Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Characteristics of Circular β-Ga2O3 MOSFETs with High Breakdown Voltage (>1,000 V)

높은 항복전압(>1,000 V)을 가지는 Circular β-Ga2O3 MOSFETs의 특성

  • Cho, Kyu Jun (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Mun, Jae-Kyong (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Chang, Woojin (RF/Power Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Jung, Hyun-Wook (RF/Power Components Research Group, Electronics and Telecommunications Research Institute)
  • 조규준 (한국전자통신연구원 RF/전력부품연구실) ;
  • 문재경 (한국전자통신연구원 RF/전력부품연구실) ;
  • 장우진 (한국전자통신연구원 RF/전력부품연구실) ;
  • 정현욱 (한국전자통신연구원 RF/전력부품연구실)
  • Received : 2019.10.31
  • Accepted : 2019.12.04
  • Published : 2020.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga2O3 are demonstrated. A Si-doped Ga2O3 epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga2O3 substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×109, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga2O3 for power device applications including electric vehicles, railways, and renewable energy.

Keywords

References

  1. K. Shimamura, E. G. Villora, K. Domen, K. Yui, K. Aoki, and N. Ichinose, Jpn. J. Appl. Phys., 44, L7 (2005). [DOI: https://doi.org/10.1143/jjap.44.l7]
  2. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett., 100, 013504 (2012). [DOI: https://doi.org/10.1063/1.3674287]
  3. M. Higashiwaki, A. Kuramata, H. Murakami, and Y. Kumagai, J. Phys. D: Appl. Phys., 50, 333002 (2017). [DOI: https://doi.org/10.1088/1361-6463/aa7aff]
  4. J. K. Mun, K. Cho, W. Chang, H. Lee, S. Bae, J. Kim, and H. Sung, J. Korean Inst. Electr. Electron. Mater. Eng., 32, 201 (2019). [DOI: https://doi.org/10.4313/JKEM.2019.32.3.201]
  5. J. K. Mun, K. J. Cho, J. W. Do, H. S. Lee, S. B. Bae, and W. J. Chang, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2018 (CDM THE BIG, Goseong-Gun, Korea, 2018) p. 35.
  6. J. K. Mun, K. J. Cho, W. J. Chang, and H. Jung, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2019 (CDM THE BIG, Heongsung-Gun, Korea, 2019) p. 31.
  7. B. J. Baliga, IEEE Electron Device Lett., 10, 455 (1989). [DOI: https://doi.org/10.1109/55.43098]
  8. M. Baldini, Z. Galazka, and G. Wagner, Mater. Sci. Semicond. Process., 78, 132 (2018). [DOI: https://doi.org/10.1016/j.mssp.2017.10.040]
  9. A. Y. Polyakov, N. B. Smirnov, I. V. Schemerov, A. V. Chernykh, E. B. Yakimov, A. I. Kochkova, A. N. Tereshchenko, and S. J. Pearton, ECS. J. Solid State Sci. Technol., 8, Q3091 (2019). [DOI: https://doi.org/10.1149/2.0171907jss]
  10. A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, S. J. Pearton, F. Ren, A. V. Chernykh, and A. I. Kochkova, Appl. Phys. Lett., 113, 142102 (2018). [DOI: https://doi.org/10.1063/1.5051986]
  11. H. Yu, M. Schaekers, T. Schram, N. Collaert, K. D. Meyer, N. Horiguchi, A. Thean, and K. Barla, IEEE Electron Device Lett., 35, 957 (2014). [DOI: https://doi.org/10.1109/led.2014.2340821]
  12. K. J. Cho, H. Jung, W. J. Chang, and J. K. Mun, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2019 (KIEEME, Heongsung-Gun, Korea, 2019) p. 37.
  13. S. Jakschik, U. Schroeder, T. Hecht, M. Gutsche, H. Seidl, and J. W. Bartha, Thin Solid Films, 425, 216 (2013). [DOI:https://doi.org/10.1016/s0040-6090(02)01262-2]
  14. J. E. Hogan, S. W. Kaun, E. Ahmadi, Y. Oshima, and J. S. Speck, Semicond. Sci. Technol., 31, 065006 (2016). [DOI:https://doi.org/10.1088/0268-1242/31/6/065006]
  15. L. Zhang, A. Verma, H. G. Xing, and D. Jena, Jpn. J. Appl. Phys., 56, 030304 (2017). [DOI: https://doi.org/10.7567/jjap.56.030304]
  16. J. Yang, S. Ahn, F. Ren, S. Pearton, R. Khanna, K. Bevlin, D. Geerpuram, and A. Kuramata, J. Vac. Sci. Technol., B, 35, 031205 (2017). [DOI: https://doi.org/10.1116/1.4982714]
  17. H. Jung, K. J. Cho, W. J. Chang, and J. K. Mun, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2019 (KIEEME, Heongsung-Gun, Korea, 2019) p. 61.