Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of Non-alloyed Mo Ohmic Contacts to Laser Activated p-type SiC

레이저 활성화에 의한 p형 Sic와 비합금 Mo 오믹 접합

  • 이형규 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 이창영 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 송지헌 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 최재승 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 이재봉 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 김기호 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 김영석 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소) ;
  • 박근형 (충북대학교 전기전자컴퓨터공학부 및 컴퓨터정보통신연구소)
  • Published : 2003.07.01
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Abstract

SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.

Keywords

References

  1. Semiconductors and Semimetals v.52 SiC Materials and Devices Yoon Soo Park(ed.)
  2. IEEE Trans. on ED v.46 no.3 Detailed investgation of n channel enhancement 6H-SiC MOSFET's R.Schorner;P.Friedrichs;D.Peters https://doi.org/10.1109/16.748873
  3. IEEE Trans. on ED v.45 no.1 6H-SiC CMOS digital ICs operating on a 5V power supply S.Ryu;K.T.Kornegay;J.A.Cooper,Jr.;M.R.Melloch https://doi.org/10.1109/16.658810
  4. 전기전자재료학회논문지 v.1 no.7 고온 응용을 위한 SiC MOSFET 문턱전압 모델 이원선;오충완;최재승;신동현;이형규;박근형;김영석 https://doi.org/10.4313/JKEM.2002.15.7.559
  5. IEEE Electron Device Letters v.18 no.7 Thin-oxide silicon-gate selfaligned 6H-SiC MOSFET's fabricated with a low-temperature source/drain implant activation anneal J.N.Pan;J.A.Cooper,Jr;M.R.Melloch https://doi.org/10.1109/55.596933
  6. J. Electronic Materials v.25 no.5 Aluminum and boron ion implantations into 6H-SiC epilayers T.Kimoto;A.Itoh;H.Matsunami;T.Nakata;M.Watanabe https://doi.org/10.1007/BF02666653
  7. J. Electronic Materials v.27 no.4 Dopant activation and surface morphology of ion implanted 4H-and 6H-Silicon Carbide M.A.Capano;S.Ryu;M.R.Melloch;J.A.Cooper,Jr;M.R.Buss https://doi.org/10.1007/s11664-998-0417-4
  8. IEEE Trans. on ED v.49 no.1 Formation of titanium silicide on narrow gates using laser thermal processing G.Verma;C.Gelatos,S.Talwar;J.C.Bravman
  9. Solid-State Electronics v.42 no.4 Selective laser annealing (SELA) used in the fabrication of sub-0.1㎛ MOSFETs H.Tsukamoto;T.Suzuki https://doi.org/10.1016/S0038-1101(97)00208-6
  10. Appl. Phys. Lett. v.66 no.6 Activation of ion implanted dopants in α-SiC S.Ahmed;C.Barbero;T.W.Sigmon https://doi.org/10.1063/1.114108
  11. Silicon Carbide and Related Materials V-Washington 1993, Inst. Phys. Conf. Ser. v.137 Metal contacts to n and p type 6H-SiC: electrical characteristics and high-temperature stability J.B.Petit;P.G.Neudeck;C.S.Salupo;D.J.Larkinl;J.A.Powell
  12. Tech. Dig. of Int'l Conf. on SiC and Related Materials-ICSCRM 2001 Abnormal hysteresis property of SiC oxide C-V characteristics J.S.Choi;W.S.Lee;D.H.Shin;H.G.Lee;Y.S.Kim;K.H.Park
  13. Solid State Electronics v.25 no.2 The effects of contact size and non-zero metal resistance on the determination of specific contact resistance G.S.Marlow;M.B.Das https://doi.org/10.1016/0038-1101(82)90036-3
  14. Applied Surface Science v.184 Numerical and experimental analysis of pulsed excimer laser processing of silicon carbride C.Dutto;E.Fogarassy;D.Mathiot https://doi.org/10.1016/S0169-4332(01)00518-9
  15. Appl. Phys. Lett. v.74 no.22 In situboron incorporation and activation in silicon carbide using laser recrystallization S.D.Russell;A.D.Ramirez https://doi.org/10.1063/1.123347
  16. Physics of Semiconductor Devices(2nd Ed.) S.M.Sze
  17. Appl. Phys. Lett v.62 no.4 Contact resistance mesurements on p type 6H-SiC J.Crofton;P.A.Barnes;J.R.Williams;J.A.Edmond https://doi.org/10.1063/1.108964
  18. 충북대학교 석사학위논문 레이저 어닐링 공정을 도입한 SiC MOSFET 제작 송지헌