• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.924-930
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• 1998

In this study, we describe the properties of an electro-optical modulator with CPW(coplanar waveguide) electrode fabricated on $LiNvO_3$ optical waveguide, that is applicable to optical communications. These optical modulators have features that use a buffer layer to reduce velocity mismatch between microwaves and optical wave as well as employ CPW to improve impedance and propagation mode mismatch between the electrode and the external circuits. And an annealed proton exchange technique for obtaining low-loss optical waveguides and good reproducibility was employed. Taking into consideration the mentioned background, to achieve the lower driving voltage of optical modulator, we have re-disigned the longer interaction length. And their device properties are discussed also. As a result, fabricated optical modulators of good 10Gps operation and low voltage(5.6V of the halfwave lengfth voltage) at an $1.5{\mu}m$ wavelength are achived with good reproducibility.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.361-361
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• 2012

PZT (Pb(Zr,Ti)O3) thin films have been used widely in the MEMS application, due to their inherent ferroelectric and piezoelectric properties. Such ferroelectricity induces much higher dielectric constants compared to those of the nonperovskite materials. In this work, the PZT thin films were deposited onto Indium-Tin-oxide (ITO) substrates through the spin-coating of PZT sols. The deposited PZT thin films were characterized in terms of the electrical and optical properties with special emphases on conductivity and optical constants. The detailed analysis techniques incorporate the dc-based current-voltage characteristics for the electrical properties, spectroscopic ellipsometry for optical characterization, atomic force microscopy for surface morphology, X-ray Photoelectron Spectroscopy for chemical bonding, Energy-dispersive X-ray Spectrometry for chemical analyses and X-ray diffraction for crystallinity. The ferroelectric phenomena were confirmed using capacitance-voltage measurements. The integrated physical/chemical features are attempted towards energy-oriented applications applicable to next-generation high-efficiency power generation systems.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.416-419
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• 2008

In this study, we report on the characteristics of Aldoped ZnO (AZO) co-sputtered indium tin oxide (ITO) films prepared by dual target direct current (DC) magnetron sputtering at room temperature for organic light emitting diodes (OLEDs). The electrical and optical properties of co-sputtered IAZTO electrode were critically dependent on the DC power of AZO. Furthermore, the characteristics of co-sputtered IAZTO electrode were influenced by rapid thermal annealing temperature.

• Journal of Information Display
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• 제11권2호
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• pp.91-93
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• 2010

The shearing effects on the electro-optical properties of a stressed cholesteric liquid crystal were investigated. A photopolymer was dispersed in the cholesteric liquid crystal cell. By carefully choosing the mixing ratio between the liquid crystal and the photoreactive monomer, and by applying suitable mechanical shearing on the substrates, a cholesteric liquid crystal display with a low threshold voltage and no alignment layer was demonstrated.

• Current Optics and Photonics
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• 제3권2호
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1461-1462
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• 2011

In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for dye sensitized solar cell, ITiO thin films were deposited on Corning glass substrate by rf magnetron sputtering method. The effects of the discharge power and gas pressure on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, the effect of heat treatment and bias voltage on the morphological properties of ITiO thin film were also studied and discussed. The concentration ratio (%) for In, Ti, and O was 27 : 2 : 42. The electrical resistivity of $2{\times}10^{-4}{\Omega}{\cdot}cm$ and 90% of optical transmittance were obtained under the conditions of 5mTorr of gas pressure, 300W of discharge power, $300^{\circ}C$ of substrate temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.398-401
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• 2001

Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of $T/R_{sh}$ and $T^{10}/R_{sh}$ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and $8.95({\times}10^{-3}\Omega^{-1})$ respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.398-401
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• 2001

Indium tin oxide films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\sub$sh/ and T$\^$10//R$\sub$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 (x10$\^$-3/Ω$\^$-1/), respectively.

• 전자공학회논문지A
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• 제33A권2호
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• pp.87-95
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• 1996

We have studied the effects of La concentration on the optical and electrical properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the optical and electrical properties are greatly affected by the La concentration. The refreactiv eindices of the films varied from 2.23 to 1.93 with varying La concentration in the range from 15 to 33 mol%. The dielectric constants of the films vary form 340 to 870 with varying La concentration in the range form 15 to 33 mol%. Hysteresis loop becomes slimmer with the increase of La concentration form 15 to 28mol% and little fatter again with the increase of La concentration form 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film shows the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100Hz, the dielectric constant and the loss tangent of PLT(28) thin films are 940 and 0.08 respectively. Its leakage current density at 1.5${\times}10^{5}$V/cm is 1${\times}10^{-6}A/cm^{2}$. The comparision between the simulated and the experimental curves for the switching transient characteristics shows that PLT (28) thin films behaves like normal dielectrics.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.600-604
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• 2005

We studied that structural and optical properties of ZnO films depend on oxygen contents. ZnO films were deposited on Si (111) substrates at room temperature by rf sputtering system and the thickness of films was 100 nm. The ZnO films were annealed in thermal furnace for 2 h at 800 and $900^{\circ}C$ in $H_2O,\;N_2$, and air ambient gases to control oxygen contents. We used AES, PL, XRD, AFM. As our result, crystal quality and luminescence improved until O/Zn is 1. However, when O/Zn ratio Is larger than 1, the structural and optical properties were getting worse.