• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.222-223
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• 2006

In this paper, we manufactured high flux LED module with Through Hole type. and we measured electrical, optical and thermal properties by driving type. LED module was composed with 8*8 arrangement form by using the glass epoxy PCB. Also, we measured the most suitable driving type with static voltage driving type and static current driving type. As a result, the LED Module of static voltage driving type showed high luminance characteristic than the static current driving type by suppling enough bias. However, the static current driving type showed more stable driving properties because of fast decreasing properties about brightness by increasing the surrounding temperature in the static voltage driving type. Also, due to Quantum confined Stark effect from piezoelectric field, the wavelength of bule peak shifted to long wavelength direction by increasing the surrounding temperature in the static voltage driving type.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.54-57
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 m. During deposition, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $400^{\circ}C$ and flow rate of 350 sccm, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by diffraction (XRD), SEM and the optical of the ZnO were characterized by photoluminescence (PL).

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1568-1569
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• 2007

TFT-LCD used in display area is not a light-emissive device itself but TFT-LCD can overcome through the employ of the backlight unit (BLU). BLU is very important device in TFT-LCD system. However, the old-fashion BLU of CCFL type is crucible to the health due to the contained material, mercury (Hg). Moreover, strong temperature dependency of lamp employed with Hg becomes the other disadvantage in practical usage. To solve these problems, Hg-Free lamp with strong thermal resistance property is required to displace the Hg lamp. We studied optical and electrical properties of Xe-Ne-He mixed gas that is dependent on change of mixed ratio and pressure. In our results, the designed lamp without the phosphorescent material has the lowest firing voltage at xe 50%(Ne:He=9:1).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.339-339
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• 2013

We study on the optical and electrical properties of indium-free ZTO(ZnSnO)/Ag/ZTO (ZAZ) multilayer electrodes for the low-cost transparent electrode. In the first step, each single layer was deposited using rf magnetron in-line sputter with various working pressure based on $O_2$/$Ar+O_2$ ratio (0~3%) and power at room temperature. Secondly, we studied the optical and electrical properties by analyzing the refractive index, extinction coefficient, transmittance and resistivity of each layer. Finally, we optimized the thickness of each layer using macleod simulation program based on the analyzed optical properties and fabricated the multilayer electrode. As a result, We achieved a low sheet resistance of $11{\Omega}$/sq and anaverage transmittance of 80% in the visible region of light (380~780 nm). This indicates that indium-free ZAZ multilayer electrode is a promising low-cost and low-temperature processing electrode scheme.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.481-489
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• 1994

The $SnO_2$/(n)Si solar cell was fabricated by electron beam evaporation method, and their properties were investigated. In proportion to increase of substrate and annealing temperature, the conductivity of $SnO_2$ thin film was increased, but its optical transmission decreases because of increasing optical absorption of free electrons in the thin film. $SnO_2$/Si Solar cell characteristics were improved by annealing, but the solar cells was deteriorated by heat treatment above 500[.deg. C]. The optimal outputs of $SnO_2$/Si solar cell through above investigations were $V_{\var}$:350[mV], $J_{sc}$ ;16.53[mA/c $m^{2}$], FF;0.41, .eta.=4.74[%]

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.142-146
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• 2007

Nowadays, itis inevitable trend to use high Xe gas contents for increase luminous efficiency and luminance in plasma display panel. However, the increase of Xe gas contents causes the driving voltage, although the brightness is increase. In this paper, we study the characteristics of electro optical according to Xe gas contents and gas pressure. Electro-optical characteristics were investigated by the discharge voltage, luminance and luminous efficacy measurements, respectively. With some increasing Xe gas contents and pressure, the electro-optical properties increased. However, the characteristics of electro-optical begin to be saturated, when too high increased Xe gas contents and pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.693-699
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• 1998

In this work $Cd_4GeS_6:Co^{2+}$(0.5mole%) single crystals were grown by the chemical transporting reactiov(CTR) method using high purity(6N) elements. The grown single crystals crystallized in a monoclinic structure(space group Cc). The direct optical energy gap of this single crystals was found to be 2.445eV at 300K and the temperature dependence of optical energy gap was fitted well to Varshni equation. But at temperatures lower than 70K an anomalous temperature dependence of the optical energy gap was obtained. This anomalous temperature dependence accored well with the anomalous temperature dependence of the unit cell volume. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gaps.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.101-102
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The un doped ZnO thin films were grown on c-$Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.584-588
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• 2011

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.808-811
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• 2008

Optical and mechanical properties of diamond-like carbon (DLC) films synthesized by RF plasma enhanced chemical vapor deposition were investigated as a function the C/H ratio in gas mixture. The C/H ratio was varied from 6 to 10 %, adjusting the amount of $CH_4$ and $H_2$ as the source gas. The optical and mechanical properties of DLC films were characterized by UV spectrometer, Ellipsometer and Nano-indenter. The change of the C/H ratio during synthesis of DLC films had many effects on the growth rate, transmittance, refractive index and hardness. The growth rate of the films increased exponentially with the increase in C/H ratio. The hardness of the films showed the tendency to improve with increasing C/H ratio, whereas the transmittance decreased. The refractive index was varied from 2.03 to 2.17, and these refractive indexes close to 2.0 indicates that it can be applied to Si-based solar cell.