• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.521-524
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• 2001

In this letter, we report on the investigation of Ti, Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 500$^{\circ}C$ for 1h, 950$^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific contact resistivities in the 3.5x10$\^$-3/ and 6.2x10$\^$-4/ ohm/$\textrm{cm}^2$, and the physical properties of the contacts were examined using x-ray diffraction, microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.557-563
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• 2003

SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.449-454
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• 2002

The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.

• 한국표면공학회지
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• 제43권2호
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• pp.47-50
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• 2010

This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{\circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{\circ}C$ after using Pt I bath at 50~$65^{\circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.179-180
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• 2007

반도체의 최소 회로 선폭이 감소함에 따라 Contact 저항이 크게 증가하게 된다. Contact 저항을 낮추기 위하여 Tungsten Metal Contact을 일반적으로 사용하며, Si 기판과의 Ohmic 접촉 및 WF6의 Fluorine과 Si 반응을 억제하기 위한 Barrier Metal로 Ti/TiN 이중막을 사용한다. 본 논문에서는 90nm급 이하 제품의 CVD Ti/TiN Barrier Metal이 유발하는 불량 현상과 원인 규명에 대하여 연구하였으며, Ohmic Contact형성을 위해 TiSix형성 최적화 방안에 대해 정리하였다.

• 한국재료학회지
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• 제25권3호
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• pp.119-124
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• 2015

This paper investigates the change of the percolation threshold in the carbon powder-filled polystyrene matrix composites based on the experimental results of changes in the resistivity and relative permittivity of the carbon powder filling, the electric field dependence of the current, and the critical exponent of conductivity. In this research, the percolation behavior, the critical exponent of resistivity, and electrical conduction mechanism of the carbon powder-filled polystyrene matrix composites are discussed based on a study of the overall change in the resistivity. It was found that the formation of infinite clusters is interrupted by a tunneling gap in the volume fraction of the carbon powder filling, where the change in the resistivity is extremely large. In addition, it was found that the critical exponent of conductivity for the universal law of conductivity is satisfied if the percolation threshold is estimated at the volume fraction of carbon powder where non-ohmic current behavior becomes ohmic. It was considered that the mechanism for changing the gaps between the carbon powder aggregates into ohmic contacts is identical to that of the connecting conducting phases above the percolation threshold in a random resister network system. The electric field dependence is discussed with a tunneling mechanism. It is concluded that the percolation threshold should be defined at this volume fraction (the second transition of resistivity for the carbon powder-filled polystyrene matrix composites) of carbon powder.

• 전력전자학회논문지
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• 제24권5호
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• pp.365-371
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• 2019

This study shows the feasibility of the parameter of the 1st RC parallel equivalent circuit as a factor of the heat generation of lithium-ion cell. The internal resistance of a lithium-ion cell consists of ohmic and polarization resistances. The internal resistances at various SOCs of the lithium-ion cell are obtained via an electrical characteristic test. The internal resistance is inversely obtained through the amount of heat generated during the experiment. By comparing the resistances obtained using the two methods, the summation of ohmic and polarization resistances is identified as the heating factor of lithium-ion battery. Finally, the amounts of heat generated from the 2C, 3C, and 4C-rate discharge experiments and the COMSOL multiphysics simulation using the summation of ohmic and polarization resistances as the heating parameter are compared. The comparison shows the feasibility of the electrical parameters of the 1st RC parallel equivalent circuit as the heating factor.

• 한국재료학회지
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• 제9권10호
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• pp.1012-1017
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• 1999

Si 도핑된 n-$\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$($1.63\times10^{19}\textrm{cm}^{-3}$)에 W을 이용하여 낮은 접촉저항을 갖는 Ohmic 접촉을 형성시켰다. 열처리 온도를 증가시킴에 따라 비접촉 저항이 낮아졌으며, 가장 낮은 비접촉 저항은 $950^{\circ}C$의 질소분위기 하에서 90초간 열처리 해줌으로써 $2.75\times10^{-8}\Omega\textrm{cm}^{-3}$의 낮은 비접촉 저항값을 얻었다. 열처리 온도증가에 따른 $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$와 W의 계면반응과 W의 표면은 XRD와 SeM을 이용하여 분석하였다. XRD 분석을 통하여 W과 $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$이 반응하여 계면에 $\beta$-$W_2N$ 상을 형성시킴을 확인할 수 있었다. SEM 분석결과 W 표면은 $850^{\circ}C$의 높은 열처리온도에서도 안정한 상태를 유지하였다. W과 InGaN의 Ohmic 접촉에 있어 비접촉 저항은 열처리 온도를 증가시킴에 따라 낮아지게 되는 온도 의존성을 갖는데 이에 대한 가능한 기구를 제시하였다.

• 한국축산식품학회:학술대회논문집
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• 한국축산식품학회 1997년도 임시총회 및 제20차 추계학술발표회
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• pp.31-39
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• 1997

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제16회 학술발표회 논문개요집
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• pp.55-55
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• 1999