• Title/Summary/Keyword: O-plasma treatment

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Effect of the Raw Material and Coating Process Conditions on the Densification of 8 wt% Y2O3-ZrO2 Thermal Barrier Coating by Atmospheric Plasma Spray

  • Oh, Yoon-Suk;Kim, Seong-Won;Lee, Sung-Min;Kim, Hyung-Tae;Kim, Min-Sik;Moon, Heung-Soo
    • Journal of the Korean Ceramic Society
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    • v.53 no.6
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    • pp.628-634
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    • 2016
  • The 8 wt% yttria($Y_2O_3$) stabilized zirconia ($ZrO_2$), 8YSZ, a typical thermal barrier coating (TBC) for turbine systems, was fabricated under different starting powder conditions and coating parameters by atmospheric plasma spray (APS) coating process. Four different starting powders were prepared by conventional spray dry method with different additive and process parameter conditions. As a result, large- and small-size spherical-type particles and Donut-type particles were obtained. Dense structure of 8YSZ coating was produced when small size spherical-type or Donut-type particles were used. On the other hand, 8YSZ coating with a porous structure was formed from large-size spherical-type particles. Furthermore, a segmented coating structure with vertical cracks was observed after post heat treatment on the surface of dense structured coating by argon plasma flame at an appropriate gun distance and power condition.

Study on the surface characteristics of parylene-C films in inductively coupled $O_2/CF_4$ gas plasma

  • Ham, Yong-Hyun;Baek, Kyu-Ha;Park, Kun-Sik;Shin, Hong-Sik;Yun, Ho-Jin;Kwon, Kwang-Ho;Do, Lee-Mi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1399-1401
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    • 2009
  • In this article, we reported the results of etching polymonochloro-para-xylylene (parylene-C) thin films using inductively coupled plasma and $CF_4/O_2$ gas mixture. The $CF_4$ gas fraction increased up to the approximately 16 %, the polymer etch rate increased in the range of 277 - 373 nm/min. It confirmed that the etch rate of the parylene-C mainly depended on the O radical density in the plasma. Using a contact angle measurement, the contact angle increased with increasing the $CF_4$ fraction. Moreover, the contact angle was highly related a $CF_x$ functional group on parylene films.

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High Temperature Wear Behavior of Plasma-Sprayed Zirconia-Alumina Composite Coatings (플라즈마 용사된 알루미나-지르코니아 복합체의 고온 마모.마찰 거동)

  • 김장엽;임대순;안효석
    • Tribology and Lubricants
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    • v.12 no.3
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    • pp.33-38
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    • 1996
  • High temperature wear behaviors of plasma-sprayed ZrO$_{2}$-$Y_{2}O_{3}$ composite coatings were investigated for high temperature wear resistance applications. The composite powders containing 20, 50, 80 vol% of alumina for plasma spray were made by spray drying method. Wear tests with composite coated specimens were performed at temperature ranges from room temperature to 800$^{\circ}$C. Wear tests were also carried out with heat treated specimens at room temperature. The microstructural change of coatings and the worn surface were examined by SEM and XRD. Sharp increase of wear loss at high temperature wear test was observed in specimens containing 50 and 80 vol% alumina. Similar trend was observed in the heat treated coatings. The measured residual stress was increased with increased alumina contents and heat treating temperatures. Residual stress induced during heat treatment appeared to be responsible to the observed harmful effect of alumina additions on the high temperature wear.

Dependence of $O_2$ Plasma Treatment of ITO Electrode on Electrical and Optical Properties of Polymer Light Emitting Diodes (ITO 투명전극의 $O_2$ 플라즈마 처리가 고분자 유기발광다이오드의 전기.광학적 특성에 미치는 영향)

  • Gong, Su-Cheol;Back, In-Jea;Yoo, Jea-Huyk;Lim, Hun-Sung;Yang, Sin-Huyk;Shin, Sang-Bea;Shin, Ik-Seup;Chang, Gee-Keun;Chang, Ho-Jung
    • Journal of the Korean institute of surface engineering
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    • v.39 no.3
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    • pp.93-97
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    • 2006
  • Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.

Effects of Post Annealing on the Properties of ZnO:Al Films Deposited by RF-Sputtering (RF-Sputtering 법을 이용한 ZnO:Al 박막의 후 열처리에 따른 특성 변화)

  • Lee, Jae-Hyeong;Lee, Dong-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.9
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    • pp.789-794
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    • 2008
  • Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.

Properties of ZnO:Ga Thin Film Fabricated on Polyimide Substrate by RF Magnetron Sputtering (폴리이미드 기판 위에 RF 마그네트론 스퍼터링 공정으로 증착된 ZnO:Ga 박막의 특성)

  • Park, Seung-Beum;Kim, Jeong-Yeon;Kim, Byeong-Guk;Lim, Jong-Youb;Yeo, In-Hwan;Ahn, Sang-Ki;Kweon, Soon-Yong;Park, Jae-Hwan;Lim, Dong-Gun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.374-378
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    • 2010
  • The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on polyimide substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the polyimide substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 120 sec, the resistivity of GZO films on the polyimide substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

Synthesis of Silicon Carbide Nano-Powder from a Silicon-Organic Precursor by RF Inductive Thermal Plasma (RF 유도 열플라즈마를 이용한 유기 용매로 부터의 탄화규소 나노 분말 합성)

  • Ko, Sang-Min;Koo, Sang-Man;Kim, Jin-Ho;Cho, Woo-Seok;Hwang, Kwang-Taek
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.523-527
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    • 2012
  • Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

The Effects of Plasma Treatments on the Surface Energy of the Polycarbonates and on the Adhesion Strength of the Cu Film/Polycarbonate Interface (플라즈마 표면처리에 의한 폴리카보네이트의 표면에너지 및 구리박막과의 접착력 변화에 관한 연구)

  • Cho Byeong-Hoon;Lee Won-Jong;Park Young-Ho
    • Korean Journal of Materials Research
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    • v.15 no.11
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    • pp.745-750
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    • 2005
  • Polycarbonates are widely used as housing materials of electronic handsets. Since the polycarbonate is electrically insulating, there should be a conducting layer on the polycarbonate for EMI shielding. In this study, we sputter deposited Cu films on the polycarbonate substrates for EMI shielding. Plasma treatments of polycarbonates were used to increase the adhesion strength of the Cu film/polycarbonate interface. The surface energy of the polycarbonate was greatly increased from $30mJ/m^2 \;to\; 65mJ/m^2$ by a 200 W $O_2$ plasma treatment for 10s. It is thought that this is because of the ion bombardment. The adhesion strength of the sputter deposited Cu film to the polycarbonate was quantitatively measured by a 4 point bending tester. A moderate plasma surface treatment of the polycarbonate increased the Cu film/polycarbonate adhesion strength by $30\%$. The EMI shielding efficiency of the sputter deposited $10{\mu}m$ Cu lam on the polycarbonate showed 90dB in the range of 100MHz to 1000MHz.

Frictional behaviour of Oxide Films Produced on S45C Steel by Plasma Nitrocarburizing and Post Plasma Oxidation Treatment (플라즈마 질탄화 & 후산화처리로 S45C강에 형성된 산화막의 마찰거동)

  • Jeong, Kwang-Ho;Lee, In-Sup
    • Korean Journal of Materials Research
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    • v.16 no.12
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    • pp.766-770
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    • 2006
  • The frictional behavior of oxide films on top of the plasma nitrocarburized compound layers was investigated in terms of post-oxidation treatment temperatures. The post-oxidation treatment at both temperatures($400^{\circ}C,\;500^{\circ}C$) produced magnetite($Fe_3O_4$) films which led to a significant enhancement in corrosion resistance. However, this process did not result in any improvement in frictional behavior of the nitrocarburized surface. The wear mechanisms were governed predominantly by the abrasive action of the slider on the surface irrespective of the counterface material(SiC and Bearing steel). When the specimen was sliding against a SiC counterface, the oxide films were destroyed during the early stage of the sliding process and the wear debris of the oxide film at the sliding track had a great influence on the friction coefficient. On the other hand, when sliding against a bearing steel counterface, the slider was mainly worn out due to the much higher hardness of the surface hardened layer. The fluctuation of the friction coefficient of $400^{\circ}C$-oxidized/ nitrocarburized specimen is much severer than that of $500^{\circ}C$ specimen, due to the less amount of wear debris.

Study on the Optimal Release Condition of Wafer Level Molding Process using Plasma Surface Treatment Method (플라즈마 표면처리 방법을 이용한 웨이퍼레벨 몰딩 공정용 기판의 최적 이형조건 도출)

  • Yeon, Simo;Park, Jeonho;Lee, Nukkyu;Park, Sukhee;Lee, Hyejin
    • Journal of Institute of Convergence Technology
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    • v.5 no.1
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    • pp.13-17
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    • 2015
  • In wafer level molding progress, the thermal releasing failure phenomenon is shown up as the important problem. This phenomenon can cause the problem including the warpage, crack of the molded wafer. The thermal releasing failure is due to the insufficiency of adhesion strength degradation of the molding tape. To solve this problem, we studied experimental method increasing the release property of the molding tape through the plasma surface treatment on the wafer substrate. In this research, the vacuum plasma treatment system is used for release property improvement of the molding tape and controls the operating condition of the hydrophilic($O_2$, 100kW, 10min) and hydrophobic($C_2F_6$, 200kW, 10min). In order to perform the peeling test for measuring the releasing force precisely, we remodel the micro scale material property evaluation system developed by Korea institute of industrial technology. In case of hydrophilic surface treatment on the wafer substrate, we can figure out the releasing property of molding tape increase. In order to grasp the effect that it reaches to the release property increase when repeating the hydrophilic treatment, we make an experiment with twice treatment and get the result to increase about 12%. We find out the hydrophilic surface treatment method using plasma can improve releasing property of molding tape in the wafer level molding process.