• Title/Summary/Keyword: Optical and structural properties

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Monitoring of Beam-column Joint Using Optical Fiber Sensors (광섬유센서를 이용한 Beam-column 조인트의 하중에 따른 변위 계측)

  • Kim, Ki-Soo
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.15 no.1 s.94
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    • pp.3-11
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    • 2005
  • For monitoring of the civil and building structure, optical fiber sensors are very convenient. The fiber sensors are very small and do not disturb the structural properties. They also have several merits such as electro-magnetic immunity, long signal transmission, good accuracy and multiplexibility in one sensor line. Strain measurement technologies with fiber optic sensors have been investigated as a part of smart structure. In this paper, we investigated the possibilities of fiber optic sensor application to the monitoring of beam-column joints of structures. We expect that the fiber optic sensors replace electrical strain gauges. The commercial electric strain gauges show good stability and dominate the strain measurement market. However, they lack durability and long term stability for continuous monitoring of the structures. In order to apply the strain gauges, we only have to attach them to the surfaces of the structures. In this paper, we investigate the possibility of using fiber optic Bragg grating sensors to joint structure. The sensors show nice response to the structural behavior of the joint.

Monitoring of Beam-Column Joint Using Optical Fiber Sensors (광섬유센서를 이용한 Beam-column 조인트의 하중에 따른 변위 계측)

  • 김기수
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2003.11a
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    • pp.595-601
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    • 2003
  • For monitoring of the civil and building structure, optical fiber sensors are very convenient. The fiber sensors are very small and do not disturb the structural properties. They also have several merits such as electro-magnetic immunity, long signal transmission, good accuracy and multiplicity of one sensor line. Strain measurement technologies with fiber optic sensors have been investigated as a part of smart structure. In this paper, we investigated the possibilities of fiber optic sensor application to the monitoring of beam-column joints of structures. We expect that the fiber optic sensors replace electrical strain gauges. The commercial electric strain gauges show good stability und dominate tile strain measurement market. However, they lack durability and long term stability for continuous monitoring of the structures. In order to apply the strain gauges, we only have to attach them to the surfaces of the structures. In this paper, we investigate the possibility of using fiber optic Bragg grating sensors to joint structure. The sensors show nice response to the structural behavior of the joint.

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Effects of the substrate temperature on the properties of Al doped ZnO films (Al doped ZnO 박막 특성에 미치는 증착 온도의 영향)

  • Kim, Yong-Hyun;Seong, Tae-Yeon;Kim, Won-Mok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.82-83
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    • 2008
  • AI doped ZnO (AZO) films, and intentionally Zn added AZO (ZAZO) films were prepared on Corning glass by rf magnetron sputtering, and the electrical, optical, and structural properties of the as-deposited films together with the air annealed films were investigated. The resistivity of the AZO films increased with increasing substrate temperature and having minimum resistivity at $150^{\circ}C$. At the high temperature, the ZAZO films showed improved electrical properties better than the AZO films due.to increase in both the carrier concentration and.the Hall mobility. Upon air annealing at $500^{\circ}C$, the resistivity of both AZO and ZAZO films increased substantially, but the relative amount of degradation was smaller for films deposited at $450^{\circ}C$ than the films deposited at $150^{\circ}C$.

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Effect of Growth Temperature on the Structural and Optical Properties of Gd-doped Zinc Oxide Thin Films

  • Jo, Sin-Ho;Kim, Mun-Hwan
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.247-247
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    • 2012
  • Gd-doped ZnO thin films were prepared with different growth temperatures by using a radio-frequency magnetron sputtering method. The deposited samples were characterized by using the X-ray diffractometer, the scanning electron microscopy, and the photoluminescence spectroscopy. All of the films show an average transmittance of about 85% in the wavelength range from 400 to 1100 nm.

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Graphite상의 ZnO Nanorod성장과 그를 이용한 Schottky Diode 제작

  • Nam, Gwang-Hui;Baek, Seong-Ho;Park, Il-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.421.2-421.2
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    • 2014
  • We report on the growth of ZnO nanorods (NRs) grown on graphite and silicon substrates via an all-solution process and characteristics of their heterojunctions. Structural investigations indicated that morphological and crystalline properties were not significantly different for the ZnO NRs on both substrates. However, optical properties from photoluminescence spectra showed that the ZnO NRs on graphite substrate contained more point defects than that on Si substrate. The ZnO NRs on both substrates showed typical rectification properties exhibiting successful diode formation. The heterojunction between the ZnO NRs and the graphite substrate showed a Schottky diode characteristic and photoresponse under ultraviolet illumination at a small reverse bias of -0.1 V. The results showed that the graphite substrate could be a good candidate for a Schottky contact electrode as well as a conducting substrate for electronic and optoelectronic applications of ZnO NRs.

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Properties of AZO thin film deposited on the PES substrate (PES 기판상에 증착된 AZO 박막의 특성연구)

  • Kim, Sang-Mo;Rim, You-Seung;Choi, Myung-Gyu;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.403-404
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    • 2007
  • We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. ZnO doped the content of Al 2 wt% was used and the sputtering conditions were gas pressure 1mTorr and input power 100W. The electrical, structural and optical properties of AZO thin films were investigated. To investigate the as-deposited thin film properties, we employed four-point probe, UV/VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).

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The Structural, Electrical, and Optical Properties of ZnO Ultra-thin Films Dependent on Film Thickness (ZnO 초박막의 두께 변화에 따른 구조적, 전기적, 광학적 특성 변화 연구)

  • Kang, Kyung-Mun;Wang, Yue;Kim, Minjae;Lee, Hong-Sub;Park, Hyung-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.2
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    • pp.15-21
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    • 2019
  • We investigated the structural, electrical and optical properties of zinc oxide (ZnO) ultra-thin films grown at $150^{\circ}C$ by atomic layer deposition (ALD). Diethylzinc and deionized water were used as metal precursors and reactants, respectively, for the deposition of ZnO thin films. The growth rate per ALD cycle was a constant 0.21 nm/cycle at $150^{\circ}C$, and samples below 50 cycles had amorphous properties due to the relatively thin thickness at the initial ALD growth stage. With the increase of the thickness from 100 cycles to 200 cycles, the crystallinity of ZnO thin films was increased and hexagonal wurtzite structure was observed. In addition, the particle size of the ZnO thin film increased with increasing number of ALD cycles. Electrical properties analysis showed that the resistivity value decreased with the increase of the thin film thickness, which is correlated with the decrease of the grain boundary concentration in the thicker ZnO thin film due to the increase of grain size and the improvement of the crystallinity. Optical characterization results showed that the band edge absorption in the near ultraviolet region (300 nm~400 nm) was increased and shifted. This phenomenon is due to the increase of the carrier concentration with the increase of the ZnO thin film thickness. This result agrees well with the decrease of the resistivity with the increase of the thin film thickness. Consequently, as the thickness of the thin film increases, the stress on the film surface is relaxed, the band gap decreases, and the crystallinity and conductivity are improved.