• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.5
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• pp.197-202
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• 2021

Synthesis of Z-type hexaferrite Ba₃Co₂Fe₂₄O₄₁ (Ba₃Z) and Ba_1.5La_1.5Co₂Fe₂₄O₄₁ (Ba_1.5La_1.5Z) powders were tried using molten salt synthesis after primary calcination. Ba₃Z calcined at 1000℃ was formed with both M-type and Y-type hexaferrite, and then Z-type was obtained when sintered with molten salt at 1150℃ and 1200℃. In the case of Ba_1.5La_1.5Z calcined at 1000℃, however, M-type hexaferrite, CoFe₂O₄ (Spinel phase), and LaFeO₃ were synthesized. As a result, Z-type hexaferrite was not synthesized after sintering with molten salt. In addition, the aspect ratio of the particles decreased as the sintering temperature increased with molten salt synthesis. To obtain a single-phase Ba_1.5La_1.5Z with a high aspect ratio, it is expected the raw materials have to calcine below the temperature of a spinel phase formation before sintering with molten salt.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• Journal of the Korean Chemical Society
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• v.26 no.5
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• pp.265-273
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• 1982

The effect of ${\pi}$ bonds on the calculated dipole moments for square planar and tetrahedral [M(II)$O_2S_2$]] type complexes has been investigated by two different approaches. One is the approximate molecular orbital method based on the assumption that the mixing coefficient CM of the valence basis sets for the central metal ion and the appropriate ligand orbitals is equal for all ${\sigma}$ and ${\pi}$ bonding molecular orbitals. The other is the more refined calculation based on the semiempirical LCAO-MO method. If ${\sigma}$ bonds only are assumed to be formed, the calculated dipole moments for square planar and tetrahedral complexes are lower than those of the experimental values. If the contribution of ${\pi}$ bonds to the calculated dipole moments are fully considered, the calculated dipole moments for both square planar and tetrahedral [M(II)$O_2S_2$]] type complexes are higher than the experimental values. However if ${\pi}$ bonds are assumed to be delocalzed, the calculated dipole moments for tetrahedral [M(II$O_2S_2$]] type complexes fall in the range of the experimental values, but those for square planar complexes deviate from the experimental values. These results suggest that [M(II)$O_2S_2$]] type complexes may have the tetrahedral structure in inert solvent solution. This structure is in agreement with the experimental one. The calculated dipole moments for tetrahedral [M(II)$O_2S_2$]] type complexes indicate that the contribution of ${\pi}$ bonds to the calculated dipole moments may not be neglected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.177-177
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• 2007

ZnO는 3.36eV의 넓은 밴드캡을 가지는 II-IV족 반도체로써 태양전지, LED와 같은 광학적 소자로 이용이 기대가 되는 물질이다. 더욱이, 상온에서의 60meV에 해당하는 큰 엑시톤 에너지와 밴드캡 에지니어링이 가능하다는 장점 때문에 광학적 소자로 널리 이용되고 있는 GaN을 대체할 수 있는 물질로 주목을 받고 있다. 하지만, p-type ZnO는 형성이 어렵고 낮은 이동도와 케리어 농도의 특성을 보이고, 대기 중에 장시간 노출할 경우 n-type ZnO의 특성으로 돌아가는 불안정성을 보이고 있다. 최근에 몇몇의 연구자들에 의해 V족의 원소인 P(phosphorous), N(nitrogen), As(arsenic))를 도핑하여 p-type ZnO의 형성에 대한 논문이 발표되고 있다. 또한, V족 원소 중에 P는 p-type ZnO 형성에 효과적인 도핑 물질로 보고되 고 있다. 본 연구는 마그네트론 스퍼터링을 이용하여 다양한 온도에서 성장된 P도핑 ZnO 박막의 특성에 대해 연구하였다. P도핑된 ZnO 박막은 사파이어 기판에 buffer층을 사용한 Insulator 특성의 ZnO박막위에 400, 500, 600, $700^{\circ}C$에서 성장되 었다. 박막의 특성 분석에는 325nm의 파장을 가지는 He-Cd의 레이져 광원을 사용하여 10K의 저온 PL과 0.5T의 자기장을 사용한 van der Pauw configuration에 의한 Hall effect측정, 그리고 결정성 분석에는 XRD와 TEM을 이용하였다. 상온 Hall-effect 측정 결과, $400{\sim}600^{\circ}C$ 에서 성장된 박막은 n-type의 특성을 보였고, $700^{\circ}C$에서 성장된 Phosphorous 도핑 ZnO박막은 $1.19{\times}10^{17}$의 캐리어 농도를 가지는 p-type의 특성을 보였다. 그리고 XRD분석과 TEM분석을 통하여 박막의 성장온도가 증가 할수록 P도핑된 ZnO박막의 결정성이 향상되는 것을 알 수 있었다. 또한 10K의 저온 PL분석을 통해 p도핑에 의한 액셉터에 관련된 피크들을 관찰할 수 있었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.141-142
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• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $1.9{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is $700^{\circ}C$, 3hr. Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.243-249
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• 1993

Coated type Al2O3-SiC composite powders were synthesized by surface modification method. Transformation temperature to $\alpha$-Al2O3 of Al2O3 monolith was 115$0^{\circ}C$ whereas increased to 1200, 1250, 130$0^{\circ}C$ with increment of SiC content to 5, 15, 25wt%. Transformation temperature to $\alpha$-Al2O3 was lowered by $\alpha$-Al2O3 seeding. FTIR data analysis and electron micrographs showed that Al2O3 particles were effectively coated on SiC particles.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.90-95
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• 2000

The ferrites, CuFe2O4 and SrFe12O129, were applied to decompose H2O for H2 generation. The ferrites prepared by the coprecipitation were reduced by CH4 gas to make the oxygen deficient ferrite. H2O was decomposed to form H2 by the oxygen deficient iron oxide, and the decomposition reactions were accelerated by the addition of divalent metals such as Cu and Sr in the ferrites. The spinel type CuFe2O4 containing a relatively large amount of divalent metals was more effective to H2 generation than magnetoplumbite type SrFe12O19 in H2O decomposition.

• Journal of Digital Contents Society
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• v.11 no.2
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• pp.277-282
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• 2010

In this paper, the wireless transmission module is developed to transmit oxygen saturation(SpO2) signal, acquired from bio-signal measuring module, to PC. This wireless transmission module is designed with closed type protocol instead of open type protocol such as a zigbee or a bluetooth, considering of the security of personal medical informations. The display software is also developed to display transmitted SpO2 signals by various type data and graph without information loss for a emergency transfer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.444-448
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• 2010

Based on first-principles calculations, we study the magnetic properties of Co, Ni, Fe, V, and Mn impurities in ZnO. The stabilities of the ferromagnetic state and the magnetic moment of each impurity largely depend on the amount of doped electron or hole. For lightly doped n-type ZnO, it is found that the doping of Ni ions is the most effective for inducing ferromagnetism, while Fe ions show the most stable ferromagnetic couplings for heavily doped n-type samples. The characteristics of the magnetic interactions of Co ions are similar with those of Fe ions, but Co ions require much larger amount of doped electron than Fe ions to show the ferromagnetic couplings. The ferromagnetic coupling between Mn and V ions is unstable in n-type conditions.