Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of ZnO:Ga Thin Film Fabricated on Polyimide Substrate by RF Magnetron Sputtering

폴리이미드 기판 위에 RF 마그네트론 스퍼터링 공정으로 증착된 ZnO:Ga 박막의 특성

  • Park, Seung-Beum (Department of Electronics, Chungju National University) ;
  • Kim, Jeong-Yeon (Department of Electronics, Chungju National University) ;
  • Kim, Byeong-Guk (Department of Electronics, Chungju National University) ;
  • Lim, Jong-Youb (Department of Electronics, Chungju National University) ;
  • Yeo, In-Hwan (Department of Electronics, Chungju National University) ;
  • Ahn, Sang-Ki (Department of Material Science and Engineering, Chungju National University) ;
  • Kweon, Soon-Yong (Department of Material Science and Engineering, Chungju National University) ;
  • Park, Jae-Hwan (Department of Electronics, Chungju National University) ;
  • Lim, Dong-Gun (Department of Electronics, Chungju National University)
  • Published : 2010.05.01
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Abstract

The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on polyimide substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the polyimide substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 120 sec, the resistivity of GZO films on the polyimide substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

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References

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