• 제목/요약/키워드: Oscillators

검색결과 267건 처리시간 0.027초

다수의 진동체로 구성된 부 구조물에 의한 감쇠 효과 (Dissipation Effects Induced by Substructures Comprised of Multiple oscillators)

  • 최성훈;김양한
    • 한국소음진동공학회논문집
    • /
    • 제12권6호
    • /
    • pp.445-452
    • /
    • 2002
  • The goal of this paper Is to characterize the vibration damping induced in a main structure by a large number of sub-oscillators. A simple expression is obtained for the substructure impedance when the number of sub-oscillators approaches Infinity. It is found that the induced damping depends on the total mass of the sub-oscillators resonating in a frequency band of interests and nearly independent of their Individual loss factors. A modal overlapping condition. which corresponds to bandwidths that exceed the spacing of those natural frequencies, is required for the sub-oscillators to have such effects. An impulse response of the system is also considered. When the sub-oscillators lack damping and do not satisfy the modal overlapping condition, the vibratory energy is returned from the sub-oscillators to the main structure at later times. The result of this paper is consistent with that found with the fuzzy structure and SEA framework.

THE ZETA-DETERMINANTS OF HARMONIC OSCILLATORS ON R2

  • Kim, Kyounghwa
    • Korean Journal of Mathematics
    • /
    • 제19권2호
    • /
    • pp.129-147
    • /
    • 2011
  • In this paper we discuss the zeta-determinants of harmonic oscillators having general quadratic potentials defined on $\mathbb{R}^2$. By using change of variables we reduce the harmonic oscillators having general quadratic potentials to the standard harmonic oscillators and compute their spectra and eigenfunctions. We then discuss their zeta functions and zeta-determinants. In some special cases we compute the zeta-determinants of harmonic oscillators concretely by using the Riemann zeta function, Hurwitz zeta function and Gamma function.

기가헤르츠 오실레이터를 위한 BN 나노튜브 연구 (A study on a Boron-Nitride Nanotube as a Gigahertz Oscillator)

  • 이준하
    • 반도체디스플레이기술학회지
    • /
    • 제6권1호
    • /
    • pp.27-30
    • /
    • 2007
  • The gigahertz oscillator behavior of double-walled boron-nitride nanotube (BNNT) was investigated by using classical molecular dynamics simulations. The BNNT oscillator characteristics were compared to carbon-nanotube (CNT) and hybrid-C@BNNT oscillators. The results show that the BNNT oscillators are higher than the van der Waals force of the CNT oscillator. Since the frictional effects of BNNT oscillators are higher than that of a CNT oscillator, the damping factors of BNNT and hybrid oscillators are higher than that of a CNT oscillator.

  • PDF

선형시변 발진기 위상잡음 이론의 전력 보존성의 증명 (Analytical Proof of Conservation of Power in the LTV Phase Noise Theory for Noisy Oscillators)

  • 전만영
    • 한국전자통신학회논문지
    • /
    • 제7권4호
    • /
    • pp.855-859
    • /
    • 2012
  • 본 연구에서는 선형시변 발진기 위상잡음 이론에 있어서 전력 스펙트럼 밀도식의 일반화된 형태를 유도한다. 유도된 전력 스펙트럼 밀도식을 바탕으로 선형시변 발진기 위상잡음 이론은 발진 신호의 전력 보존성을 예측할 수 있음을 본 연구에서 증명한다. 게다가, 유도된 전력 스펙트럼 밀도식은 선형시변 발진기 위상잡음 이론이 기본 주파수와 그 하모닉을 포함하는 전 주파수 영역에 걸친 전력 스펙트럼의 특성을 설명 할 수 있게 한다.

Vibration analysis of high nonlinear oscillators using accurate approximate methods

  • Pakar, I.;Bayat, M.
    • Structural Engineering and Mechanics
    • /
    • 제46권1호
    • /
    • pp.137-151
    • /
    • 2013
  • In this paper, two new methods called Improved Amplitude-Frequency Formulation (IAFF) and Energy Balance Method (EBM) are applied to solve high nonlinear oscillators. Two cases are given to illustrate the effectiveness and the convenience of these methods. The results of Improved Amplitude-Frequency Formulation are compared with those of EBM. The comparison of the results obtained using these methods reveal that IAFF and EBM are very accurate and can therefore be found widely applicable in engineering and other science. Finally, to demonstrate the validity of the proposed methods, the response of the oscillators, which were obtained from analytical solutions, have been shown graphically and compared with each other.

임베디드 시스템을 위한 탄소나노튜브 오실레이터의 특성 해석 (Characteristics of Carbon Nanotube Oscillator for Embedded System)

  • 이준하
    • 한국산학기술학회논문지
    • /
    • 제9권5호
    • /
    • pp.1150-1153
    • /
    • 2008
  • 본 논문은 탄소 나노 튜브 (CNT)로 형성된 다중벽 탄소 나노튜브의 진동 특성을 분자 역학적 시뮬레이션 방법에 의해 해석하였다. 이로부터 이중벽 탄소 나노튜브에 비하여 다중벽 탄소 나노튜브의 경우 진동 주파수 분할이 발생됨을 분석하였다. 또한 세개의 주파수 발생자로써의 4차 벽, 5차 벽, 6차 함수 벽으로 된 오실레이터와 직경으로부터 독립적인 적합성 제안을 위해 지속적인 세 개의 정점이 나타나는 것으로 분석되었다.

충돌 및 가동단 마찰을 고려한 지진하중을 받는 교량의 거동분석 (Effects of Pounding and friction upon Bridge Motions under Seismic Excitations)

  • 김상효
    • 한국지진공학회:학술대회논문집
    • /
    • 한국지진공학회 1999년도 추계 학술발표회 논문집 Proceedings of EESK Conference-Fall
    • /
    • pp.193-202
    • /
    • 1999
  • effect of pounding and friction between oscillators upon global response behaviors of a bridge system under seismic excitations are examined in this study. For convenience an idealized mechanical model is proposed which still retains the dynamic characteristics of bridge motions using multiple oscillators, Each oscillator is consisting of four degrees-of-freedom to implement the pounding between the adjacent oscillators and friction at movable supports, The impact element and bi-linear model are utilized for pounding and friction at movable supports. The impact element and bi-linear model are utilized for pounding and friction respectively. Also the effects of abutments are investigated by adding the addition oscillators consisting of two degrees-of-freedom. The effects of pounding and frictions are determined using the proposed model and the effect of the abutment is also verified, It is found that both pounding and friction affect the bridge responses significantly while the first pounding occurs between the abutment and the nearby oscillator.

  • PDF

Comparison of Two Layout Options for 110-GHz CMOS LC Cross-Coupled Oscillators

  • Kim, Doyoon;Rieh, Jae-Sung
    • Journal of electromagnetic engineering and science
    • /
    • 제18권2호
    • /
    • pp.141-143
    • /
    • 2018
  • Two 110-GHz oscillators have been developed in 65-nm CMOS technology. To study the effect of layout on the circuit performance, both oscillators had the same LC cross-coupled topology but different layout schemes of the circuit. The oscillator with the conventional cross-coupled design (OSC1), showed an output power of -3.9 dBm at 111 GHz with a phase noise of -75 dBc/Hz at 1-MHz offset. On the other hand, OSC2, with a modified cross-coupled line layout, generated an output power of -2.0 dBm at 117 GHz with a phase noise of -77 dBc/Hz at 1-MHz offset. The result indicates that the optimized layout can improve key oscillator performances such as oscillation frequency and output power.

Performance Estimation of an Implantable Epileptic Seizure Detector with a Low-power On-chip Oscillator

  • Kim, Sunhee;Choi, Yun Seo;Choi, Kanghyun;Lee, Jiseon;Lee, Byung-Uk;Lee, Hyang Woon;Lee, Seungjun
    • 대한의용생체공학회:의공학회지
    • /
    • 제36권5호
    • /
    • pp.169-176
    • /
    • 2015
  • Implantable closed-loop epilepsy controllers require ideally both accurate epileptic seizure detection and low power consumption. On-chip oscillators can be used in implantable devices because they consume less power than other oscillators such as crystal oscillators. In this study, we investigated the tolerable error range of a lower power on-chip oscillator without losing the accuracy of seizure detection. We used 24 ictal and 14 interictal intracranial electroencephalographic segments recorded from epilepsy surgery patients. The performance variations with respect to oscillator frequency errors were estimated in terms of specificity, modified sensitivity, and detection timing difference of seizure onset using Generic Osorio Frei Algorithm. The frequency errors of on-chip oscillators were set at ${\pm}10%$ as the worst case. Our results showed that an oscillator error of ${\pm}10%$ affected both specificity and modified sensitivity by less than 3%. In addition, seizure onsets were detected with errors earlier or later than without errors and the average detection timing difference varied within less than 0.5 s range. The results suggest that on-chip oscillators could be useful for low-power implantable devices without error compensation circuitry requiring significant additional power. These findings could help the design of closed-loop systems with a seizure detector and automated stimulators for intractable epilepsy patients.

트란지스터 발진기의 발진영역과 부저항의 변화에 관한 연구 (A Study on the Oscillation Region and the Variation of Negative Resistance in Transistor Oscillators)

  • 이종각
    • 대한전자공학회논문지
    • /
    • 제8권3호
    • /
    • pp.15-26
    • /
    • 1971
  • 본논문은 트란지스터발진기의 발진영역과 부저항의 변화에 대하여 하나의 새로운 방법을 써서 고찰한 것이다. 트란지스터귀환발진기의 발진영역을, 귀환소자임피이던스의 복소평면상에 나타내면 원이 된다. 그리고, 귀환소자임퍼이던스의 저항분을 일정하게 하고, 리액턴스분을 변화시키거나, 혹은 이와 반대로 리액틴스분을 일정하게하고, 저항분을 변화시킬 때, 출력콘덕턴스가 극소로 되는 점의 궤적은 쌍곡선이 된다. 트란지스터수정발진기에서는, 발진영역은 부하임퍼이던스의 복소평면상에서, 입력임피이던스의 실수부 및 허수부를 0이 되게 하는, 두개의 원에 의하여 정해진다. 그리고, 부하임피이던스의 저항분을 일정하게 하고 리액턴스분을 변화시키거나, 혹은 반대로 리액턴스분을 일정하게 하고 저항분을 변화시킬 때, 입력저항을 극대 또는 극소로 되게 한는 점의 궤적은, 네 개의 직선이 된다.

  • PDF