• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• 한국컴퓨터정보학회논문지
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• 제25권4호
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• pp.1-9
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• 2020

본 논문에서는 데이터 압축을 통해 메모리 시스템의 에너지 효율 및 성능을 향상시키는 동적랭크 서브세팅 기법 (Dynamic Rank Subsetting, DRAS)을 제안한다. DRAS 기법은 하나의 메모리 랭크 (Rank)를 두 개의 서브랭크 (Sub-rank)로 동작되도록 하여, 데이터가 절반 크기로 압축될 경우 압축된 데이터를 하나의 서브랭크에만 저장한다. 이를 통해 DRAS 기법은 압축된 데이터에 대한 읽기 및 쓰기 동작의 메모리 대역폭을 두 배로 높일 수 있고, 동적 전력 소모도 절반으로 감소시킬 수 있다. 만약 데이터가 절반 크기로 압축되지 않는다면 기존 메모리 시스템에서와 같이 데이터를 두 서브랭크에 저장한다. 따라서 DRAS 기법은 데이터가 압축되지 않는 경우에 대해서는 기존 메모리 시스템 수준의 메모리 대역폭과 전력 효율성을 보장한다. 메모리 시뮬레이터를 사용한 실험 평가를 통해 DRAS 기법이 컴퓨터 시스템 성능을 평균 12% 향상시키고 메모리 시스템의 전력소모를 평균 24% 감소시킬 수 있음을 보인다.

• 대한전자공학회논문지SD
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• 제43권7호
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• pp.38-49
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• 2006

본 논문에서는 SoC를 검증 및 테스트하기 위한 새로운 개념의 칩을 제안하고 이를 SwToC(System with Test on a Chip)라 명명한다. SwToC는 SoC의 임베디드 프로세서에 재구성 가능한 로직을 추가하여 칩의 물리적인 결함을 테스트할 수 있을 뿐만 아니라 기존의 기법으로는 수행이 어려웠던 테스트 단계에서의 디자인 검증이 가능하도록 한 칩을 말한다. 제안한 개념의 칩은 고속 검증이 가능하며 테스트를 위해 많은 비용이 소모되는 ATE 가 불필요한 장점을 갖고 있다. 제안한 칩의 디자인 검증 및 테스트 기능을 평가하기 위하여 임베디드 프로세서가 내장된 상용 FPGA를 이용하여 SwToC를 구현하였으며, 구현 결과 제안한 칩의 실현 가능성을 확인하였고 적은 비용의 단말기를 통한 테스트가 가능함은 물론 기존의 검증기법에 비해 고속 검증이 가능함을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• ETRI Journal
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• 제25권5호
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• pp.288-296
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• 2003

In this study, we present a 260k color TFT LCD driver chip set that consumes only 5 mW in the module, which has exceptionally low power consumption. To reduce power consumption, we used many power-lowering schemes in the logic and analog design. A driver IC for LCDs has a built-in graphic SRAM. Besides write and read operations, the graphic SRAM has a scan operation that is similar to the read operation of one row-line, which is displayed on one line in an LCD panel. Currently, the embedded graphic memory is implemented by an 8-transistor leaf cell and a 6-transistor leaf cell. We propose an efficient scan method for a 6-transistor embedded graphic memory that is greatly improved over previous methods. The proposed method is implemented in a 0.22 ${\mu}m$ process. We demonstrate the efficacy of the proposed method by measuring and comparing the current consumption of chips with and without our proposed scheme.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권1호
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• pp.14-17
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• 2005

In this paper, an automated methodology for generating model parameters considering real manufacturing processes is presented with verified results. In addition, the outcomes of applications to the next generation of flash memory devices using the parameters calibrated from the process specification decision are analyzed. The test vehicle is replaced with a well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for a flash memory device. The calibration errors are less than 5% of a full chip operation, which is acceptable to designers. The results of the calibration are then used to predict the I-V curves and the model parameters of various transistors for the design of flash devices.

• 대한전자공학회논문지SD
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• 제42권10호
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• pp.1-8
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• 2005

본 논문에서는 강유전체 메모리의 셀 효율을 높이기 위해 PMOS-gating 셀을 이용한 설계기법을 기술하였다. PMOS-gating 셀은 PMOS access 트랜지스터와 강유전체 커패시터로 이루어지며 커패시터의 플레이트는 ground에 고정된다. 아울러 read/write 동작시 비트라인이 $V_{DD}$로 precharge 되고, negative 전압 워드라인 기법이 사용되며, negative 펄스 restore 동작을 이용한다. 이는 셀 플레이트 구동없이 단순히 워드라인과 비트라인만 구동하여 메모리 셀의 데이타를 저장하고 읽어낼 수 있는 설계 방식으로, 기존의 셀 플레이트를 구동하는 FRAM 대비 메모리 셀 효율을 극대화 할 수 있어, multi-megabit 이상의 집적도에서 경쟁력 있는 칩 면적 구현이 가능하다. $0.25-{\mu}m$ triple-well 공정을 적용한 2.5-V, 1-Mb FRAM 시제품 설계를 통해 제안한 설계기술을 검증하였고, 시뮬레이션 결과 48 ns의 access time, 11 mA의 동작전류 특성을 보였다. 레이아웃 결과 칩 면적은 $3.22\;mm^{2}$ 이며, 기존의 셀 플레이트 구동기를 사용하는 FRAM 대비 약 $20\;\%$의 셀 효율을 개선하였다.

• 한국전자파학회지:전자파기술
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• 제24권2호
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• pp.51-57
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• 2013

The current expanding mobile markets incessantly demands small form factor, low power consumption and high aggregate throughput for silicon-level integration such as memory to logic system. One of emerging solution for meeting this high market demand is 3D through silicon stacking (TSS) technology. Main challenges to bring 3D TSS technology to the volume production level are establishing a cost effective supply chain and building a reliable manufacturing processes. In addition, this technology inherently help increase number of IOs and shorten interconnect length. With those benefits, however, potential signal and power integrity risks are also elevated; increase in PDN inductance, channel loss on substrate, crosstalk and parasitic capacitance. This paper will report recent progress of wide IO memory to high count TSV logic device assembly development work. 28 nm node TSV test vehicles were fabricated by the foundry and assembled. Successful integration of memory wide IO chip with less than a millimeter package thickness form factor was achieved. For this successful integration, we discussed potential signal and power integrity challenges. This report demonstrated functional wide IO memory to 28 nm logic device assembly using 3D package architecture with such a thin form factor.

• 로봇학회논문지
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• 제4권1호
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• pp.1-9
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• 2009

Radio Frequency Identification (RFID) is an automatic identification method. Information such as identification, logistics history, and specification of products are written and stored into the memory of RFID tags (that is, transponders), and retrieved through RF communication between RFID reader device and RFID tags. RFID systems have been applied to many fields of transportation, industry, logistics, environment, etc in order to improve business efficiency and reduce maintenance cost as well. Recently, some research results are announced in which RFID devices are combined with other sensors for mobile robot localization. In this paper, design of multi-protocol baseband for RFID reader device is proposed, and the baseband modem is implemented into SoC (System On a Chip). The baseband modem SoC for multi-protocol RFID reader is composed of several IP (Intellectual Property) blocks such as multi-protocol blocks, CPU, UART(Universal Asynchronous Receiver and Transmitter), memory, etc. As a result, the SoC implemented with FPGA(Field Programmable Gate Array) is applied to real product. It is shown that the size of RFID Reader module designed with the FPGA becomes smaller, and the SoC chip price for the same function becomes cheap. In addition, operation performance could be the same or better than that of the product with no SoC applied.

• 정보처리학회논문지D
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• 제9D권6호
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• pp.1097-1104
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• 2002

기존의 데이터베이스관리시스템(Database Management System : DBMS)은 대부분 메인 프레임 컴퓨터 이상의 컴퓨터와 같은 강력한 컴퓨터에 설치되고, 이 컴퓨터에 터미널을 연결하여 운용하는 방식이 대부분이었다. 최근 들어 저렴하고 강력한 워크스테이션과 초고속의 통신장비 등장으로 클라이언트-서버 DBMS구조는 많은 사람들에 의해서 연구되고 있다. 그러나. 클라이언트-서버 DBMS의 고장회복에 관한 연구는 아직까지 깊이 있게 연구되지 않고 있는 실정이다. 본 논문은 클라이언트-서버 환경 중 페이지-서버 환경의 회복기법에 관해서 논한다. 제한된 기법은 서버파손이 발생할 경우 페이지별로 로그일련번호 부여로 신속히 회복을 수행할 수 있고, 클라이언트에서 철회동작을 수행함으로써 시스템 병렬성을 사용하였다. 그리고 기존의 방법과 달리 재수행 로그레코드만을 서버로 전송하므로 WAL(Write Ahead log) 규약을 위한 오버헤드가 감소되었다.