• Polymer(Korea)
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• v.35 no.2
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• pp.136-140
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• 2011

The plasma resistances of nitrile curable perfluoro elastomer (NT PFE) and peroxide curable PFE (PO PFE) after exposing to $NF_3$ and $O_2$ remote plasmas were investigated by analyzing weight loss and morphology of O-ring made of PFE. The compounds were designed following the typical formulations of O-ring/seal which were applied in semiconductor and LCD production site. They were blended by an open roll mill, and then, O-ring was finally made by hot press molding and oven curing. The weight loss was calculated and morphology was observed for each atmosphere and temperature by a digital weighing machine and SEM. As results, it was confirmed the weight loss and related morphology were meaningfully different according to the cure type of PFE, filler system, and the species of remote plasma.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.403-409
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• 1998

In this study, the effects of multi-dipole type of magnets on the characteristics of the inductively coupled plasmas and $SiO_2$ etch properties were investigated. As the magnets, 4 pairs of permanent magnets were used and, to etch $SiO_2, C_2F_6, CHF_3, C_4F_8, H_2$, and their combinations were used. The characteristics of the magnetized inductively coupled plasmas were investigated using a Langmuir probe and an optical emission spectrometer, and $SiO_2$ etch rates and the etch selectivity over photoresist were measured using a stylus profilometer. The use of multi-dipole magnets increased the uniformity of the ion density over the substrate location even though no significant increase of ion density was observed with the magnets. The use of the magnets also increased the electron temperature and radical densities while reducing the plasma potential. When $SiO_2$ was etched using the fluorocarbon gases, the significant increase of $SiO_2$ etch rates and also the increase of etch uniformity over the substrate were obtained using the magnets. In case of gas combinations with hydrogen, $C_4F_8/H_2$ showed the highest etch rates and etch selectivities over photoresist among the gas combinations with hydrogen used in the experiment. By optimizing process parameters at 1000 Watts of inductive power with the magnets, the highest $SiO_2$ etch rate of 8000 $\AA$/min could be obtained for 50% $C_4F_8/50% H_2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.71-72
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• 2007

In this study, we investigated the fabrication of MLR (multi-layer resist) with a very thin diamond-like carbon (DLC) layer. ArF PR/$SiO_2$/DLC MLR structure was investigated and etching characteristics of the DLC layer was patterned using $SiO_2$ hard-mask by varying the process parameters such as different high-frequency/low-frequency combination ($f_{LF}/f_{HF}$), HF/LF power ratio ($P_{HF}/P_{LF}$), $O_2$ flow and $N_2$ flow rate in $O_2/N_2$/Ar plasmas. The results indicated an increased etch rate of DLC for the higher $f_{LF}/f_{HF}$ combination and for the increased low-frequency power ($P_{LF}$). And the etch rate of DLC was decreased with increasing the $N_2$ flow rate in $O_2/N_2$/Ar plasmas. In order to confirm the application of DLC MLR for the etching process of silicon oxide, the stack of ArF PR/BARC/$SiO_2$/DLC/TEOS/Si was investigated.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.258-265
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• 2011

A zero-dimensional global model simulator for atmospheric pressure oxygen plasmas has been developed. The simulation model considers the configurations similar to that of plasma needle device. The simulation results show that those species of O, $O_3$, $O_2*$ and ${O_2}^+$ have the highest density in sequence. Electrons dissipate most of their energy through the collisions with oxygen molecules. If the input power increases, the density of most species also increases as much as three-boy collision for the creation of ozone is weakened and hence the density of ozone decreases. The body to volume ratio also affects the plasma density.

• ETRI Journal
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• v.30 no.3
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• pp.383-393
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• 2008

The etching mechanism of $ZrO_2$ thin films and etch selectivity over some materials in both $BCl_3$/Ar and $BCl_3/CHF_3$/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In $BCl_3$/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, $BCl_2$, and ${BCl_2}^+$. In this work, it is shown that the non-monotonic behavior of the $ZrO_2$ etch rate as a function of the $BCl_3$/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% $CHF_3$ to the $BCl_3$-rich $BCl_3$Ar plasma does not influence the $ZrO_2$ etch rate, but it non-monotonically changes the etch rates of both Si and $SiO_2$. The last effect can probably be associated with the corresponding behavior of the F atom density.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.234-235
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• 2006

In this study, the plasma sprayed $Al_2O_3$ and $Y_2O_3$ coatings have been investigated for applications of microelectronic components. The plasma sprayed coatings had a well-defined splatted lamellae microstructure, intersplat pores and a higher amount of microcracks within the splats. The plasma sprayed $Y_2O_3$ coating had a relatively lower hardness of 300-400Hv, compared to 650-800Hv for $Al_2O_3$ coating, and would be readily damaged by mechanical attacks such as erosion, wear and friction. For a reactive ion etching against F-containing plasmas, however, the $Y_2O_3$ coating had a much higher resistance than the $Al_2O_3$ coating because of the reduced erosion rate of by-products.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.35.2-35.2
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• 2007

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.255-258
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• 2002

In this study, $CeO_2$thin films were etched with an addition of $Cl_2$gas to $Ar/CF_4$gas mixing in an inductively coupled plasma(ICP) etcher. The surface reactions of the etched $_CeO2$thin films were investigated by X-ray photoelectron spectroscopy(XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$or $CeO_3$compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_{x}$ compounds.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.16-22
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• 2008

We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.333-333
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• 2015

본 연구에서는 디스플레이 패널 식각에 있어서 전극인 구리 박막 표면에 $SF_6/O_2$ 플라즈마 사용 시 발생되는 Corrosion 현상을 분석하기 위해 $SF_6/O_2$ 가스의 조성비를 변화하며 실험을 진행하였다. 유도결합 $SF_6/O_2$ 플라즈마를 이중 랭뮤어 탐침과 광 분광법을 이용한 플라즈마 진단을 통해 $SF_6/O_2$의 조성비의 변화에 따른 플라즈마 상태를 분석하고, $SF_6/O_2$ 플라즈마 조성비를 변화시켜 구리 박막의 표면을 처리한 후 발생되는 Corrosion과 Corrosion이 구리에 미치는 영향을 조사하기 위해 XPS, SEM, 4 point probe 등을 이용하였다.