• Journal of Korean Ophthalmic Optics Society
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• v.15 no.3
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• pp.207-212
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• 2010

Purpose: Rigid gas permeable (RGP) contact lenses, based on fluorosilicone acrylate, were treated with plasma in air. Methods: The chemical compositions were analyzed by using X-ray photoelectron spectroscopy (XPS), the surface morphology and roughness of RGP contact lenses were observed by using atomic force microscopy (AFM), and the wettability changes were estimated by wetting angle measurement. Results: As the contact lenses were treated by the plasma, the F contents decreased significantly, and the O and Si contents increased on the surface. The number of oxygen-containing hydrophilic radicals (C-O and Si-O) increased greatly, the hydrophobic surface decreased, and the wetting angle increased. But the C-O bonds created with exchange of the fluorine did not increase a wettability. The surface compositions were not remarkably changed for the 6 months after plasma treatment, but the wetting angle increased again. Conclusions: It was considered that the improved wettability of the RGP contact lenses of high fluorine content after plasma treatment was affected by the activation of surface, the increase of Si-O, and the decrease of hydrophobic surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.335-338
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• 2010

In this study, the atmospheric plasma treatment with $He/O_2$ was conducted to modify the surface chemistry of carbon fibers. The effects of plasma treatment parameters on the surface energetics of carbon fibers were experimentally investigated with respect to gas flow ratio, power intensity, and treatment time. Surface characteristics of the carbon fibers were determined by X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), Fourier transform infrared (FT-IR), Zeta-potential, and contact angle measurements. The results indicated that oxygen plasma treatment led to a large amount of reactive functional groups onto the fiber surface, and these groups can form together as physical intermolecular bonding to improve the surface wettability with a hydrophilic polymer matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.805-811
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• 2000

Reliability of PBGA(plastic ball grid array) package is weak compared with normal plastic packages. The low reliability is caused by low resistance to the popcorn cracking, which is generated by moisture absorption in PCB(prited circuit board). In this paper, plasma treatment process was used and we analyzed its effects to interface adhesion. The contents of C and Cl decrease after plasma treatment but those of O, Ca, N relatively increase. The plasma treatment improves the adhesion between EMC(epoxy molding compound) and PCB(solder mask). The grade of improvement was over 100% Max, which depends on the properties of EMC. The RMS(root mean square) roughness value of the solder mask surface increases to plasma treatment. There is little difference of adhesion in RF power and treatment time.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.721-723
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• 2005

We applied the Atmospheric Pressure Plasma (AP-plasma) to the MgO film to try to control the Aging-time on the PDP production-line. The MgO film surface and the discharge characteristics of AC-PDPs were investigated, using the plasma-treated MgO film. The Aging-time change can be achieved by treating the MgO film with plasma. This method can be adapted to the mass production-line.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.36-36
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• 1998

• Journal of the Korean institute of surface engineering
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• v.27 no.1
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• pp.12-18
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• 1994

The plasma spray process was used to deposit coatings of $ZrO_2$-8wt%Y2O3 powders on mild steel sub-strate, and the characteristics of as-deposited and heat treated coatings have been investigated. Particulary, the variations of porosity, wear resistance, thermal barrier and thermal shock resistance in $ZrO_2$-8wt% $Y_2O_3$coatings after heat treatment under vacuum circumstance have been investigated. The porosity of the coating layer was increased with increased spray distance. In the case of the arc current of 450A and at the spray distance of 50mm, it was obtained the lowest amount of porosity. After heat treatment, the amount of porosity was found to be decreased, and the wear resistance, microhardness and thermal shock resistance were im-proved. However, the thermal barrier was decreased.

• Korean Journal of Materials Research
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• v.27 no.3
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• pp.155-160
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• 2017

Doped-$LaCrO_3$ perovskites, because of their good electrical conductivity and thermal stability in oxidizing and/or reducing environments, are used in high temperature solid oxide fuel cells as a gas-tight and electrically conductive interconnection layer. In this study, perovskite $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1})O_3$ (LCCC) coatings manufactured by atmospheric plasma spraying followed by heat treatment at $1200^{\circ}C$ have been investigated in terms of microstructural defects, gas tightness and electrical conductivity. The plasma-sprayed LCCC coating formed an inhomogeneous layered structure after the successive deposition of fully-melted liquid droplets and/or partially-melted droplets. Micro-sized defects including unfilled pores, intersplat pores and micro-cracks in the plasma-sprayed LCCC coating were connected together and allowed substantial amounts gas to pass through the coating. Subsequent heat treatment at $1200^{\circ}C$ formed a homogeneous granule microstructure with a small number of isolated pores, providing a substantial improvement in the gas-tightness of the LCCC coating. The electrical conductivity of the LCCC coating was consequently enhanced due to the complete elimination of inter-splat pores and micro-cracks, and reached 53 S/cm at $900^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.27-31
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• 2018

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.