한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Study on the surface characteristics of parylene-C films in inductively coupled $O_2/CF_4$ gas plasma

  • Ham, Yong-Hyun (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Baek, Kyu-Ha (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Park, Kun-Sik (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Shin, Hong-Sik (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Yun, Ho-Jin (Electronics and Telecommunications Research Institute (ETRI)) ;
  • Kwon, Kwang-Ho (Dept. Control and Instrumentation Engineering, Korea University) ;
  • Do, Lee-Mi (Electronics and Telecommunications Research Institute (ETRI))
  • Published : 2009.10.12
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Abstract

In this article, we reported the results of etching polymonochloro-para-xylylene (parylene-C) thin films using inductively coupled plasma and $CF_4/O_2$ gas mixture. The $CF_4$ gas fraction increased up to the approximately 16 %, the polymer etch rate increased in the range of 277 - 373 nm/min. It confirmed that the etch rate of the parylene-C mainly depended on the O radical density in the plasma. Using a contact angle measurement, the contact angle increased with increasing the $CF_4$ fraction. Moreover, the contact angle was highly related a $CF_x$ functional group on parylene films.

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