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Characteristics of Circular β-Ga2O3 MOSFETs with High Breakdown Voltage (>1,000 V)

높은 항복전압(>1,000 V)을 가지는 Circular β-Ga2O3 MOSFETs의 특성

  • Cho, Kyu Jun (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Mun, Jae-Kyong (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Chang, Woojin (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Jung, Hyun-Wook (RF/Power Components Research Group, Electronics and Telecommunications Research Institute)
  • 조규준 (한국전자통신연구원 RF/전력부품연구실) ;
  • 문재경 (한국전자통신연구원 RF/전력부품연구실) ;
  • 장우진 (한국전자통신연구원 RF/전력부품연구실) ;
  • 정현욱 (한국전자통신연구원 RF/전력부품연구실)
  • Received : 2019.10.31
  • Accepted : 2019.12.04
  • Published : 2020.01.01

Abstract

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga2O3 are demonstrated. A Si-doped Ga2O3 epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga2O3 substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×109, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga2O3 for power device applications including electric vehicles, railways, and renewable energy.

Keywords

References

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