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Correlation between Real-Time and Off-Time Subjective Assessments and Physiological Responses for Visual Picture Stimulus (시각자극에 대한 실시간 및 비 실시간 주관적 평가와 생리반응과의 상관관계)

  • Jeong, Sun-Cheol;Min, Byeong-Chan;Min, Byeong-Un;Kim, Sang-Gyun;O, Ji-Yeong;Kim, Yu-Na;Kim, Cheol-Jung;Park, Se-Jin
    • Journal of the Ergonomics Society of Korea
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    • v.18 no.3
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    • pp.27-39
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    • 1999
  • The purpose of this study was to approve the capability of human sensibility evaluation based on physiological responses and real-time subjective assessments. Three well-trained healthy human subjects were participated in the experiments. We measured physiological responses such as Heart Rate Variability(HRV), Galvanic Skin Response(GSR) and skin temperature under rest and visual stimulation conditions, respectively. Off-time subjective assessments were recorded before and after visual stimulations. Real-time subjective assessments were recorded during visual stimulations. The results of physiological responses and off-time and real-time subjective assessments were quantified and compared. The results showed that the correlation between physiological responses and real-time subjective assessments was high (83%) for both the positive and negative visual stimulation. The correlation between the physiological responses and off-time subjective assessments was high (83%) for the negative visual stimulation but was low (15%) for the positive visual stimulation. Although the current observation is preliminary and requires more careful experimental study, it appears that the correlation between real-time subjective assessment and physiological responses is higher than that of the off-time subjective assessment and physiological responses.

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Response Surface Approach to Integrated Optimization Modeling for Parameter and Tolerance Design (반응표면분석법을 이용한 모수 및 공차설계 통합모형)

  • Young Jin Kim
    • Journal of Korean Society for Quality Management
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    • v.30 no.4
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    • pp.58-67
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    • 2002
  • Since the inception of off-line quality control, it has drawn a particular attention from research community and it has been implemented in a wide variety of industries mainly due to its extensive applicability to numerous real situations. Emphasizing design issues rather than control issues related to manufacturing processes, off-line quality control has been recognized as a cost-effective approach to quality improvement. It mainly consists of three design stages: system design, parameter design, and tolerance design which are implemented in a sequential manner. Utilizing experimental designs and optimization techniques, off-line quality control is aimed at achieving product performance insensitive to external noises by reducing process variability. In spite of its conceptual soundness and practical significance, however, off-line quality control has also been criticized to a great extent due to its heuristic nature of investigation. In addition, it has also been pointed out that the process optimization procedures are inefficient. To enhance the current practice of off-line quality control, this study proposes an integrated optimization model by utilizing a well-established statistical tool, so called response surface methodology (RSM), and a tolerance - cost relationship.

A STUDY ON A CATALYTIC CONVERTER OBD BEFORE LIGHT-OFF

  • Yun, Seung-Won;Son, Geon-Seog;Lee, Kwi-Young
    • International Journal of Automotive Technology
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    • v.3 no.1
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    • pp.33-40
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    • 2002
  • Increasingly stringent emission regulations of EU and CARB (California Air resource Board) require mandatory OBD (On Board Diagnostics) far the catalytic converters of a vehicle. It demands that MIL(Malfunction Indication Light) should be tuned on to inform the driver of catalytic converter failures. Currently dual oxygen sensor method Is widely used for the converter OBD. However, since it works only alter converter light-off, it has a serious limitation when applied to TLEV or more stringent emission regulations where more than 85% of total emission is coming out before converter light-off. In addition, a recent development in catalyst material. coating technology and additive catalysts leads to a much improved OSC (Oxygen Storage Capacity) after converter light-off, current methods are very difficult to determine levels of converter aging. Therefore, it is desired to develop an OSC detecting method before converter light-off to diagnose converter failures with higher reliability. In this study, OSCs of converters are measured by an absolute measuring method and a dynamic measuring method, and some of fundamental ideas are suggested about converter OBD before converter light-off. The converters are aged with two different aging methods; those are a furnace aging and an engine bench aging: to represent aging conditions in actual field applications. Dual oxygen sensor method at the lower temperature than light-off is also studied at a model gas bench with the converters. It is fecund that there is a certain point in temperature lower than light-off where difference due to aging level becomes maximum, thus a proper dynamic method to effectively monitor catalytic converters could be implemented fur the range lower than light-off temperatures. With this result, the aging level of converters is examined at an engine bench.

Characteristics of Circular β-Ga2O3 MOSFETs with High Breakdown Voltage (>1,000 V) (높은 항복전압(>1,000 V)을 가지는 Circular β-Ga2O3 MOSFETs의 특성)

  • Cho, Kyu Jun;Mun, Jae-Kyong;Chang, Woojin;Jung, Hyun-Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.1
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    • pp.78-82
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    • 2020
  • In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga2O3 are demonstrated. A Si-doped Ga2O3 epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga2O3 substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×109, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga2O3 for power device applications including electric vehicles, railways, and renewable energy.

Development of partial liquefaction system for liquefied natural gas carrier application using exergy analysis

  • Choi, Jungho
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.10 no.5
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    • pp.609-616
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    • 2018
  • The cargo handling system, which is composed of a fuel gas supply unit and cargo tank pressure control unit, is the second largest power consumer in a Liquefied Natural Gas (LNG) carrier. Because of recent enhancements in ship efficiency, the surplus boil-off gas that remains after supplying fuel gas for ship propulsion must be reliquefied or burned to regulate the cargo tank pressure. A full or partial liquefaction process can be applied to return the surplus gas to the cargo tank. The purpose of this study is to review the current partial liquefaction process for LNG carriers and develop new processes for reducing power consumption using exergy analysis. The developed partial liquefaction process was also compared with the full liquefaction process applicable to a LNG carrier with a varying boil-off gas composition and varying liquefaction amounts. An exergy analysis showed that the Joule-Thomson valve is the key component needed for improvements to the system, and that the proposed system showed an 8% enhancement relative to the current prevailing system. A comparison of the study results with a partial/full liquefaction process showed that power consumption is strongly affected by the returned liquefied amount.

A New ZVZCS Converter Applicable to Majority and Minority Carrier Devices (다수 및 소수캐리어 소자에 적용 가능한 영전압영전류 스위칭 컨버터)

  • Ahn Hee-Wook;Kim Hack-Sung
    • The Transactions of the Korean Institute of Power Electronics
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    • v.10 no.5
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    • pp.518-525
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    • 2005
  • The paper proposes a novel ZVZCS PWM converter. It enables the main switch to be turned on/off with both zero voltage and zero current, the auxiliary switch to be turned on/off with ZCS, the rectifier diode to be turned on/off with ZVS. Moreover, this proposed soft switching technique is suitable for not only minority carrier device but also majority carrier semiconductor device. Since auxiliary resonant circuit of the proposed boost converter is placed out of the main power path, therefore, there are no voltage and current stresses on the main switch and diode. The operation of the proposed boost converter is explained and analyzed theoretical and experimentally, from a prototype operating at 100KHz.

An Improved Asymmetric Half-Bridge Converter for Switched Reluctance Motor in Low-Speed Operation with Current Regulated Mode

  • Woothipatanapan, Sakhon;Chancharoensook, Phop;Jangwanitlert, Anuwat
    • Journal of Power Electronics
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    • v.15 no.6
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    • pp.1533-1546
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    • 2015
  • This study presents a novel method for reducing the switching losses of an asymmetric half-bridge converter for a three-phase, 12/8 switched reluctance motor operated in low speed. In particular, this study aims to reduce the switching-off losses of chopping switches in the converter when operated in the current regulated mode (chopping mode). The proposed method uses the mixed parallel operation of IGBT (chopping switch) and MOSFET (auxiliary switch). MOSFET is precisely controlled to momentarily conduct prior to the turn-off interval of the IGBT. Consequently, the voltage across the switches is clamped to approximately zero, substantially decreasing the turn-off switching losses. The analytical expressions of power losses are extensively elaborated. Compared with the conventional asymmetric half-bridge converter, the modified converter can effectively minimize the switching losses. Therefore, the efficiency of the converter is eventually improved. Computer simulation and experimental results confirm the effectiveness of the proposed technique.

A Study on the Diplexer Switch of High Isolation Using Varactor Diode (바랙터 다이오드를 이용한 높은 격리도를 갖는 DIPLEXER 스위치에 관한 연구)

  • Kang Myung-Soo;Park Jun-Seok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.4
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    • pp.178-184
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    • 2005
  • In this paper, using diplexer structure and varactor diode controlled by reverse bias voltage for diplexer switch gives possibilities to improve isolation and current characteristics. 1 have newly designed switch with high isolation by application varactor diode corresponding to capacitor of diplexer. The low-pass filter for proposed tunable diplexer passes the microwave signal in the bandwidth for wireless cellular network systems and high-pass filter passes it in the bandwidth for wireless personal communication services (PCS) network systems. As the capacitance of the low-pass filter increases, the cut-off frequency can be moved to low frequency, so that the switch is on state in cellular bandwidth and off state in the PCS bandwidth, in contrast to, as the capacitance for attenuation characteristic of high-pass filter increases, it can be moved to high frequency, so that the switch is off state and on state in the cellular bandwidth. it is possible to improve isolation and current consumption characteristics by application diplexer design methods and varactor diode. 1 expect that the tunable diplexer circuit and design methods should be able to find applications on MMIC and low temperature copired ceramic (LTCC).

Simulation of channel dimension dependent conduction and charge distribution characteristics of silicon nanowire transistors using a quantum model (양자모델을 적용한 실리콘 나노선 트랜지스터의 채널 크기에 따른 전도 및 전하분포 특성 시뮬레이션)

  • Hwang, Min-Young;Choi, Chang-Yong;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.77-78
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    • 2009
  • We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.

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Analysis of Switching Clamped Oscillations of SiC MOSFETs

  • Ke, Junji;Zhao, Zhibin;Xie, Zongkui;Wei, Changjun;Cui, Xiang
    • Journal of Power Electronics
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    • v.18 no.3
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    • pp.892-901
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    • 2018
  • SiC MOSFETs have been used to improve system efficiency in high frequency converters due to their extremely high switching speed. However, this can result in undesirable parasitic oscillations in practical systems. In this paper, models of the key components are introduced first. Then, theoretical formulas are derived to calculate the switching oscillation frequencies after full turn-on and turn-off in clamped inductive circuits. Analysis indicates that the turn-on oscillation frequency depends on the power loop parasitic inductance and parasitic capacitances of the freewheeling diode and load inductor. On the other hand, the turn-off oscillation frequency is found to be determined by the output parasitic capacitance of the SiC MOSFET and power loop parasitic inductance. Moreover, the shifting regularity of the turn-off maximum peak voltage with a varying switching speed is investigated on the basis of time domain simulation. The distortion of the turn-on current is theoretically analyzed. Finally, experimental results verifying the above calculations and analyses are presented.