inorganic thin film on SAW devices was developed. The sensor consisted of twin SAW oscillators of the center frequency of 54 MHz fabricated on the LiTaO$_3$ piezoelectric single crystal. One delay line of the sensor was coated with a CdS thin film that selectively adsorbed and desorbed SO$_2$, while the other was uncoated for use as a stable reference. Deposition of the CdS thin film was carried out by the spray pyrolysis method using an ultrasonic nozzle. The sensor could measure the concentration in air less than 0.25 parts per million of SO$_2$. Stability of the sensor turned out to be as good as less than 20ppm, recovery time after each measurement was as short as 5 minutes. Repeatability of the measurement was confirmed through so many reiterated experiments. Hence, the SAW sensor developed through this work showed promising performance as a microsensing tool of SO$_2$. Further work required to improve the performance of the sensor includes enhancement of the reactivity of the CdS thin film with SO$_2$ through appropriate dopant addition, an increase of the center frequency of the SAW device.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.11 s.114
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• pp.1112-1119
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• 2006

In this paper, mutually coupled oscillator is employed to improve phase noise. Mutually coupled structure oscillator couples two oscillator's phase shifted output signals, that is fabricated using teflon board which has dielectric constant of 2.5 and Surface Mount Gallium Arsenide FET devices. And this paper proposed the structure to bias adjustment for the phase condition of mutually couples. When one oscillator has bias point of 4.4 V and 37 mA, it's output signal has phase noise characteristic of -96.37 dBc(@9305 MHz, offset frequency 100 KHz), -73.46 dBc(10 kHz). and After it's output signal mutually coupled the other's output signal that has bias point of 8.1 V and 69 mA, it has superior phase noise characteristic of -106.7 dBc(@9305 MHz, offset frequency 100 kHz), -81 dBc(10 kHz).

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1362-1369
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• 2018

A method aimed at improving the beam-wave interaction efficiency by changing the coupling slot configuration has been proposed in the study of extended interaction oscillators (EIOs). The dispersion characteristics, coupling coefficient and interaction impedance of the high-frequency structure based on different types of coupling slots have been investigated. Four types of coupled cavity structures with different layouts of the coupling slots have been compared to improve the beam-wave interaction efficiency, so as to analyze the beam-wave interaction and practical applications. In order to determine the improvement of the coupling slot to a coupled cavity circuit in an EIO, we designed four nine-gap EIOs based on the coupled cavity structure with different coupling slot configurations. With different operating frequencies and voltages takes into consideration, beam voltages from 27 to 33 kV have been simulated to achieve the best beam-wave interaction efficiency so that the EIOs are able to work in the $2{\pi}$ mode. The influence of the Rb and the ds on the output power is also taken into consideration. The Rb is the radius of the electron beam, and the ds is the width of the coupling slot. The simulation results indicate that a single-slot-type EIO has the best beam-wave interaction efficiency. Its maximum output power is 2.8 kW and the efficiency is 18% when the operating voltage is 31 kV and electric current is 0.5 A. The output powers of these four EIOs that were designed for comparison are not less than 1.7 kW. The improved coupling-slot configurations enables the extended interaction oscillator to meet the different engineering requirements better.