• Title/Summary/Keyword: O-plasma treatment

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Quantitative Analysis of Heavy Metals in Packaging Papers

  • Jo, Byoung-Muk;Jeong, Myung-Joon
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.39 no.5
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    • pp.45-51
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    • 2007
  • This study was carried out to investigate various heavy metal contents in packaging papers by pre-treatments for ICP-ES (Inductively Coupled Plasma Emission Spectrometry) analysis. Pre-treatment methods of heavy metals in this study include extraction, migration and decomposition methods (dry ashing, $HNO_3-HClO_4-HF,\;HNO_3,\;and\;H_2SO_4-HNO_3$). Test results were compared with conventional extraction (water) and migration (3% acetic acid) methods. The five representative heavy metals (Cd, As, Pb, Cr and Hg) were analyzed. For Cd, Hg, and As, the results were below detection limit of the instrumental technique. It was considered that the migration test was a better method compared to extraction test, but all the decomposition methods showed much higher detection values than the extraction or migration test. In case of recycled corrugated containers, 3% acetic acid solution extracted about 25% of chromium and 30% of lead compared to the content by decomposition methods. Among all decomposition methods, the nitric acid - perchloric acid - hydrofluoric acid treatment brought a slightly higher detection value than others, but there was no significant difference among them except sulfuric acid - nitric acid method.

A Study on the corrosion property by post treatment in the metal dry etch (Metal 건식각 후처리에 따른 부식 특성에 관한 연구)

  • Mun, Seong-Yeol;Kang, Seong-Jun;Joung, Yang-Hee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.10a
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    • pp.747-750
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    • 2007
  • This study proposes that chlorine residue after metal etch as the source of metal corrosion, and charges should be removed by optimizing etch, PR strip and cleaning condition. Charges distributed along the metal line acts as a source of tungsten (W) plug corrosion when associated with following cleaning solution. In cleaning process after metal etch and PR strip, chemical selection is significantly important in terms of metal corrosion. Optimal corrosion preventive PH, no metal attack (choice of optimal inhibitants), high by product removal efficiency and optimal de ionized water treatment condition is critical to the metal corrosion prevention.

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Decomposition of odor using atmospheric-pressure plasma (플라즈마를 이용한 악취물질 분해 특성)

  • Kang, Seok-Won;Lee, Jae-Sik;Lee, Kang-San;Lim, Hee-Ah;Kim, Ji-Seong;Lee, Jeong-Dae;Park, Wol-Su;Park, Young-Koo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.7
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    • pp.708-718
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    • 2020
  • Offensive odor is recognized as a social environmental problem due to its olfactory effects. Ammonia(NH3), hydrogen sulfide(H2S) and benzene(C6H6) are produced from various petrochemical plants, public sewage treatment plants, public livestock wastes, and food waste disposal facilities in large quantities. Therefore efficient decomposition of offensive odor is needed. In this study, the removal efficiency of atmospheric-pressure plasma operating at an ambient condition was investigated by evaluating the concentrations at upflow and downflow between the plasma reactor. The decomposition of offensive odor using plasma is based on the mechanism of photochemical oxidation of offensive odor using free radical and ozone(O3) generated when discharging plasma, which enables the decomposition of offensive odor at ordinary temperature and has the advantage of no secondary pollutants. As a result, all three odor substances were completely decontaminated within 1 minute as soon as discharging the plasma up to 500 W. This result confirms that high concentration odors or mixed odor materials can be reduced using atmospheric-pressure plasma.

Interface Treatment Effect of High Performance Flexible Organic Thin Film Transistor (OTFT) Using PVP Gate Dielectric in Low Temperature (저온 공정 PVP게이트 절연체를 이용한 고성능 플렉서블 유기박막 트랜지스터의 계면처리 효과)

  • Yun, Ho-Jin;Baek, Kyu-Ha;Shin, Hong-Sik;Lee, Ga-Won;Lee, Hi-Deok;Do, Lee-Mi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.1
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    • pp.12-16
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    • 2011
  • In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.

Repair of Plasma Damaged Low-k Film in Supercritical Carbon Dioxide (초임계이산화탄소를 이용한 플라즈마 손상된 다공성 저유전 막질의 복원)

  • Jung, Jae-Mok;Lim, Kwon-Taek
    • Clean Technology
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    • v.16 no.3
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    • pp.191-197
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    • 2010
  • Repair reaction of plasma damaged porous methyl doped SiOCH films was carried out with silylation agents dissolved in supercritical carbon dioxide ($scCO_2$) at various reaction time, pressure, and temperature. While a decrease in the characteristic bands at $3150{\sim}3560cm^{-1}$ was detectable, the difference of methyl peaks was not identified apparently in the FT-IR spectra. The surface hydrophobicity was rapidly recovered by the silylation. In order to induce effective repair in bulk phase, the wafer was heat treated before reaction under vacuum or ambient condition. The contact angle was slightly increased after the treatment and completely recovered after the subsequent silylation. Methyl groups were decreased after the plasma damage, but their recovery was not identified apparently from the FT-IR, spectroscopic ellipsometry, and secondary ion mass spectroscopy analyses. Furthermore, Ti evaporator was performed in a vacuum chamber to evaluate the pore sealing effect. The GDS analysis revealed that the open pores in the plasma damaged films were efficiently sealed with the silylation in $scCO_2$.

Quantitative Changes in Phenolic Compounds of Safflower (Carthamus tinctorius L.) Seeds during Growth and Processing

  • Kim, Eun-Ok;Lee, Jun-Young;Choi, Sang-Won
    • Preventive Nutrition and Food Science
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    • v.11 no.4
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    • pp.311-317
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    • 2006
  • Phenolic compounds in safflower seeds were recently found to stimulate bone formation and increase plasma HDL cholesterol levels in estrogen deficient rats, and to inhibit melanin synthesis. Nine phenolic compounds: $N-feruloylserotonin-5-O-{\beta}-D-glucoside,\;8'-hydroxyarctigenin-4'-O-{\beta}-D-glucoside,\;luteolin-7-O-{\beta}-D-glucoside$, N-(p-coumaroyl)serotonin, N-feruloylserotonin, 8'-hydroxy arctigenin (HAG), luteolin (LT), $acacetin-7-O-{\beta}-D-glucuronide$ (ATG) and acacetin (AT), were quantified by HPLC in safflower (Carthamus tinctorius L.) seeds during growth and processing. During growth, levels of the nine phenolic compounds in the seeds increased progressively with increasing growth stages, reached a maximum on July 30 (42nd day after flowering), and then remained relatively constant. During the roasting process, levels of phenolic compounds, except HAG, LT and AT, generally decreased with increased roasting temperature and time, whereas those of HAG, LT and AT increased progressively with increased roasting temperature and time. During the steaming process, levels of other phenolic compounds except HAG and AT generally tended to increase with increased steaming time, whereas those of HAG and AT were scarcely changed. During the microwave treatment, quantitative changes of phenolic compounds were similar to the roasting process, although there were some differences in levels of phenolic compounds between two heat treatments. These results suggest that the steamed safflower seeds after harvesting on late July may be useful as potential dietary supplement source of phenolic compounds for prevention of several pathological disorders, such as atherosclerosis and osteoporosis and aging.

Long Noncoding RNA MHRT Protects Cardiomyocytes against H2O2-Induced Apoptosis

  • Zhang, Jianying;Gao, Caihua;Meng, Meijuan;Tang, Hongxia
    • Biomolecules & Therapeutics
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    • v.24 no.1
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    • pp.19-24
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    • 2016
  • Acute myocardial infarction (AMI) remains a leading cause of morbidity and mortality worldwide. The exploration of new biomarkers with high sensitivity and specificity for early diagnosis of AMI therefore becomes one of the primary task. In the current study, we aim to detect whether there is any heart specific long noncoding RNA (lncRNA) releasing into the circulation during AMI, and explore its function in the neonatal rat cardiac myocytes injury induced by $H_2O_2$. Our results revealed that the cardiac-specific lncRNA MHRT (Myosin Heavy Chain Associated RNA Transcripts) was significantly elevated in the blood from AMI patients compared with the healthy control ($^*p<0.05$). Using an in vitro neonatal rat cardiac myocytes injury model, we demonstrated that lncRNA MHRT was upregulated in the cardiac myocytes after treatment with hydrogen peroxide ($H_2O_2$) via real-time RT-PCR (qRT-PCR). Furthermore, we knockdowned the MHRT gene by siRNA to confirm its roles in the $H_2O_2$-induced cardiac cell apoptosis, and found that knockdown of MHRT led to significant more apoptotic cells than the non-target control ($^{**}p<0.01$), indicating that the lncRNA MHRT is a protective factor for cardiomyocyte and the plasma concentration of MHRT may serve as a biomarker for myocardial infarction diagnosis in humans AMI.

Neuroprotective Effect of Epalrestat on Hydrogen Peroxide-Induced Neurodegeneration in SH-SY5Y Cellular Model

  • Lingappa, Sivakumar;Shivakumar, Muthugounder Subramanian;Manivasagam, Thamilarasan;Somasundaram, Somasundaram Thirugnanasambandan;Seedevi, Palaniappan
    • Journal of Microbiology and Biotechnology
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    • v.31 no.6
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    • pp.867-874
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    • 2021
  • Epalrestat (EPS) is a brain penetrant aldose reductase inhibitor, an approved drug currently used for the treatment of diabetic neuropathy. At near-plasma concentration, EPS induces glutathione biosynthesis, which in turn reduces oxidative stress in the neuronal cells. In this study, we found that EPS reduces neurodegeneration by inhibiting reactive oxygen species (ROS)-induced oxidative injury, mitochondrial membrane damage, apoptosis and tauopathy. EPS treatment up to 50 µM did not show any toxic effect on SH-SY5Y cell line (neuroblastoma cells). However, we observed toxic effect at a concentration of 100 µM and above. At 50 µM concentration, EPS showed better antioxidant activity against H2O2 (100 µM)-induced cytotoxicity, ROS formation and mitochondrial membrane damage in retinoic acid-differentiated SH-SY5Y cell line. Furthermore, our study revealed that 50 µM of EPS concentration reduced the glycogen synthase kinase-3 β (GSK3-β) expression and total tau protein level in H2O2 (100 µM)-treated cells. Findings from this study confirms the therapeutic efficacy of EPS on regulating Alzheimer's disease (AD) by regulating GSK3-β and total tau proteins phosphorylation, which helped to restore the cellular viability. This process could also reduce toxic fibrillary tangle formation and disease progression of AD. Therefore, it is our view that an optimal concentration of EPS therapy could decrease AD pathology by reducing tau phosphorylation through regulating the expression level of GSK3-β.

Effect of Calcination Temperature on Ionic Conductivity of All-solid State Battery Electrolytes (하소 온도가 전고체 전지 전해질의 이온전도도에 미치는 영향)

  • Yu Taek Hong;Ji Min Im;Ki Sang Baek;Chan Gyu Kim;Seung Wook Baek;Jung Hyun Kim
    • New & Renewable Energy
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    • v.20 no.2
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    • pp.71-81
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    • 2024
  • In this study, the electrochemical properties of garnet-structured all-solid-state battery electrolytes (Li6.4La3Zr1.4Ta0.6O12, hereafter LLZTO) were assessed by altering the calcination temperature, while maintaining a consistent sintering duration. Among the various heat treatment conditions employed for sample fabrication, the '700_1100' condition, denoting a calcination temperature of 700℃ and a sintering temperature of 1100℃, resulted in the most exceptional ionic conductivity of 4.89 × 10-4 S/cm and a relative density of 88.72% for the LLZTO material. This is attributed to the low calcination temperature of 700℃, leading to reduced grain size and enhanced cohesiveness, thus resulting in a higher sintered density. In addition, a microstructure similar to the typical sintering characteristics observed in Spark Plasma Sintering (SPS) methods was identified in the SEM analysis results under the '700_1100' condition. Consequently, the '700_1100' heat treatment condition was deemed to optimal choice for enhancing ionic conductivity.

T$a_2O_5$Dielectric Thin Films by Thermal Oxidation and PECVD (열산화법 및 PECVD 법에 의한 T$a_2O_5$ 유전 박막)

  • Mun, Hwan-Seong;Lee, Jae-Seok;Lee, Jae-Seok;Lee, Jae-Seok;Yang, Seung-Gi;Lee, Jae-hak;Park, Hyung-ho;Park, Jong-wan
    • Korean Journal of Materials Research
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    • v.2 no.5
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    • pp.353-359
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    • 1992
  • Thermal oxidation and plasma enhanced chemical vapor deposition of tantalum oxide thin films on p-type (100) Si substrates were studied to examine the dielectric nature of T$a_2O_5$ as a Al/T$a_2O_5$/p-Si capacitor. Microstructure and dielectric properties of the capacitors were investigated by XRD, AES, high frequency C-V analyzer, I-V meter and TEM. XRD analysis showed that the structure of T$a_2O_5$ films were amorphous, but the films were crystallized to hexagonal $\delta$-T$a_2O_5$ by 65$0^{\circ}C$ thermal oxidation treatment. It was found that the stoichiometry of the films was more or less close to 2 : 5. Leakage current density and relative dielectric constant of thermal oxidation T$a_2O_5$ film at 60$0^{\circ}C$ was 5.0${ imes}10^{-6}$/A/c$m^2 and 31.5, respectively. In the case of PECVD T$a_2O_5$film deposited at 0.47W/c$m^2 they were 2.5${ imes}10^{-5}$/A/$ extrm{cm}^2$ and 24.0, respectively. The morphology of the films and interfaces were investigated by TEM.

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