• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.801-802
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• 1992

Poly Si TFTs have been fabricated from low temperature annealed a-Si films. I-V and C-V characteristics in the off-state region were measured. Analytical model for the leakage current in the off-state was suggested. In the measurement, capacitance increased abruptly with Increasing gate and drain voltage. This phenomena is attributed to the leakage current.

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.6
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• pp.610-619
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• 2000

This paper presents an off-line UPS using the high temperature superconductive magnetic bearing. FES(Flywheel Energy Storage) system has good advantages in compare with lead acid battery. So, high efficiency FES using high temperature SMB(superconductive magnetic bearing) was composed in this paper. The outer rotor type of PMSM(Permanent Magnet Synchronous Motor) as motor/generator was used for the experiment, and square wave current and sinusoidal wave control methods was compared for high efficiency operation of motor/generator. The circuit for in phase sinusoidal wave current control with EMF in the full speed range was designed and the proposed flywheel energy storage system was applied in single phase off-line UPS system. As the stable operation characteristics of prototype system was confirmed, the its excellence as energy storage device in Off-line UPS was proved.

• 한국해양학회지
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• v.16 no.1
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• pp.1-11
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• 1981

The seasonal variations of surface current patterns in the Japan Sea were drawn out from the results of drift bottle experiments, current measurements and hydrographic observations during 1979∼1980. The North Korean Cold Current(NKCC) and the East Korean Warm Current(EKWC) were common features of circulation in the eastern sea of Korea. The intrusion of NKCC along the Korean coast became strong in summer(average velocity of 47.4cm/sec off Jumunjin and 23.4cm/sec near Jugbyeon) when the Tsushima Current was strong. But there was no indication of the NKCC in November 1979. Dynamic topography(August & November 1979) and satellite picture(November 1979) seemed to show the topographic steering of EKWC beginning off Janggigab. Drift bottles arrived at the Japaness coast were affected significantly by the strong Tsushima Current in summer and by the predominant northwesterlies in winter instead of weak current.

• Journal of Power Electronics
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• v.3 no.4
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• pp.215-223
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• 2003

In this paper, a new zero-current-transition (ZCT) circuit cell is proposed. The main switch is turned-off under the zero current and zero voltage condition, and there is no additional current stress and voltage stress in the main switch and the main diode, respectively. The auxiliary switch is turned-off under the zero voltage condition, and the main diode is turned-on under the zero voltage condition. The resonant current required to obtain the ZCT condition is relatively small and regenerated to the input voltage source. The operational principles of a boost converter integrated with the proposed ZCT circuit cell are analyzed and verified by the simulation and experimental results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.7
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• pp.1617-1622
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• 2015

This paper analyzes the ratio of tunneling current for channel doping concentration of sub-10 nm asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current in subthreshold region increases in the region of channel length of 10 nm below. Even though asymmetric DGMOSFET is developed to reduce short channel effects, the increase of tunneling current in sub-10 nm is inevitable. As the ratio of tunneling current in off current according to channel doping concentration is calculated in this study, the influence of tunneling current to occur in short channel is investigated. To obtain off current to consist of thermionic emission and tunneling current, the analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for channel doping concentration in sub-10 nm asymmetric DGMOSFET, specially with parameters of channel length, channel thickness, and top/bottom gate oxide thickness and voltage.

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.1
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• pp.53-58
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• 2002

New nondestructive inspection (NDI) technique to detect the defect in metal was developed in which an electromagnetic field is induced in a metal by AC current flowing in the magnetic coil and the leak magnetic-flux disturbed by defects is measured using a tape-recorder head with air gap. This technique can be applied in evaluating the location and sizing of surface defects in components of the ferromagnetic body by means of the non-contacting measurement. In this paper, we have applied this technique to the evaluation of two-dimensional surface cracks in ferromagnetic metal, and also investigated the influence of the various frequencies and lift-off. Defects were detected with maximum values in the distribution of voltage and it was found that the maximum values tend to increase with the defect depth. Although the maximum values for defects are affected by the frequency and lift-off, the depth of small defects can be estimated from the linear relationship between the depth and voltage rate$(V_0/V_{ave})$.

• The Transactions of the Korean Institute of Power Electronics
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• v.1 no.1
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• pp.38-46
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• 1996

The commutation operation of the current source converter for switched reluctance motor drives is analyzed in this paper. The commutation operation in the current source converter consists of two modes. At turn-off of phase switch, the phase current decreases sinusoidally, and the sum of two phase currents during commutation period is constant. At this time, the capacitor voltage increases quickly with changing polarity and decreases slowly when another phase switches turn on or off. Frequency of step-down DC chopper in the current source converter is low because of the dump such as BJTs and GTOs are possible as phase switches instead of Power MOSFET and IGBTS. They may result in reductions of conduction losses and manufacturing cost in the current source converter comparing to the voltage source converter of SRM.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.244-250
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• 1994

This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.350-350
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• 2012

본 연구에서는 Oxide 두께가 각각 4, 6 nm인 Symmetric NMOSFET의 전기적 특성 분석에 관한 연구를 진행하였다. 게이트 전압에 따른 Drain saturation current (IDSAT), Threshold Voltage(VT) 및 드레인 전압에 따른 Off-states 특성 변화를 분석하였다. 소자 측정 결과 oxide 두께가 4 nm인 경우 Vt는 0.3 V, IDSAT은 73 ${\mu}A$ (@VD=0.05)로, oxide 두께가 6 nm인 경우 Vt는 0.65 V, IDSAT은 66 ${\mu}A$ (@VD=0.05)로 각각 측정되었다. 이는 oxide 두께가 얇은 경우 게이트 전압 인가 시 Electric field 증가에 따른 것으로 판단된다. 또한 드레인 전압 인가에 따른 소자 특성 분석 결과 oxide 두께가 4nm인 경우 급격한 Gate leakage 증가를 보였으며, 이에 따라 Off-state에서의 leakage current가 증가함을 확인하였다. 본 연구는 Oxide 두께에 따른 MOSFET 소자의 전기적 특성 분석을 위해 진행되었으며, 상기 결과와 같이 oxide 두께 가변은 Idsat, Vt, leakage current 등의 주요 파라미터에 영향을 주어 NMOSFET 소자의 전기적 특성을 변화시킴을 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.1
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• pp.13-18
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• 1999

The trap density by the stress bias in silicon oxides with different thicknesses has been investigated. The trap density by stress bias was shown to be composed of on time current and off time current. The on time trap density was composed of dc current. The off time trap density was caused by the tunneling charging and discharging of the trap in the interfaces. The on time trap density was used to estimate to the limitations on oxide thicknesses. The off time trap density was used to estimate the data retention in nonvolatile memory devices.