• Journal of Advanced Marine Engineering and Technology
• /
• 제22권5호
• /
• pp.617-625
• /
• 1998

A passive energy recovery snubber for high-power-factor boost rectifier, in which the main switch is implemented with a MOSFET, is described in terms of the equivalent circuits that are operational during turn-on and turn-off sequences. These equivalent circuits are analyzed so that the overshoot voltage across the main switch, the snubber current, and the turn-off transition time can be predicted analytically. From these results, the normalized overshoot voltage is reduced to 1 as $_W2T_on$ varies from zero to $\pi$/2, and then it is fIxed at 1 for $_W2T_on$> $\pi$/2. The peak snubber inductor current is directly proportional to the input current. The turn-offtransition time wltoffvaries from 0 to 2.57, depending on $_W2T_on$. The main switch combined with proposed snubber can be turned on with zero current and turned off at limited voltage stress. The high-power-factor boost rectifier with proposed snubber is implemented, and the experimental results are presented to confirm the validity of proposed snubber.

• 전기학회논문지
• /
• 제60권11호
• /
• pp.2043-2048
• /
• 2011

High speed drive method for a fuel injector cleaner with current control is presented in this paper. The fuel injector cleaner is used for cleaning the fuel injectors in vehicles when it is clogged with deposit and rust. The fuel injector cleaner cleans the fuel injector by turning on and off the fuel injector rapidly. When the fuel injectors are cleaned, the switching speed is very important. However, when the fuel injector is turned off, the residual current in the fuel injector coil slows down the return action of the plunger in the fuel injector deteriorating performance and speed of the fuel injector cleaner. In this paper, fast turn off operation method of fuel injectors is developed for more effective cleaning. The simulation and experiment results show the validity of the proposed method.

• 전기학회논문지
• /
• 제68권4호
• /
• pp.593-597
• /
• 2019

We proposed a current Interruption type DC superconducting circuit breaker(I-DC SCB), a protection device that combines the current limiting technology of a superconductor with the cut-off technology of circuit breaker. Unlike existing protective devices, the current I-DC SCB is a device that combines two protection functions, notably improving failure probability and operational reliability. It is also applicable to all DC systems, such as HV, MV, and LVDC, due to the ease in capacity increase. The 100 kV I-DC SCB was designed after taking into account the actual power system conditions, followed by an analysis of the transient characteristics and the breaking range of the limiter. The results of the analysis showed that the I-DC SCB had a fault current limit of about 75% at the rated voltage, and completed the cut-off operation within about 20 ms.

• 조명전기설비학회논문지
• /
• 제16권5호
• /
• pp.61-65
• /
• 2002

SRM 토크는 인덕턴스 프로파일과 전류에 의해 발생한다. 발생한 SRM 토크는 전류제어시 turn-off 각을 제어함으로써 최대화 할 수 있고, 본 논문에서는 최소자승법을 이용하여 구한 함수를 통해 Turn-off 각을 제어할 수 있는 방안을 제안하였다. 시뮬레이션은 3상 6/4극 SRM을 대상으로 하였고, 제안한 방법에 의해 최대 평균토크가 됨을 시뮬레이션을 통해 증명하였다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
• /
• 제50권7호
• /
• pp.356-363
• /
• 2001

A SRG (Switched Reluctance Generator) has many advantages such as high efficiency, low cost, high-speed capability and robustness compared with other of machine. But the control methods that have been adopted for SRGs are complicated. This paper proposes a simple control method using the PID controller which only controls turn-off angles while keeping turn-on angles of SRG constant. In order to keep the output voltage constant, the turn-off angle for load variations is controlled by using linearity between the generated current and turn-off angle since the reference generated current can be led through the voltage errors between the reference and the actual voltage. The suggested control method enhances the robustness of this system and simplifies the hardware and software by using only the voltage and the speed sensors. The proposed method is verified by experiments.

• Journal of Power Electronics
• /
• 제7권1호
• /
• pp.81-88
• /
• 2007

This paper presents a new approach to the automatic control of the turn-off angle used to excite the Switched Reluctance Motor (SRM) employed in electric vehicles (EV). The controller selects the turn-off angle that supports and improves the performance of the motor drive system. This control scheme consisting of classical current control and speed control depends on a lookup table to take the best result of the motor. The turn-on angle of the main switches of the inverter is fixed at $0^{\circ}C$ and the turn-off angle is variable depending on the reference speed. The motor, inverter and control system are modeled in Simulink to demonstrate the operation of the system.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
• /
• pp.294-298
• /
• 2003

In this paper, the new zero-current-transition (ZCT) circuit cell is proposed. The main switch is turned-off under the zero current and zero voltage condition, and there is no additional current stress and voltage stress in, the main switch and the main diode. The Auxiliary switch is turned-off under the zero voltage condition, and the main diode is turned-on under the zero voltage condition, The resonant current required to obtain the ZCT is small and regenerated to the input voltage source. The operational principles of the boost converter integrated with the proposed ZCT circuit cell is analyzed theoretically and verified by the simulation and experimental result. Index terms - zero-current-transition (ZCT), zero-current- switching (ZCS), zero-voltage-switching (ZVS)

• 한국전기전자재료학회논문지
• /
• 제24권7호
• /
• pp.525-531
• /
• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• 전자공학회논문지A
• /
• 제31A권9호
• /
• pp.104-113
• /
• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• 한국전기전자재료학회논문지
• /
• 제22권2호
• /
• pp.107-113
• /
• 2009

In order to improve air stability, we proposed a new active layer of an organic TFT by synthesizing P3HT/POSS conjugated polymer. P3HT/POSS OTFTs with the various P3HT/POSS volume ratios were fabricated and characterized. With the P3HT/POSS volume ratio of 1:1, we achieved the field-effect mobilities of ${\sim}1.19{\times}10^{-3}\;cm^2/v{\cdot}sec$ in the saturation region and the current on/off ratio of ${\sim}2.51{\times}10^2$. The resulting current on-off ratio was much higher than that of the P3HT-based OTFTs and resulted from the dramatic decrease of the off-current. Since the off-current can be reduced by preventing oxygen in atmosphere from doping the P3HT/POSS active layers, this new active layer shows its ability to avoid oxygen doping in atmosphere. Therefore, the improvement of the air stability can be achieved by employing the P3HT/POSS active layers.