Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
권호 표지
DOI QR코드

DOI QR Code

Comparison of Two Layout Options for 110-GHz CMOS LC Cross-Coupled Oscillators

  • Kim, Doyoon (School of Electrical Engineering, Korea University) ;
  • Rieh, Jae-Sung (School of Electrical Engineering, Korea University)
  • Received : 2017.12.01
  • Accepted : 2018.01.30
  • Published : 2018.04.30
Download PDF
⟨ Previous Next ⟩

Abstract

Two 110-GHz oscillators have been developed in 65-nm CMOS technology. To study the effect of layout on the circuit performance, both oscillators had the same LC cross-coupled topology but different layout schemes of the circuit. The oscillator with the conventional cross-coupled design (OSC1), showed an output power of -3.9 dBm at 111 GHz with a phase noise of -75 dBc/Hz at 1-MHz offset. On the other hand, OSC2, with a modified cross-coupled line layout, generated an output power of -2.0 dBm at 117 GHz with a phase noise of -77 dBc/Hz at 1-MHz offset. The result indicates that the optimized layout can improve key oscillator performances such as oscillation frequency and output power.

Keywords

References

  1. D. Yoon, J. Kim, J. Yun, M. Kaynak, B. Tillack, and J. S. Rieh, "300-GHz direct and heterodyne active imagers based on $0.13-{\mu}m$ SiGe HBT technology," IEEE Transactions on Terahertz Science and Technology, vol. 7, no. 5, pp. 536-545, 2017. https://doi.org/10.1109/TTHZ.2017.2715419
  2. J. Yoo and J. S. Rieh, "CMOS 120 GHz phase-locked loops based on two different VCO topologies," Journal of Electromagnetic Engineering and Science, vol. 17, no. 2, pp. 98-104, 2017. https://doi.org/10.5515/JKIEES.2017.17.2.98
  3. C. T. Coen, A. C. Ulusoy, P. Song, A. Ildefonso, M. Kaynak, B. Tillack, and J. D. Cressler, "Design and on-wafer characterization of G-band SiGe HBT low-noise amplifiers," IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 11, pp. 3631-3642, 2016. https://doi.org/10.1109/TMTT.2016.2608773
  4. J. Yun, D. Yoon, H. Kim and J. S. Rieh, "300-GHz InP HBT oscillators based on common-base cross-coupled topology," IEEE Transactions on Microwave Theory and Techniques, vol. 62, no. 12, pp. 3053-3064, 2014. https://doi.org/10.1109/TMTT.2014.2364608

Cited by

  1. Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules vol.8, pp.2, 2019, https://doi.org/10.3390/electronics8020210
  2. D-Band Frequency Tripler Module Using Anti-Parallel Diode Pair and Waveguide Transitions vol.9, pp.8, 2020, https://doi.org/10.3390/electronics9081201