• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.764-768
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• 2002

Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.279-284
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• 2003

The $CoSi_2$ process is widely employed in a salicide as well as an ohmic layer process. In this experiment, we investigated the characteristics of $CoSi_2$ films by combinations of I-type (TiN 100$\AA$/Co 150$\AA$), II-type(TiN 100$\AA$/Co 150$\AA$/Ti 50$\AA$), III-type(Ti 100$\AA$/Co 150$\AA$/Ti 50$\AA$), and IV-type(Ti 100$\AA$/Co 150$\AA$/Ti 100$\AA$). Sheet resistances of $CoSi_2$ show the lowest resistance with 2.9 $\Omega$/sq. in a TiN/Co condition and much higher resistances in conditions simultaneously applying Ti capping layers and Ti interlayers. Though we couldn't observe a $CoSi_2$roughness dependence on the film stacks from RMS values, Ti capping layers turned into 78∼94$\AA$ thick TiN layers of (200) preferred orientation at $N_2$ambient. In addition, Ti interlayers helped to form the epitaxial $CoSi_2$with (200) preferred orientation and ternary compounds of Co-Ti-Si. We propose that film structures of II-type and III-type may be appropriate in the salicide process and the ohmic layer process from the viewpoint of Co diffusion kinetics and the CoSi$_2$epitaxy.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.87-93
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• 1994

Ohmic contacts between Au and p-HgHg_{0.7}Cd_{0.3}Te$ with low specific contact resistance have been obtained. The contact region of the wafer is first pre-heated for 5 seconds in a rapid thermal processing equipment. The temperature reaches a maximum value of about 200$^{\circ}C$ at the end of the 5 seconds. Next, a thin Au film is formed on the contact region by immersing the sample in AuCl$_{3}$ solution. the sample is then post-annealed in the same condition as the pre-heating after Pb/In pad metals are deposited on the electroless Au contacts. The specific contact resistance measured by transmission line model is 5${\times}10^{-3}{\Omega}cm^{2}$ at 80K. RBS and differential Hall measurement data suggest that the above low resistance ohmic contact is ascribed to surface traps and increased gold diffusion rate.

• Journal of Environmental Science International
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• v.23 no.6
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• pp.1175-1182
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• 2014

In this study, we examined the effect of cathode from electrolysis reactor for treating ballast water. We are going to select a suitable cathode for seawater electrolysis after considering the effect on the generation of the oxidant of cathode and the electrode deposition materials adhering to the surface of cathode. Anode is Ru-Ti-Pd electrode and cathode are Ti, Pt, JP520 (Ni-Pt-Ce) electrodes. Using the cathode of the three types, experiments were conducted to examine the effects of TRO (total residual oxidants) generation concentration and RNO (N, N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical) degradation concentration (in 1, 35 psu), ohmic drop, FESEM(field emission scanning electron microscope) observation of cathode surface and EDX (energy dispersive X-ray spectroscopy) measurements of attached fouling material. The results showed that TRO generation concentration and RNO degradation concentration in according to each type of cathode are not different. The attached fouling materials were observed on the surface of Ti and the JP520 electrode by the observation of SEM after electrolysis for two hours, but it was not observed on the surface of Pt electrode. When considering the surface ohmic drop of cathode and the attached fouling materials, Pt electrode was judged as the excellent cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Korean Journal of Food Science and Technology
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• v.28 no.4
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• pp.638-643
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• 1996

The efficiency of dewatering of soybean milk residue was improved by hydraulic pressing after pH adjustment to 4.5 with organic acids such as acetic and lactic acids. Water content of raw soybean milk residue was reduced from 80% to 72% by pressing after pH adjustment, while only to 78% by the conventional hydraulic press. The water content of the residue after pH adjustment was further reduced to 63% by hydraulic pressing with ohmic heating. The pH adjustment facilitated separation of cake from the filter cloth and reduced the solid content of the expressed liquid from 10 to 3%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.197-200
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• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and $N_2$ gas ambient annealing method at $950^{\circ}C$ for 10 min. The specific contact resistivity ( $\rho_{c}$ ), sheet resistance($R_s$), contact resistance($R_c$), transfer length($L_T$) were calculated from resistance($R_T$) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho_{c}=3.8{\times}10^{-5}\Omega cm^{3}$, $R_{c}=4.9{\Omega}$, $R_{T}=9.8{\Omega}$ and $L_{T}=15.5{\mu}m$, resulting average values of another sample were $\rho_{c}=2.29{\times}10^{-4}\Omega cm^{3}$, $R_{c}=12.9{\Omega}$ and $R_{T}=25.8{\Omega}$. The physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.

• Applied Chemistry for Engineering
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• v.31 no.5
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• pp.568-574
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• 2020

Gas diffusion layer (GDL) is one of the main components of PEMFC as a pathway of reactants from a flow field to an electrode, water transport in reverse direction, heat management and structural support of MEA. In this study, the effect of GDL on fuel cell performance was investigated for commercial products such as 39BC and JNT30-A3. Polarization curve measurements were performed at different flow rates and relative humidity conditions using 25 ㎠ unit cell. The parameters on operating conditions were calculated using an empirical equation. The electrical resistance increased as the GDL PTFE content increased. The crack of microporous layer had influence on the concentration loss as water pathway. In addition, the ohmic resistance increased as the relative humidity decreased, but decreased as the current density increased due to water formation. Curve fitting analysis using the empirical equation model was applied to identify the tendency of performance parameters on operating conditions for the gas diffusion layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.717-723
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• 2009

Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.