Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Analysis of the Leakage Current in Poly Si TFTs

다결정 실리콘 박막트랜지스터의 누설전류 해석

  • Lee, In-Chan (Dept. of Electrical Eng., Gyeongsang Nat'l Univ.) ;
  • Ma, Tae-Young (Dept. of Electrical Eng., Gyeongsang Nat'l Univ.) ;
  • kim, Sang-Hyun (Dept. of Electrical Eng., Gyeongsang Nat'l Univ.)
  • Published : 1992.07.23
Download PDF
⟨ Previous Next ⟩

Abstract

Poly Si TFTs have been fabricated from low temperature annealed a-Si films. I-V and C-V characteristics in the off-state region were measured. Analytical model for the leakage current in the off-state was suggested. In the measurement, capacitance increased abruptly with Increasing gate and drain voltage. This phenomena is attributed to the leakage current.

Keywords