• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.637-637
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• 2013

We develop single-crystal poly(3,4-ethylenedioxythiopene nanowires using liquid-bridge-mediated nanotransfer printing via vapor phase polymerization. This direct printing method can simultaneously enable the synthesis, alignment and patterning of the nanowires from molecular ink solutions. Twoor three-dimensional complex structures of various single-crystal organic nanowires were directly fabricated over a large area using many types of molecular inks. This method is capable of generating several optoelectronic devices. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. To demonstrate its usefulness, we used LB-nTM to fabricate nanowire field-effect transistors and arrays of 6,13-bis (triisopropyl- silylethynyl) pentacene (TIPS-PEN) nanowire field-effect transistors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.429-429
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• 2013

We present a systematic study of the electrical, optical and electromechanical properties of flexible graphene/metal grid hybrid transparent conductive electrodes using 4-point prove method, ultraviolet/visible spectrometer and inner/outer bending test system. The hybrid electrodes were synthesized by depositing a silver grid on a graphene surface. The sheet resistance of hybrid electrodes was as low as 30 Ω/square, while the transmittance was 90%. The electromechanical properties as a function of the change of bending radius were evaluated by measuring the change in resistance. The result will be presented in detail. We believe that these results will provide useful information for the flexible optoelectronic devices based on graphene transparent electrodes.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.981-982
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• 2006

In this study, the synthesis and semiconducting properties of cation and defect-doped KTaO3 film is reported. KTaO3is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the KTaO3 lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting KTaO3:Ca films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were 0.27 cm2/Vs and 3.21018cm-3.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.29-29
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• 2008

Realization of electronics with performance equal to established technologies that use rigid semiconductor wafers, but in lightweight, foldable and stretchable formats would enable many new application possibilities. Examples include wearable systems for personal health monitoring, 'smart' surgical gloves with integrated electronics and electronic eye type imagers that incorporate focal plane arrays on hemispherical substrates. Circuits that use organic or certain classes of inorganic electronic materials on plastic or steel foil substrates can provide some degree of mechanical flexibility, but they cannot be folded or stretched. Also, with few exceptions such systems offer only modest electrical performance. In this talk, I will present a new approach to high performance, flexible and stretchable integrated circuits. These systems combine single-crystal silicon nanoribbons with thin plastic or elastomeric substrates using both "top-down" and "transfer-printing" technologies. The strategies represent promising routes to high performance, flexible and stretchable optoelectronic devices that can incorporate established, high performance inorganic electronic materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.737-749
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• 2016

Recently perovskite materials with much cheaper cost and marvellous optoelectronic properties have been studied for next generation LED display devices overseas. Technology development trends of inorganic $CsPbX_3$(X=halogen) based LEDs (PeLEDs) with assumed high stability were investigated on literature worldwide. It was found that syntheses methods of these nanocrystals (NCs, mainly quantum dots, QDs) made great progress. A new room temperature synthesis method showed outstanding PL (photoluminescence) properties such as high quantum yield (QY), narrow emission width, storage stability comparable with, or often exceeding those of conventional hot injection method and CdSe@ZnS type inorganic colloidal QDs. PeLEDs with shell layers might be more promising, indicating urgent real research start of this solution processing technology for small businesses in Korea.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.755-757
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• 2009

We developed a novel patterning method of organic light emitting materials using a laser-inscribed sacrificial layer for fabricating high-resolution pixels in organic light emitting displays (OLEDs). Our patterning process is capable of achieving high spatial resolution of about 10 ${\mu}m$. Moreover, it has no detrimental effect on the electrical properties of organic materials. This patterning approach is expected to be applicable for patterning and integrating a wide range of organic materials for organic electronic and optoelectronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1428-1429
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• 2009

Compared to the indium zinc oxide (IZO) film fabricated by micro-powder target, the IZO film with nano-powder target exhibited improved optoelectronic properties of wide bandgap, high transmittance, surface uniformity, and low sheet resistance due to the high film density.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.275-278
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• 2017

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.801-806
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• 2003

In recent years, there has been large interest in the fabrication of the self organized nanoscale structures since not only their potential utilization in electronic, optoelectronic, and magnetic devices but also their fundamental interest such as uniformity and regularization. An attractive candidate of these materials is anodic porous alumina film(Al$_2$O$_3$) which is formed by the anodization of aluminum in an appropriate acid solution. In this study to fabricate the porous alumina film with very uniform and nearly parallel pores the anodization was carried out under constant voltage mode in 0.3M oxalic acid as an electrolyte. The hexagonally ordered arrays with a few $\mu\textrm{m}$ in size two-dimensional polycrystalline structure were obtained of which pore densities were 1.1${\times}$10$\^$10//$\textrm{cm}^2$.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1754-1756
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• 2000

Organic semiconductors based on fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition(OMBD) and vacuum evaporation respectively. For the gate dielectric, polyamic acid was spin-coated and cured into polyimide at 350$^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was 50${\mu}m$ and 5mm. It was found that field effect mobility was 0.012$cm^{2}/Vs$, and on/off current ratio was $10^5$.