Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)

The Korean Institute of Surface Engineering (한국표면공학회)
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Multi-layer resist (MLR) structure with a very thin DLC layer

  • Kim, H.T. (School of Advanced Materials Science and Engineering & Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Kwon, B.S. (School of Advanced Materials Science and Engineering & Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Park, S.M. (School of Advanced Materials Science and Engineering & Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Lee, N.E. (School of Advanced Materials Science and Engineering & Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Cho, H.J. (School of Information and Communication Engineering & Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Hong, B.Y. (School of Information and Communication Engineering & Center for Advanced Plasma Surface Technology, Sungkyunkwan University)
  • Published : 2007.04.05
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Abstract

In this study, we investigated the fabrication of MLR (multi-layer resist) with a very thin diamond-like carbon (DLC) layer. ArF PR/$SiO_2$/DLC MLR structure was investigated and etching characteristics of the DLC layer was patterned using $SiO_2$ hard-mask by varying the process parameters such as different high-frequency/low-frequency combination ($f_{LF}/f_{HF}$), HF/LF power ratio ($P_{HF}/P_{LF}$), $O_2$ flow and $N_2$ flow rate in $O_2/N_2$/Ar plasmas. The results indicated an increased etch rate of DLC for the higher $f_{LF}/f_{HF}$ combination and for the increased low-frequency power ($P_{LF}$). And the etch rate of DLC was decreased with increasing the $N_2$ flow rate in $O_2/N_2$/Ar plasmas. In order to confirm the application of DLC MLR for the etching process of silicon oxide, the stack of ArF PR/BARC/$SiO_2$/DLC/TEOS/Si was investigated.

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