• Korean Journal of Materials Research
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• v.30 no.1
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.90-95
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• 2019

Methylammonium lead bromide ($MAPbBr_3$) has attracted a lot of attention due to their excellent optoelectronic properties such as the compositional flexibility relevant to photoluminescence (PL) and UV-Vis absorbance spectrum, high diffusion length, and photoluminescence quantum yield (PLQY). Despite such advantages of organic-inorganic perovskite materials, more systematic study on manipulation of their optoelectronic properties in homo- or heterovalent metal ions doped halide perovskite nanocrystals is lacking. In this study, we systematically investigated the optical properties of colloidal $CH_3NH_3Pb_{1-x}Sn_xCl_{2x}Br_{3-2x}$ particles by addition of $SnCl_2$ into the typical methylammonium lead tribromide ($CH_3NH_3PbBr_3$) precursor solution. We found that only 1% addition of $SnCl_2$ shows a significant blue-shift from 540 nm to 420 nm in UV-Vis absorbance spectrum due to the strong quantum confinement effect. Furthermore, continuous blue-shift in photoluminescence spectra was observed as the amount of Cl increases. These experimental results provide new insights into the replacement of Pb within $MAPbBr_3$, required for the broadening of their application.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.11-16
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• 2004

Electronic devices are getting smaller due to integration of electronic chip, and heat generated in electronic devices can cause loss of performance and/or reliability of the devices. In this research, metals such as gold, nickel and copper are plated onto a porous membrane by electroless plating method to make an efficient micro-heatsinks. Electroless plating includes sensitization and activation steps in pre-treatment steps. A polycarbonate(PC) membrane was sensitizied, activated and deposited in each metal solution for plating. Among manufactured microfibrils, heat transfer and radiation properties of Ni-microfibril with high surface area were more effective than those of $Au^-$ and Cu-microfibril.

• Korean Journal of Materials Research
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• v.27 no.6
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• pp.307-311
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• 2017

Organometal halide perovskite materials, due to the tunability of their electronic and optical properties by control of composition and structure, have taken a position of significant importance in optoelectronic applications such as photovoltaic and lighting devices. Despite numerous studies on the structure - property relationship, however, practical application of these materials in electronic and optical devices is still limited by their processability during fabrication. Achieving nano-sized perovskite particles embedded in a polymer matrix with high loading density and outstanding photoluminescence performance is challenging. Here, we demonstrate that the careful control of nanoparticle formation and growth in the presence of poly(methyl methacrylate) results in perovskite nanoparticle - polymer nanocomposites with very good dispersion and photoluminescence. Furthermore, this approach is found to prevent further growth of perovskite nanoparticles, and thus results in a more uniform film, which enables fabrication using the perovskite nanoparticles.

• Current Optics and Photonics
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• v.1 no.1
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• pp.7-11
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• 2017

In this study, multilayered graphene was easily transferred to the target substrate in one step using thermal release tape. The transmittance of the transferred graphene according to the number of layers was measured using a spectrophotometer. The sheet resistance was measured using a four-point probe system. Graphene formed using this transfer method showed almost the same electrical and optical properties as that formed using the conventional poly (methyl methacrylate) transfer method. This method is suitable for the mass production of graphene because of the short process time and easy large-area transfer. In addition, multilayered graphene can be transferred on various substrates without wetting problem using the one-step dry transfer method. In this work, this easy transfer method was used for dielectric substrates such as glass, paper and polyethylene terephthalate, and a sheet resistance of ~240 ohm/sq was obtained with three-layer graphene. By fabricating organic solar cells, we verified the feasibility of using this method for optoelectronic devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.237.2-237.2
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• 2011

SAW-ED를 이용하는 박막공정 기술을 통하여 나노레벨의 SWCNT 와 PEDOT의 thin film 및 hybrid화된 film구조를 얻을 수 있었다. SWCNT와 전도성고분자와의 hybridization을 통해 균일상의 표면 morphology를 갖는 고전도성 투명 필름을 제작하고, 이들의 전기광학적 성질을 확인하였다. SAW-ED를 이용하는 박막공정 기술은 나노입자 및 나노구조물의 박막화 패턴화를 포함하는 새로운 deposition 기술로서의 응용성을 가지고 있으며, 본 연구에서는 SWCNT와 전도성고분자를 이용하여 이를 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.421.2-421.2
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• 2014

We report on the growth of ZnO nanorods (NRs) grown on graphite and silicon substrates via an all-solution process and characteristics of their heterojunctions. Structural investigations indicated that morphological and crystalline properties were not significantly different for the ZnO NRs on both substrates. However, optical properties from photoluminescence spectra showed that the ZnO NRs on graphite substrate contained more point defects than that on Si substrate. The ZnO NRs on both substrates showed typical rectification properties exhibiting successful diode formation. The heterojunction between the ZnO NRs and the graphite substrate showed a Schottky diode characteristic and photoresponse under ultraviolet illumination at a small reverse bias of -0.1 V. The results showed that the graphite substrate could be a good candidate for a Schottky contact electrode as well as a conducting substrate for electronic and optoelectronic applications of ZnO NRs.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• Korean Chemical Engineering Research
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• v.46 no.5
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• pp.938-944
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• 2008

The electro-optic properties of polymer-dispersed liquid crystal cells containing BDVE(Butanediol vinyl ether) in PN393 base pre-polymer were examined. The higher the contents of BDVE, the smaller becomes the droplet size. However, the droplet size was saturated around $3{\mu}m$ even at 40 wt% of BDVE. Both of contrast ratio and response time of PDLC cell fabricated with a new formula were found to be superior to the reference cell with PN393 by the factor of 4.9 and 0.15, respectively. However, the new formula made the operating voltage go higher compared to the reference cell of PN393 formula. Except for contrast ratio, response time as well as operating voltage were found to be highly stabilized by adding BDVE in PN393 base pre-polymer over the temperature range of $0{\sim}60^{\circ}C$ studied.