• Title/Summary/Keyword: Off-current

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Surge Characteristics Analysis of Three-phase Virtual Chopping at Vacuum Circuit Breaker (진공차단기 3상 동시 차단시의 서지 특성 분석)

  • Kim, Jong-Gyeum
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.9
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    • pp.1159-1164
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    • 2018
  • Vacuum circuit breakers(VCB) are widely used for current interruption of high-voltage inductive loads such as induction motors. This VCB can be chopped off before the current zero due to its high arc-extinguishing capability. One of the outstanding features of VCB is that it can cut off high frequency re-ignition current more than other circuit breakers. If the transient recovery voltage generated in the arc extinguishing is higher than the dielectric strength of the circuit breaker, a re-ignition phenomenon occurs. The surge voltage of the re-ignition is very high in magnitude and the steepness of the waveform is so severe that it can act as a high electrical stress on the winding. If the high frequency current of one phase affects the other two phases when the re-ignition occurs, it may cause a high surge voltage due to the virtual current chopping. If the magnitude of the voltage allowed in the motor winding is high or the waveform level is too severe, it may lead to insulation breakdown. Therefore, it is necessary to reduce the voltage to within a certain range. In this study, we briefly explain the various phenomena at the time of interruption, analyzed the magnitude of the dielectric strength and the transient recovery voltage at the simultaneous three-phase interruption that can give the greatest influence to the inductive load, proposed a method to reduce the impact.

Comparative Analysis of Current Controls for Boost PFC Converter under Light Load

  • Juil Kim;Yeong-Jun Choi
    • Journal of the Korea Society of Computer and Information
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    • v.29 no.6
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    • pp.143-151
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    • 2024
  • In this paper, the inductor current distortion in a boost PFC (Power Factor Correction) converter under light load is mathematically analyzed, and its reasons are defined. In the average current mode control under light load, the inductor current is discontinuous, resulting in an inaccurate inductor current average value being reflected in the current control. In predictive current mode control, the current ripple is relatively large compared to the inductor current, leading to severe current distortion. In addition, the switch is turned off near the peak of the inductor current when model predictive current control is applied. Inductor current distortion must be addressed because it leads to an increase in total harmonic distortion and a decrease in power factor. In this paper, the design procedure to mitigate the light load current distortion in boost PFC converter is selected based on the mathematical analysis. Finally, a comparative analysis of control methods under light load is performed using hardware-in-the-loop simulation.

Performance enhancement of Organic Thin Film Transistor by Ar Ion Beam treatment (Ar Ion Beam 처리를 통한 Organic Thin Film Transistor의 성능향상)

  • Jung, Suk-Mo;Park, Jae-Young;Yi, Moon-Suk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.11
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    • pp.15-19
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    • 2007
  • This paper reports the effects of Ar ion beam surface treatment on a $SiO_2$ dielectric layer in organic thin film transistors. We compared the electrical properties of pentacene-based OTFTs, treated by $O_2$ plasma or Ar ion beam treatments and characterized the states of the surface of the dielectric by using atomic force microscopy and X-ray photoelectron spectroscopy. For the sample which received $O_2$ plasma treatment, the mobility increased significantly but the on/off current ratio was found very low. The Ar ion beam-treated sample showed a very high on/off current ratio as well as a moderately improved mobility. XPS data taken from the dielectric surfaces after each of treatments exhibit that the ratio of between Si-O bonds and O-Si-O bonds was much higher in the $O_2$ plasma treated surface than in the Ar ion beam treated surface. We believe that our surface treatment using an inert gas, Ar, carried out an effective surface cleaning while keeping surface damage very low, and also the improved device performances was achieved as a consequence of improved surface condition.

Gifted Students' Perceptions of On-line and Off-line Gifted Education in Mathematics (수학 영재교육에 대한 일반 영재학생과 사이버 영재학생의 인식 분석)

  • Hwang, Hee-Sook;Kim, Mal-Sook
    • Journal of Fisheries and Marine Sciences Education
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    • v.22 no.3
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    • pp.316-329
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    • 2010
  • The purpose of this study was to examine how middle school students perceived the operation of on-line and off-line math-gifted education. The research questions were as follows: 1. How do students recognize the current situation concerning the operation of on-line and off-line gifted education? 2. How do students recognize the effect and satisfaction level of on-line and off-line gifted education? 3. How do students recognize the improvement of on-line and off-line gifted education? The subjects in this study were 591 students who included 208 in on-line classes and 383 in off-line classes. The results were as follows: First, the students who were enrolled in the on-line and off-line classes regarded gifted people as ones who had a superb ability in a particular field and as ones who think creatively. Second, all the students in on-line and off-line classes found gifted education to be of use to developing their potentials, and they had the biggest preference for experiential field study as the most effective teaching method. Third, concerning their needs for the management of gifted classes, they asked for immediate Q&A services over the Internet.

A Driving and Pick-Off Method of Vibratory Gyroscopes Using Electromagnetic Force (전자기력을 이용한 진동형 자이로스코프의 가진 및 검출 기법 연구)

  • 이정영;홍성경
    • Journal of Institute of Control, Robotics and Systems
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    • v.9 no.1
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    • pp.30-36
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    • 2003
  • Driving and pick-off using electromagnetic force for a cylindrical vibratory gyroscope is considered. A gyroscope consisting of thin cylindrical vibrating element and electromagnetic drive and pick-off element is designed, fabricated and tested. The results of the proposed pick-off method were compared with the results of the highly precise laser interferometer and eddy current sensor as it was used as the reference standard. Through the experiment, it is verified that the proposed electromagnetic driving and pick-off method can be an effective alternative to conventional electrostatic or piezo-electric methods.

A Study on Fuzzy Logic Torque Ripple Reduction by Turn-off Angle Compensation of LSRM (LSRM의 Turn-off보상에 의한 퍼지로직 토크리플저감에 관한 연구)

  • Sung, H.K.;Jho, J.M.;Lee, J.M.;Yu, M.W.;Kim, D.S.
    • Proceedings of the KIEE Conference
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    • 2005.07b
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    • pp.1616-1618
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    • 2005
  • In this paper, A fuzzy logic based turn-off angle compensator for torque ripple reduction in a linear switched reluctance motor is proposed. The turn-off angle, as a complex function of motor speed and current, is automatically changed for a wide speed range to reduce torque ripple. Simulation results are presented that show ripple reduction when the him-off angle compensator is used.

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An Optical Cavity Design for an Infrared Gas Detector Using an Off-axis Parabolic Mirror

  • Jeong, You-Jin;Kang, Dong-Hwa;Seo, Jae-Yeong;Jo, Ye-Ji;Seo, Jin-Hee;Choi, Hwan-Young;Jung, Mee-Suk
    • Current Optics and Photonics
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    • v.3 no.5
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    • pp.374-381
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    • 2019
  • This study examined a method for designing the optical cavity of a non-dispersive infrared gas detector. The infrared gas detector requires an optical cavity design to lengthen the ray path. However, the optical cavity with multiple reflecting surfaces has off-axis aberration due to the characteristics of the reflecting optical system. The rays were parallelized by using the off-axis parabolic mirror to easily increase the ray path and eliminate off-axis aberration so that the rays are admitted to the effective area of the infrared detector uniformly. A prototype of an infrared gas detector was produced with the designed optical cavity to confirm the performance.

고주파 공진형 스위칭 전원방식과 응용기술동향(공진 DC 링크 인버터)

  • 고요
    • The Magazine of the IEIE
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    • v.20 no.9
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    • pp.82-89
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    • 1993
  • 새로운 개념의 인버터로서 종래의 인버터의 직류부에 공진회로를 설치하여 직류와 교류를 공진 DC 링크로 접속하는 방식이다. 공진동작으로 링크부의 전압이 명이되는 것을 이용하여 인버터의 PSD를 ZVSAT킨다. (PSD = Power Switching Device)전압공진형은 ZVS가 가능하나 어느 정도의 전류를 OFF할 필요가 있기 때문에 비교적 TURN OFF의 속도가 빠른 MOSFET, SIT, IGBT등의 PSD를 이용하여 수십 kHz의 스위칭 을 한다. 여기에 대하여 전류공진형은 ZCS(Zero Current State)가 가능하게 되고 OFF하는 전류도 작게되기 때문에 TURN OFF가 늦은 BJT와 GTO. IGBT 싸이리스터 등의 TURN OFF 시간이 꾀 짧은 것들을 이용하여 수십 kHz의 스위칭이 가능하게 된다. 이들 PSD는 대용량화에 적합하여 대용량 전력변환기에의 적용이 시도되고 있다. 여기에서는 이들 인버터에 관하여 기본적인 동작원리와 제어방식을 중심으로 설명한다. 또한 공진형 방식의 결점인 전압과 전류의 피크치를 저감하는 전압 Clamp식에 관하여도 기술한다.

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High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors (고전압 β-산화갈륨(β-Ga2O3) 전력 MOSFETs)

  • Mun, Jae-Kyoung;Cho, Kyujun;Chang, Woojin;Lee, Hyungseok;Bae, Sungbum;Kim, Jeongjin;Sung, Hokun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.3
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    • pp.201-206
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    • 2019
  • This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

Fabrication and Characterization of Si-tip Field Emitter Array (실리콘 팁 전계 방출 소자의 제조 및 동작 특성 평가)

  • 주병권;이상조;박재석;이윤희;전동렬;오명환
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.1
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    • pp.65-73
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    • 1999
  • Si-tip FEAs were fabricated by a lift-off based process and their operating properties were evaluated. The dependence of emission current on applied gate and anode voltages, maximum emission current, hysteresis phenomena, MOSFET-type curves, current fluctuation, light emission from the emitted electrons, and failure mechanism of the device were widely discussed based on the experimental results.

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